Abstract: An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500° C., respectively.

Abstract: Techniques are described that can be used to store macroblocks to memory and retrieve macroblocks from memory. In some cases, macroblocks can be stored in memory in memory addressable locations with column and row addresses flipped. Because macroblocks are stored in columns but retrieved across rows, portions of multiple macroblocks can be retrieved in a single read burst. The portions can be Golomb decoded and stored so that macroblocks can be re-assembled from the portions. In some cases, macroblocks of encoded video can be stored in continuous memory addressable locations.

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Abstract: The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.

Abstract: A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers.

Abstract: Methods and systems to improve the efficiency of video processing. Compression/decompression efficiency for a current frame may be enhanced by using an appropriate coding parameter. To choose an appropriate coding parameter, a histogram of the previous frame's symbols may be created. The histogram may be used to predict the number of bits the current frame will contain after lossless compression, given a specific coding parameter. Iterating through all of the possible coding parameters on the previous frame histogram may yield a well-suited coding parameter with which the current frame can be compressed. This results in high compression efficiency by using the previous frame as the predictor.

Abstract: Techniques are described that can be used to store macroblocks to memory and retrieve macroblocks from memory. In some cases, macroblocks can be stored in memory in memory addressable locations with column and row addresses flipped. Because macroblocks are stored in columns but retrieved across rows, portions of multiple macroblocks can be retrieved in a single read burst. The portions can be Golomb decoded and stored so that macroblocks can be re-assembled from the portions. In some cases, macroblocks of encoded video can be stored in continuous memory addressable locations.

Abstract: A preformed flexibly resilient housing for retaining an airbag cushion and securing the airbag module to a vehicle structure. The preformed flexibly resilient housing has a persistent preformed shape and is flexible when subjected to stress. Features are added to the rim of the preformed flexibly resilient housing for interfacing with either a collar or the vehicle structure. The preformed flexibly resilient housing may be secured directly to the vehicle structure, or it may be secured using an intermediary such as a rigid collar. The preformed flexibly resilient housing may additionally have features for securing the preformed flexibly resilient housing to an inflation source.

Abstract: A common database is used to store data relating to both three-dimensional graphics models and logistical management information for a part. A selected customer standard dictates the data input and output from the database. The database can be used to create three-dimensional simulations and link text from the logistical management information to the three-dimensional graphics model.

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Abstract: The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.

Abstract: A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers.

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.