Abstract: A technique for disrupting the operation of a target containing nonlinear electronic devices generally includes generating a high frequency signal; generating a low frequency signal; modulating the high frequency signal with the low frequency signal; and emitting the modulated high frequency signal at the target.

Abstract: A radio frequency source includes a coaxial non-linear transmission line. The coaxial non-linear transmission line may include a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; and a plurality of stages enclosed by the outer conductor. Each stage may then includes an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite switch elements, each defining a respective bore through which the inner conductor runs; and a plurality of inner and outer cups coaxially aligned with the inner and outer conductors, each defining a respective bore through which the inner conductor runs.

Abstract: The present invention is, in one aspect, a radio frequency source, comprising a gyromagnetic precession oscillator. In a second aspect, the gyromagnetic precession oscillator comprises a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite precessors, each defining a respective bore through which the inner conductor runs; a plurality of dividers disposed within and defining a resonant chamber in the cavity; and a dielectric material filling the cavity. In a third aspect, the radio frequency source is actively tunable. In a fourth aspect, the radio frequency source that is tunable pulse-to-pulse.

Abstract: A radio frequency source includes a coaxial non-linear transmission line. The coaxial non-linear transmission line may include a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; and a plurality of stages enclosed by the outer conductor. Each stage may then includes an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite switch elements, each defining a respective bore through which the inner conductor runs; and a plurality of inner and outer cups coaxially aligned with the inner and outer conductors, each defining a respective bore through which the inner conductor runs.

Abstract: The present invention is, in one aspect, a radio frequency source, comprising a gyromagnetic precession oscillator. In a second aspect, the gyromagnetic precession oscillator comprises a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite precessors, each defining a respective bore through which the inner conductor runs; a plurality of dividers disposed within and defining a resonant chamber in the cavity; and a dielectric material filling the cavity. In a third aspect, the radio frequency source is actively tunable. In a fourth aspect, the radio frequency source that is tunable pulse-to-pulse.

Abstract: A technique for disrupting the operation of a target containing nonlinear electronic devices generally includes generating a high frequency signal; generating a low frequency signal; modulating the high frequency signal with the low frequency signal; and emitting the modulated high frequency signal at the target.

Abstract: A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.

Abstract: A Ti/TiN adhesion/barrier layer is formed on a substrate and annealed. The anneal step is performed at a temperature within a good morphology range of 100° C. above a base barrier anneal temperature that depends on the thickness of said barrier layer. The base barrier anneal temperature is about 700° C. for a barrier thickness of about 1000 Å and about 800° C. for a barrier thickness of about 3000 Å. The barrier layer is 800 Å thick or thicker. A first electrode is formed, followed by a BST dielectric layer and a second electrode. A bottom electrode structure in which a barrier layer of TiN is sandwiched between two layers of platinum is also disclosed. The process and structures also produce good results with other capacitor dielectrics, including ferroelectrics such as strontium bismuth tantalate.

Abstract: Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 Å. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 675° C. and 850° C.

Abstract: A silicon nitride barrier layer is deposited on a gallium arsenide substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the barrier layer. A first electrode is formed on the stress reduction layer, then a liquid precursor is spun on the first electrode, dried at about 400° C., and annealed at between 600° C. and 850° C. to form a BST capacitor dielectric. A second electrode is deposited on the dielectric and annealed.

Abstract: Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 Å. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 675° C. and 850° C.

Abstract: A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.

Abstract: A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.

Abstract: An integrated curcuit includes a layered superlattice material having the .sub.formula A1w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.

Abstract: A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Special polyoxyalkylated precursor solutions are designed to optimize polarizability of the corresponding metal oxide materials by adding dopants including stoichiometric excess amounts of bismuth and tantalum. The RTP baking process is especially beneficial in optimizing the polarizability of the resultant metal oxide.

Abstract: A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.

Abstract: A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug.

Abstract: A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared comprising a stock solution of BST of greater than 99.999% purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0.01-100 mol %, and such that the titanium is in the range of 0.01-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode, dried at 400.degree. C. for 2 to 10 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes.

Abstract: A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.

Abstract: A new method (P200) is provided for making magnesium oxide layers (122) in plasma displays (100). A magnesium carboxylate liquid precursor solution is applied to a display panel (102), dried, and annealed to yield a solid magnesium oxide layer (122) having excellent electro-optical performance.