Abstract: Systems and methods are provided to control operational parameter(s) of a spin-on process based on a localized fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. In the present disclosure, a tracer is introduced within, or incorporated onto a surface of, a processing liquid as the processing liquid is dispensed onto the spinning semiconductor substrate. Movement of the tracer is tracked over time, as the tracer flows along with the processing liquid across the spinning substrate surface, to determine a localized fluid velocity of the processing liquid at one or more radial positions on the substrate surface. The localized fluid velocity is then used to control one or more operational parameters of a spin-on process.

Abstract: Embodiments of processing systems and methods are provided to control operational parameter(s) of a spin-on process based on a fluid height and/or a fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. The disclosed embodiments determine the fluid height and/or the fluid velocity of the processing liquid by: (a) monitoring an intensity of light, which is transmitted through the processing liquid as the processing liquid flows across the surface of the spinning substrate or leaves the periphery of the spinning substrate, or (b) monitoring how long it takes for the processing liquid to flow from a dispensed location to the periphery of the spinning substrate. Once determined, the fluid velocity is used to control one or more operational parameters of a spin-on process.

Abstract: An optical apparatus includes a waveguide structure, a grating pattern positioned on a surface of the waveguide structure and including a plurality of protrusion structures, and a respective insert structure positioned in each of the protrusion structures and on the surface of the waveguide structure, which results in a plurality of insert structures. The protrusion structures have a higher refractive index (RI) than the waveguide structure. The insert structures are reflective to an incident light beam. The protrusion structures and the insert structures are configured to redirect the incident light beam into the waveguide structure.

Abstract: A method is provided for an etching process. The method includes dispensing a liquid electrolyte layer over a layer-to-be-etched on a substrate. A first electrode is coupled to the substrate, and a second electrode is coupled to the liquid electrolyte layer. An alternating voltage is applied at different frequencies between these electrodes. Impedance data is collected in response to the alternating voltage. The etching process is then performed with an etching parameter selected based on the collected impedance data, allowing for precise control and improved uniformity of the layer-to-be-etched.

Abstract: An apparatus for dispensing a liquid onto a substrate may comprise a reservoir for storing the liquid to be dispensed; a filter comprising an inlet and an outlet, the filter inlet in fluidic communication with the reservoir via a first valve; a dosing pump comprising an inlet, a first outlet, and a second outlet, the dosing pump inlet in fluidic communication with the reservoir and the dosing pump second outlet in fluidic communication with the filter inlet via a second valve, the dosing pump configured to dose an amount of the liquid and pump the liquid; and a dispense nozzle in fluidic communication with the dosing pump first outlet, the dispense nozzle configured to dispense the liquid onto the substrate.

Abstract: An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

Abstract: A method includes receiving a first notification that a process chamber of a baking apparatus entered an idle state, determining that a low-flow-rate (LFR) mode can be started, and providing an incoming gas to the process chamber. The incoming gas includes a first portion of a supply gas. The method further includes setting a flow rate of the incoming gas to an idle incoming flow rate, receiving a second notification that the process chamber entered an active state, determining that a high-flow-rate (HFR) mode can be started, and setting the flow rate of the incoming gas to a process incoming flow rate. The process incoming flow rate is greater than the idle incoming flow rate.

Abstract: An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

Abstract: A method of processing a substrate includes loading and processing the substrate in a process chamber, and obtaining first gas sensor data generated by interaction of a first target gas with a first gas sensor fluidly coupled to a headspace of the process chamber. The method includes determining a first metric for the processing based on the first gas sensor data, the determining including comparing the first gas sensor data with a first gas calibration data set. The method includes terminating the processing of the substrate based on the first metric for the processing.

Abstract: Systems and methods are provided to control operational parameter(s) of a spin-on process based on a localized fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. In the present disclosure, a tracer is introduced within, or incorporated onto a surface of, a processing liquid as the processing liquid is dispensed onto the spinning semiconductor substrate. Movement of the tracer is tracked over time, as the tracer flows along with the processing liquid across the spinning substrate surface, to determine a localized fluid velocity of the processing liquid at one or more radial positions on the substrate surface. The localized fluid velocity is then used to control one or more operational parameters of a spin-on process.

Abstract: A bath processing tool includes a bath chamber for wet processing wafers in a bath solution, the bath chamber having wafer loading arms extending along a first direction. The tool includes a light sensor to capture light from a bath solution in the bath chamber and a plurality of light sources disposed within a plurality of gas injectors. The plurality of light sources is configured to project light of different wavelengths from each of the plurality of gas injectors towards the wafers. The plurality of light sources includes a first light source emitting light at a first wavelength towards a first zone and a second light source emitting light at a second wavelength towards a second zone, where the second wavelength is different from the first wavelength, and the first zone and second zone are different volume of the bath solution along the first direction.

Abstract: A method of processing a substrate includes forming a photoresist layer over the substrate, exposing the substrate to a pattern of an actinic radiation, where the exposing causes a photo-reaction in an exposed portion of the photoresist layer. The method includes treating the photoresist layer with a binding agent, where the binding agent is selectively adsorbed on a first portion of the photoresist layer, and performing a development process to remove a second portion of the photoresist, the first portion remaining after the development process.

Abstract: Various embodiments of improved systems and methods are provided herein to monitor process chemicals used in a semiconductor process. More specifically, new semiconductor processing systems and methods that utilize infrared (IR) spectroscopy techniques are provided herein to monitor the composition and/or concentration of process chemicals utilized to process a substrate and/or the by-products produced during substrate processing. By monitoring the process chemicals and/or the by-products in real-time, the systems and methods described herein can be used to provide better process control and/or end-point detection for a wide variety of semiconductor processes.

Abstract: Aspects of the present disclosure provide a method for fabricating a grating coupler. For example, the method can include providing a substrate, forming a plurality of grating elements and a photosensitive material above the substrate, and projecting actinic radiation of varied intensities to expose different regions of the photosensitive material, causing the photosensitive material to generate a solubility-changing agent. The method can also include removing the solubility-changing agent. The actinic radiation of varied intensities can correspond to depths of grooves between the grating elements.

Abstract: A method for fabricating a semiconductor device with organometallic based photoresists and commercial extreme ultraviolet photolithography. The method for fabricating a semiconductor device includes applying organometallic based photoresist to a substrate and exposing the organometallic based photoresist to extreme ultraviolet photolithography. The method may include introducing an additive to the organometallic based photoresist to promote at least one of adhesion, passivation, reactivity and cross-linking of components in the organometallic based photoresist. The method may also include exposing the organometallic based photoresist to microwave radiation. The microwave radiation may couple with molecular motions, such as internal rotations, to enhance organometallic based photoresist cluster mobility or reorientations. In addition, microwave radiation may induce charge polarization and eddy currents in materials, resulting in induced electron transport and heating due to resistive losses.

Abstract: A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

Abstract: Systems and methods are provided to control operational parameter(s) of a spin-on process based on a localized fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. In the present disclosure, a tracer is introduced within, or incorporated onto a surface of, a processing liquid as the processing liquid is dispensed onto the spinning semiconductor substrate. Movement of the tracer is tracked over time, as the tracer flows along with the processing liquid across the spinning substrate surface, to determine a localized fluid velocity of the processing liquid at one or more radial positions on the substrate surface. The localized fluid velocity is then used to control one or more operational parameters of a spin-on process.

Abstract: Systems and methods are provided to control operational parameter(s) of a spin-on process based on a localized fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. In the present disclosure, a perturbation is introduced within a processing liquid dispensed onto the spinning semiconductor substrate. Movement of the perturbation is tracked over time, as the perturbation flows along with the processing liquid across the spinning substrate surface, to determine a localized fluid velocity of the processing liquid at one or more radial positions on the substrate surface. The localized fluid velocity is then used to control one or more operational parameters of a spin-on process.

Abstract: Embodiments of processing systems and methods are provided to control operational parameter(s) of a spin-on process based on a fluid height and/or a fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. The disclosed embodiments determine the fluid height and/or the fluid velocity of the processing liquid by: (a) monitoring an intensity of light, which is transmitted through the processing liquid as the processing liquid flows across the surface of the spinning substrate or leaves the periphery of the spinning substrate, or (b) monitoring how long it takes for the processing liquid to flow from a dispensed location to the periphery of the spinning substrate. Once determined, the fluid velocity is used to control one or more operational parameters of a spin-on process.

Abstract: Various embodiments of systems and methods for monitoring thermal characteristics of substrates, substrate processes and/or substrate processing module components are disclosed herein. More specifically, the present disclosure provides various embodiments of a thermal imaging sensor within various substrate processing modules (e.g., a liquid dispense module, a baking module or combined bake module, an interface block, a wafer inspection system (WIS) module, a plating dispense module or another processing module) of a substrate processing system. By positioning the thermal imaging sensor at various locations within the substrate processing system, the present disclosure enables thermal data to be remotely collected from the substrate surface, a liquid dispensed onto the substrate surface, a processing space surrounding the substrate, or a component included within a substrate processing module (e.g.