Abstract: A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.

Abstract: A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.

Abstract: A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.

Abstract: Storage-stable compositions comprising soil release polymers. Compositions are described comprising A) of from 45 to 55% by weight of one or more polyesters according to the following formula (I) wherein R and R2 independently of one another are X—(OC2H4) n—(OC3H6)m wherein X is C1-4alkyl, the —(OC2H4) groups and the —(OC3H6) groups are arranged block-wise and the block consisting of the —(OC3H6) groups is bound to a COO group or are HO—(C3H6) n is based on a molar average a number of from 12 to 120, m is based on a molar average a number of from 1 to 10, and a is based on a molar average a number of from 4 to 9, and B) of from 10 to 30% by weight of one or more alcohols selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3 -propylene glycol, 1,2 -butylene glycol, 1,3 -butylene glycol, 1,4 -butylene glycol and butyl glycol and C) of from 24 to 42% by weight of water, the amounts in each case being based on the total weight of the composition.

Abstract: Storage-stable compositions comprising soil release polymers. Compositions are described comprising *A) of from 45 to 55% by weight of one or more polyesters according to the following formula (I) wherein * R and R2 independently of one another are X—(OC2H4)n—(OC3H6)m wherein X is C1-4alkyl, the —(OC2H4) groups and the —(OC3H6) groups are arranged block-wise and the block consisting of the —(OC3H6) groups is bound to a COO group or are HO—(C3H6), *n is based on a molar average a number of from 12 to 120, * m is based on a molar average a number of from 1 to 10, and *a is based on a molar average a number of from 4 to 9, and * B) of from 10 to 30% by weight of one or more alcohols selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3 -propylene glycol, 1,2 -butylene glycol, 1,3 -butylene glycol, 1,4 -butylene glycol and butyl glycol and *C) of from 24 to 42% by weight of water, the amounts in each case being based on the total weight of the composition.

Abstract: A stent made up of at least two connected bands, each band having a pattern of undulations formed from long, short and mid-sized segments connected together by turns. In particular, the pattern includes a repeating series having five segments: a long segment, a short segment, a mid-sized segment, a mid-sized segment, a short segment (LSMMS). When adjacent bands are connected together to form the stent body, the LSMMS segment configuration forms a series of consecutive tapered gaps between the consecutive unconnected close ended turns of adjacent bands which provide greater flexibility for the stent. The series of consecutive tapered gaps allow the stent to flex with little or no interference with adjacent bands when the stent is tracked around a small radius bend in a vessel. In addition, the length of the longest rigid element of the stent is decreased to further improve flexibility. A rigid element is formed by the lengths of the segments on both sides of a connection between adjacent bands.

Abstract: An apparatus for forming a wave form for a stent from a wire includes a first forming member configured to move substantially parallel to a first axis and to move substantially parallel to a second axis that is orthogonal to the first axis, and a second forming member configured to move substantially parallel to the first axis and to move substantially parallel to the second axis. The second forming member is positioned opposite from the first forming member relative to the second axis along which the wire is configured to travel. The apparatus includes a controller configured to control movement of the first forming member relative to the wire and to control movement of the second forming member relative to the wire so that the first forming member and the second forming member deform the wire in opposite directions to form a portion of the wave form.

Abstract: A stent and method of forming a stent include a wire bent into a waveform spirally wrapped into a hollow cylindrical shape. The waveform includes a first end portion, a middle portion, and a second end portion. The middle portion of the waveform includes a first amplitude and a first period. The first end portion of the waveform includes a first plurality of amplitudes and a first plurality of periods, wherein the first plurality of amplitudes decrease from adjacent the middle portion to a first end of the wire and first plurality of frequencies increase from adjacent the middle portion to the first end of the wire. The waveform may also include a second end portion with a second plurality of amplitudes and a second plurality of periods, wherein the second plurality of amplitudes decrease from adjacent the middle portion to a second end of the wire and the second plurality of frequencies increase from adjacent the middle portion to the second end of the wire.

Abstract: A medical system for finding and displaying the location of electrodes within the body. The electrodes may be used to measure the voltage on the heart wall and display this as an activation map on a geometry representing the heart chamber.

Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 ? to 70 ?. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 ? for the a-plane MQWs.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

Abstract: A method of recovering base metal from a tailings dump which includes the steps of: aerating a surface layer of the dump; adjusting the pH and the moisture content of the surface layer to provide conditions favourable for bacterial oxidation of sulphide minerals; allowing bacterial oxidation to take place for a controlled period, after the controlled period removing the oxidized surface layer and adding water thereto for form a slurry; separating the slurry into solids and a solution; and recovering base metal from the solution.

Abstract: Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE).

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: A medical system for finding and displaying the location of electrodes within the body. The electrodes may be used to measure the voltage on the heart wall and display this as an activation map on a geometry representing the heart chamber.