Patents by Inventor Michael Chiu Kwan
Michael Chiu Kwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120009803Abstract: A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone.Type: ApplicationFiled: August 17, 2011Publication date: January 12, 2012Applicant: Applied Materials, Inc.Inventors: Kee Bum Jung, Dale R. Du Bois, Lun Tsuei, Lihua Li Huang, Martin Jay Seamons, Soovo Sen, Reza Arghavani, Michael Chiu Kwan
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Patent number: 7638440Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.Type: GrantFiled: March 12, 2004Date of Patent: December 29, 2009Assignee: Applied Materials, Inc.Inventors: Yuxiang May Wang, Sudha S. R. Rathi, Michael Chiu Kwan, Hichem M'Saad
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Patent number: 7407893Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.Type: GrantFiled: February 24, 2005Date of Patent: August 5, 2008Assignee: Applied Materials, Inc.Inventors: Martin Jay Seamons, Wendy H. Yeh, Sudha S. R. Rathi, Deenesh Padhi, Andy (Hsin Chiao) Luan, Sum-Yee Betty Tang, Priya Kulkarni, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad, Yuxiang May Wang, Michael Chiu Kwan
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Patent number: 7253123Abstract: A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, oxygen doped silicon carbide, nitrogen doped silicon carbide, carbon doped silicon nitride, nitrogen doped silicon oxycarbide, or combinations thereof. The deposition is performed in a plasma enhanced chemical vapor deposition chamber and the deposition temperature is less than 450° C. The sidewall spacers so produced provide good capacity resistance, as well as excellent structural stability and hermeticity.Type: GrantFiled: January 10, 2005Date of Patent: August 7, 2007Assignee: Applied Materials, Inc.Inventors: Reza Arghavani, Michael Chiu Kwan, Li-Qun Xia, Kang Sub Yim
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Patent number: 7064077Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: GrantFiled: October 1, 2004Date of Patent: June 20, 2006Assignee: Applied MaterialsInventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Patent number: 6812153Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: GrantFiled: April 30, 2002Date of Patent: November 2, 2004Assignee: Applied Materials Inc.Inventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Patent number: 6715496Abstract: A method and apparatus for cleaning a semiconductor wafer processing system comprising a turbomolecular pump. In one embodiment, the invention may be reduced to practice by first supplying a cleaning agent to a chamber; pumping the cleaning agent from the chamber through an the exhaust port; at least partially opening a gate valve; and drawing at least a portion of the cleaning agent through the gate valve and into the turbomolecular pump.Type: GrantFiled: April 3, 2003Date of Patent: April 6, 2004Assignee: Applied Materials Inc.Inventors: Michael Chiu Kwan, Alan W. Collins, Jalel Hamila, Padmanabhan Krishnaraj, Zhengquan Tan
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Publication number: 20030203637Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: ApplicationFiled: April 30, 2002Publication date: October 30, 2003Applicant: Applied Materials, Inc.Inventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Publication number: 20030164224Abstract: A method and apparatus for cleaning a semiconductor wafer processing system comprising a turbomolecular pump. In one embodiment, the invention may be reduced to practice by first supplying a cleaning agent to a chamber; pumping the cleaning agent from the chamber through an the exhaust port; at least partially opening a gate valve; and drawing at least a portion of the cleaning agent through the gate valve and into the turbomolecular pump.Type: ApplicationFiled: April 3, 2003Publication date: September 4, 2003Inventors: Michael Chiu Kwan, Alan W. Collins, Jalel Hamila, Padmanabhan Krishnaraj, Zhengquan Tan
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Patent number: 6596123Abstract: A method and apparatus for cleaning a semiconductor wafer processing system comprising a turbomolecular pump. In one embodiment, the invention may be reduced to practice by first supplying a cleaning agent to a chamber; pumping the cleaning agent from the chamber through an the exhaust port; at least partially opening a gate valve; and drawing at least a portion of the cleaning agent through the gate valve and into the turbomolecular pump.Type: GrantFiled: January 28, 2000Date of Patent: July 22, 2003Assignee: Applied Materials, Inc.Inventors: Michael Chiu Kwan, Alan W. Collins, Jalel Hamila, Padmanabhan Krishnaraj, Zhengquan Tan