Patents by Inventor Michael C Langston

Michael C Langston has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Irradiation assisted nucleation of quantum confinements by atomic layer deposition
    Patent number: 8883266
    Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: November 11, 2014
    Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Patents & Technologies North America, LLC
    Inventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
  • Irradiation assisted nucleation of quantum confinements by atomic layer deposition
    Patent number: 8551868
    Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: October 8, 2013
    Assignees: The Board of Trustees of the Leland Stanford Junior Universit, Honda Patents & Technologies North America, LLC
    Inventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
  • Irradiation assisted nucleation of quantum confinements by atomic layer deposition
    Publication number: 20110269298
    Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
    Type: Application
    Filed: March 24, 2011
    Publication date: November 3, 2011
    Inventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao