Patents by Inventor MICHAEL CHEMAMA

MICHAEL CHEMAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11953316
    Abstract: There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: April 9, 2024
    Assignee: Applied Materials Israel Ltd.
    Inventors: Rafael Bistritzer, Anna Levant, Moshe Eliasof, Michael Chemama, Konstantin Chirko
  • Patent number: 11921063
    Abstract: There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.
    Type: Grant
    Filed: July 21, 2021
    Date of Patent: March 5, 2024
    Assignee: Applied Materials Israel Ltd.
    Inventors: Michael Chemama, Ron Meiry, Moshe Eliasof, Lior Yaron, Guy Eytan, Konstantin Chirko, Rafael Bistritzer
  • Publication number: 20230023363
    Abstract: There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.
    Type: Application
    Filed: July 21, 2021
    Publication date: January 26, 2023
    Inventors: Michael CHEMAMA, Ron MEIRY, Moshe ELIASOF, Lior YARON, Guy EYTAN, Konstantin CHIRKO, Rafael BISTRITZER
  • Publication number: 20220390858
    Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.
    Type: Application
    Filed: June 21, 2022
    Publication date: December 8, 2022
    Inventors: GILAD BARAK, MICHAEL CHEMAMA, SMADAR FERBER, YANIR HAINICK, BORIS LEVANT, ZE'EV LINDENFELD, DROR SHAFIR, YURI SHIRMAN, ELAD SCHLEIFER
  • Patent number: 11366398
    Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: June 21, 2022
    Assignee: NOVA LTD
    Inventors: Gilad Barak, Michael Chemama, Smadar Ferber, Yanir Hainick, Boris Levant, Ze'Ev Lindenfeld, Dror Shafir, Yuri Shirman, Elad Schleifer
  • Publication number: 20220082376
    Abstract: There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 17, 2022
    Inventors: Rafael BISTRITZER, Anna LEVANT, Moshe ELIASOF, Michael CHEMAMA, Konstantin CHIRKO
  • Publication number: 20210247699
    Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.
    Type: Application
    Filed: July 18, 2019
    Publication date: August 12, 2021
    Inventors: GILAD BARAK, MICHAEL CHEMAMA, SMADAR FERBER, YAIR HAINICK, BORIS LEVANT, ZE'EV LINDENFELD, DROR SHAFIR, YURI SHIRMAN, ELAD SCHLEIFER