Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process.

Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of treating a substrate includes placing a substrate onto one of a plurality of substrate holders of a movable substrate carrier within a non-vacuum enclosure of a substrate treatment apparatus; heating the interior of the non-vacuum enclosure; supplying a gas into the non-vacuum enclosure to react with a surface of the substrate; and exhausting the gas from the non-vacuum enclosure through a vent in the non-vacuum enclosure.

Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of treating a substrate includes placing a substrate onto one of a plurality of substrate holders of a movable substrate carrier within a non-vacuum enclosure of a substrate treatment apparatus; heating the interior of the non-vacuum enclosure; supplying a gas into the non-vacuum enclosure to react with a surface of the substrate; and exhausting the gas from the non-vacuum enclosure through a vent in the non-vacuum enclosure.

Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a non-vacuum enclosure; at least one opening in the non-vacuum enclosure to insert a substrate into or remove a substrate from the non-vacuum enclosure; a movable substrate carrier, including a plurality of substrate holders, disposed within the non-vacuum enclosure to linearly move substrates disposed on the plurality of substrate holders; a heater to heat an interior of the non-vacuum enclosure; a gas supply to supply a gas to the interior of the non-vacuum enclosure; and a vent to exhaust the gas from the interior of the non-vacuum enclosure.

Abstract: Embodiments of valves having adjustable hard stops and methods of use thereof are provided herein. The adjustable valve includes a valve body including an inlet and an outlet; a valve member that is moveable between a fully closed position and a fully open position to selectively allow or prevent flow from the inlet to the outlet; and an adjustable hard stop to limit the fully open position of the valve to an adjusted fully open position.

Abstract: A method and apparatus for forming battery active material on a substrate are disclosed. In one embodiment, an apparatus for depositing a battery active material on a surface of a substrate includes a substrate conveyor system for transporting the substrate within the apparatus, a material spray assembly disposed above the substrate conveyor system, and a first heating element disposed adjacent to the material spray assembly above the substrate conveyor system configured to heat the substrate. The material spray assembly has a 2-D array of nozzles configured to electrospray an electrode forming solution on the surface of the substrate.

Abstract: A method and apparatus for forming battery active material on a substrate are disclosed. In one embodiment, an apparatus for depositing a battery active material on a surface of a substrate includes a substrate conveyor system for transporting the substrate within the apparatus, a material spray assembly disposed above the substrate conveyor system, and a first heating element disposed adjacent to the material spray assembly above the substrate conveyor system configured to heat the substrate. The material spray assembly has a 2-D array of nozzles configured to electrospray an electrode forming solution on the surface of the substrate.

Abstract: Embodiments of valves having adjustable hard stops and methods of use thereof are provided herein. The adjustable valve includes a valve body including an inlet and an outlet; a valve member that is moveable between a fully closed position and a fully open position to selectively allow or prevent flow from the inlet to the outlet; and an adjustable hard stop to limit the fully open position of the valve to an adjusted fully open position.

Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a non-vacuum enclosure; at least one opening in the non-vacuum enclosure to insert a substrate into or remove a substrate from the non-vacuum enclosure; a movable substrate carrier, including a plurality of substrate holders, disposed within the non-vacuum enclosure to linearly move substrates disposed on the plurality of substrate holders; a heater to heat an interior of the non-vacuum enclosure; a gas supply to supply a gas to the interior of the non-vacuum enclosure; and a vent to exhaust the gas from the interior of the non-vacuum enclosure.

Abstract: A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: A spray module for depositing an electro-active material over a flexible conductive substrate is provided. The spray module comprises a first heated roller for heating and transferring the flexible conductive substrate, a second heated roller for heating and transferring the flexible conductive substrate, a first spray dispenser positioned adjacent to the first heated roller for depositing electro-active material onto the flexible conductive substrate as the flexible conductive substrate is heated by the first heated roller, and a second spray dispenser positioned adjacent to the second heated roller for depositing electro-active material over the flexible conductive substrate as the flexible conductive substrate is heated by the second heated roller.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: In one embodiment, an apparatus for simultaneously depositing an anodically or cathodically active material on opposing sides of a flexible conductive substrate is provided. The apparatus comprises a chamber body defining one or more processing regions in which a flexible conductive substrate is exposed to a dual sided spray deposition process, wherein each of the one or more processing regions are further divided into a first spray deposition region and a second spray deposition region for simultaneously spraying an anodically active or cathodically active material onto opposing sides of a portion of the flexible conductive substrate, wherein each of the first and second spray deposition regions comprise a spray dispenser cartridge for delivering the activated material toward the flexible conductive substrate and a movable collection shutter.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate.