Abstract: A chemical vapor deposition system (CVD) adapted to capture a temperature of a silicon carbide layer grown on a wafer includes a reaction chamber adapted to grow a silicon carbide layer epitaxially on wafers present within the chamber, a wafer carrier having a platform for carrying at least one wafer, a light source that emits radiation of a prescribed wavelength toward the wafer carrier, a first pyrometer coupled to the reaction chamber and configured to receive radiation emitted or reflected from the wafer and to measure radiation intensity of the prescribed wavelength, a reflectometer coupled to the pyrometer configured to receive and measure radiation of the prescribed wavelength reflected from the wafer in response to the radiation emitted by the light source, and an electronic controller configured to determine a temperature of the silicon carbide layer grown on the wafer using measurements of the first pyrometer and reflectometer.

Abstract: A wafer carrier includes a base including a generally planar bottom surface and a top surface that includes a plurality of platforms extending above the top surface. The wafer carrier includes a thermal cover defining a plurality of pockets. The thermal cover is configured to be coupled to the base by at least one fastener and the plurality of pockets are arranged such that each pocket of the plurality of pockets is aligned with a corresponding platform of the plurality of the platforms when the thermal cover is supported by a plurality of first pedestals that extend from the top surface of the base. A plurality of second pedestals are located along the plurality of platforms for supporting the one or more wafers, wherein each platform includes at least one second pedestal that extends from a top surface of the platform for supporting one wafer.

Abstract: Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. Such measurements can be made using white light reflectometry through a viewport in the reactor housing.