Patents by Inventor Michael Charles Brading
Michael Charles Brading has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11546514Abstract: This disclosure provides methods, devices, and systems for controlling motion-activated cameras. The present implementations more specifically relate to reducing false triggers in motion-activated camera systems. In some implementations, a motion-activated camera system may include a camera, a first motion sensor having a wide field-of-view (FOV), and a second motion sensor having a narrow FOV. In some aspects, the motion-activated camera system may be configured to operate in a wide-FOV mode or a narrow-FOV mode. In some implementations, the first motion sensor may trigger the camera to capture images of a scene responsive to motion detected in the wide FOV when the system is configured to operate in the wide-FOV mode. In some other implementations, the second motion sensor may trigger the camera to capture images of the scene responsive to motion detected in the narrow FOV when the system is configured to operate in the narrow-FOV mode.Type: GrantFiled: October 6, 2021Date of Patent: January 3, 2023Assignee: Synaptics IncorporatedInventor: Michael Charles Brading
-
Publication number: 20210258498Abstract: A depth sensing system including an electronic display, a light source, an array of optical sensing elements, and a depth map generator. The light source is configured to transmit periodic bursts of light in a field of view (FOV) of the depth sensing system. The array of optical sensing elements is disposed behind the electronic display and configured to detect light reflected from one or more objects in the FOV of the depth sensing system, where the reflected light is partially occluded by the electronic display. The depth map generator is configured to receive sensor data based on the detected light form the array of optical sensing elements and determine depth information about the one or more objects by applying one or more neural network models to the received sensor data.Type: ApplicationFiled: February 17, 2021Publication date: August 19, 2021Inventors: Robert John GOVE, Michael Charles BRADING
-
Patent number: 10506147Abstract: In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.Type: GrantFiled: June 13, 2016Date of Patent: December 10, 2019Assignee: InVisage Technologies, Inc.Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Patent number: 9972652Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: November 7, 2016Date of Patent: May 15, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20170069679Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: ApplicationFiled: November 7, 2016Publication date: March 9, 2017Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Patent number: 9491388Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: December 22, 2014Date of Patent: November 8, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20160301841Abstract: In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.Type: ApplicationFiled: June 13, 2016Publication date: October 13, 2016Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Patent number: 9369621Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.Type: GrantFiled: May 3, 2011Date of Patent: June 14, 2016Assignee: InVisage Technologies, Inc.Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Publication number: 20150208011Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: ApplicationFiled: December 22, 2014Publication date: July 23, 2015Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Patent number: 8916947Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: June 8, 2011Date of Patent: December 23, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20130250150Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array may include at least four megapixels and the second image sensor array may include one-half or less than the number of pixels in the first image sensor array.Type: ApplicationFiled: May 14, 2013Publication date: September 26, 2013Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Publication number: 20110309462Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: ApplicationFiled: June 8, 2011Publication date: December 22, 2011Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20110267510Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.Type: ApplicationFiled: May 3, 2011Publication date: November 3, 2011Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Publication number: 20100187404Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: March 19, 2010Publication date: July 29, 2010Inventors: Ethan Jacob Dukenfield Klem, Dean Delehanty Macneil, Gerasimos Konstantatos, Jiang Tang, Michael Charles Brading, Hui Tian, Edward Hartley Sargent
-
Publication number: 20100187408Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: March 19, 2010Publication date: July 29, 2010Inventors: Ethan Jacob Dukenfield Klem, Dean Delehanty Macneil, Gerasimos Konstantatos, Jiang Tang, Michael Charles Brading, Hui Tian, Edward Hartley Sargent
-
Publication number: 20090152664Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: April 18, 2008Publication date: June 18, 2009Inventors: Ethan Jacob Dukenfield Klem, Dean Delehanty MacNeil, Gerasimos Konstantatos, Jiang Tang, Michael Charles Brading, Hui Tian, Edward Hartley Sargent