Abstract: The present invention relates to an apparatus for processing an object (O) comprising: an activator (A) for activating a precursor gas (P) to generate a component (C) from the precursor gas; a guide (G) for providing the component locally on the object; a beam unit (BU) for providing a particle (B) beam on the object. Further aspects relate to an according method and computer program.

Abstract: The invention relates to interacting, with a particle beam, with an optical lithography object, comprising: application of a first voltage to the object with respect to a reference potential, in order to influence the particle beam. The invention also relates to a testing of a positionable contact element, comprising: provision of a particle beam with a predetermined particle beam current on an object; determination of a contact quality of the positionable contact element based at least in part on the particle beam current and an electric current which flows through the positionable contact element.

Abstract: A method, a device and a computer program for repairing a defect of a mask for lithography, in particular an EUV mask, are described. A method of repairing a defect of a mask for lithography, in particular an EUV mask, comprises the following steps: (a.) carrying out a first repair step on the defect using a first repair dose, wherein the defect transitions from an initial topology to a first defect topology as a result; (b.) determining an influence of the first repair step on the topology of the defect; (c.) determining a second defect topology for the defect, which is intended to be achieved by way of a second repair step on the defect; and (d.) determining a second repair dose for the second repair step, at least in part on the basis of the determined influence of the first repair step on the topology of the defect and the second defect topology. The method may further comprise step (e.) of carrying out the second repair step using the second repair dose.

Abstract: The present application relates to a method and a device for correcting at least one image error when scanning a charged particle beam of a scanning particle microscope over a sample, the method comprising the steps of: (a) dividing a scanned region of the charged particle beam into at least two partial regions, with each of the at least two partial regions containing at least one structure element; (b) determining a correction value for the at least one structure element with regards to a target position of the at least one structure element for each of the at least two partial regions; and (c) correcting a beam deflection of the charged particle beam for at least one of the at least two partial regions using the determined correction value.

Abstract: A method for examining a blank of a microlithographic photomask, including the steps of: a) arranging the blank on a first stage of a first examination apparatus such that a first and a second edge of the blank rest against stops of the first stage, b) ascertaining an examination location on the blank in a first coordinate system with the aid of the first examination apparatus, c) arranging the blank on a second stage of a second examination apparatus having an image recording unit, d) recording at least one image of the blank using the image recording unit such that the first and second edge are captured at least in part, and e) ascertaining a transformation rule on the basis of the first and second edge captured in the at least one image, in order to transform the examination location captured in the first coordinate system into a second coordinate system (142) of the second examination apparatus.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: A method for processing a defect of a microlithographic photomask is disclosed, wherein a process gas is activated with the aid of a particle beam, wherein a control unit is provided for controlling a deflection unit with a control bandwidth, wherein the deflection unit for deflecting the particle beam is configured to guide the particle beam over the photomask, including the following steps: a) providing an image of at least a portion of the photomask, b) ascertaining a repair shape (in the image on the basis of the control bandwidth, wherein the repair shape comprises the defect, and c) providing the particle beam at m pixels of the repair shape with the aid of the deflection unit, and activating the process gas for the purpose of processing the defect.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: A device for examining and/or processing an element for photolithography with a beam of charged particles, the device including (a) means for acquiring measurement data while the element for photolithography is exposed to the beam of charged particles; and (b) means for predetermining a drift of the beam of charged particles relative to the element for photolithography with a trained machine learning model and/or a predictive filter. The trained machine learning model and/or the predictive filter use(s) at least the measurement data as input data.

Abstract: The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods. A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region. A further method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.

Abstract: The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam includes: (a.) producing a first group of correction marks; and (b.) producing a second group of correction marks; (c.) wherein the separations of the correction marks within the first and within the second group are smaller than the separations between correction marks from the first group and correction marks from the second group.

Abstract: The present invention refers to a method for determining at least one optical property of at least one deposition material used for a lithographic mask which comprises the steps: (a) determining a height value of the at least one deposition material deposited on a substrate for each of at least three different deposition heights of the deposition material, wherein the at least three different deposition heights are in a nanoscale range; (b) determining a reflectivity value of the at least one deposition material for each of the at least three different deposition heights, wherein determining the reflectivity values comprises using photons generated by an optical inspection system; and (c) determining the at least one optical property of the at least one deposition material by adapting simulated reflectivity data to the measured reflectivity values for each of the at least three different deposition heights.

Abstract: The present application relates to a method for characterizing a shielding element of a particle beam device for shielding an electric field between a sample position and a particle beam source. The method comprises positioning a means for characterizing the shielding element on a side of the shielding element which is facing the sample position.

Abstract: A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of: a) providing an image of at least a portion of the photomask, b) determining a geometric shape of a defect in the image as a repair shape, with the repair shape comprising a number n of pixels, c) subdividing, in computer-implemented fashion, the repair shape into a number k of sub-repair shapes, with an i-th of the k sub-repair shapes having a number mi of pixels, which are a subset of the n pixels of the repair shape, d) providing an activating particle beam and a process gas at each of the mi pixels of a first of the sub-repair shapes for the purposes of processing the first of the sub-repair shapes, e) repeating step d) for the first of the sub-repair shapes over a number j of repetition cycles, and f) repeating steps d) and e) for each further sub-repair shape.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Abstract: An apparatus for analyzing and/or processing a sample with a particle beam, comprising: a sample stage for holding the sample; a providing unit for providing the particle beam comprising: an opening for guiding the particle beam to a processing position on the sample; and a shielding element for shielding an electric field generated by charges accumulated on the sample; wherein the shielding element covers the opening, is embodied in sheetlike fashion and comprises an electrically conductive material; wherein the shielding element comprises a convex section, this section being convex in relation to the sample stage; and wherein the convex section has a through opening for the particle beam to pass through to the sample.

Abstract: The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

Abstract: A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of: a1) providing an image of at least a portion of the photomask, b1) determining a geometric shape of a defect in the image as a repair shape, c1) subdividing the repair shape into a number of n pixels in accordance with a first rasterization, d1) subdividing the repair shape into a number of m pixels in accordance with a second rasterization, the second rasterization emerging from a subpixel displacement of the first rasterization, e1) providing an activating particle beam and a process gas at each of the n pixels of the repair shape in accordance with the first rasterization, and f1) providing the activating particle beam and the process gas at each of the m pixels of the repair shape in accordance with the second rasterization.

Abstract: The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.