Patents by Inventor Michael Craven

Michael Craven has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151319
    Abstract: A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.
    Type: Application
    Filed: January 8, 2025
    Publication date: May 8, 2025
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Clifford Ian DROWLEY, Andrew P. EDWARDS, Hao CUI, Subhash Srinivas PIDAPARTHI, Michael CRAVEN, David DEMUYNCK
  • Patent number: 12224344
    Abstract: A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: February 11, 2025
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Clifford Drowley, Andrew P. Edwards, Hao Cui, Subhash Srinivas Pidaparthi, Michael Craven, David DeMuynck
  • Publication number: 20220328688
    Abstract: A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 13, 2022
    Applicant: NexGen Power Systems, Inc.
    Inventors: Clifford Drowley, Andrew P. Edwards, Hao Cui, Subhash Srinivas Pidaparthi, Michael Craven, David DeMuynck
  • Patent number: 10336968
    Abstract: Storage-stable compositions comprising soil release polymers. Compositions are described comprising A) of from 45 to 55% by weight of one or more polyesters according to the following formula (I) wherein R and R2 independently of one another are X—(OC2H4) n—(OC3H6)m wherein X is C1-4alkyl, the —(OC2H4) groups and the —(OC3H6) groups are arranged block-wise and the block consisting of the —(OC3H6) groups is bound to a COO group or are HO—(C3H6) n is based on a molar average a number of from 12 to 120, m is based on a molar average a number of from 1 to 10, and a is based on a molar average a number of from 4 to 9, and B) of from 10 to 30% by weight of one or more alcohols selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3 -propylene glycol, 1,2 -butylene glycol, 1,3 -butylene glycol, 1,4 -butylene glycol and butyl glycol and C) of from 24 to 42% by weight of water, the amounts in each case being based on the total weight of the composition.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: July 2, 2019
    Assignee: Conopco, Inc.
    Inventors: Robert John Carswell, Carsten Cohrs, Richard Michael Craven, David Philip Jones, Peter Eugen Klug, Helen Elspeth Lyon, Peter Helmut Erich Naumann, Alyn James Parry, Henricus Wilhelmus Ida Peerlings, Alastair Richard Sanderson, Andrew Wynne
  • Publication number: 20170137755
    Abstract: Storage-stable compositions comprising soil release polymers. Compositions are described comprising *A) of from 45 to 55% by weight of one or more polyesters according to the following formula (I) wherein * R and R2 independently of one another are X—(OC2H4)n—(OC3H6)m wherein X is C1-4alkyl, the —(OC2H4) groups and the —(OC3H6) groups are arranged block-wise and the block consisting of the —(OC3H6) groups is bound to a COO group or are HO—(C3H6), *n is based on a molar average a number of from 12 to 120, * m is based on a molar average a number of from 1 to 10, and *a is based on a molar average a number of from 4 to 9, and * B) of from 10 to 30% by weight of one or more alcohols selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3 -propylene glycol, 1,2 -butylene glycol, 1,3 -butylene glycol, 1,4 -butylene glycol and butyl glycol and *C) of from 24 to 42% by weight of water, the amounts in each case being based on the total weight of the composition.
    Type: Application
    Filed: July 2, 2015
    Publication date: May 18, 2017
    Applicant: Conopco, Inc., d/b/a UNILEVER
    Inventors: Robert John CARSWELL, Carsten COHRS, Richard Michael CRAVEN, David Philip JONES, Peter Eugen KLUG, Helen Elspeth LYON, Peter Helmut Erich NAUMANN, Alyn James PARRY, Henricus Wilhelmus Ida PEERLINGS, Alastair Richard SANDERSON, Andrew WYNNE
  • Publication number: 20150061258
    Abstract: Modifications to an armrest for a wheelchair include the application of a double sided tape, cut to dimensions that fits conveniently onto the undersurface of the armrest for the wheelchair, and which double sided tape has adhered thereto a corresponding metal strip, that provides a permanent metal surface to the underside of the armrest, for application and adherence of a flashlight magnet for holding the flashlight in position during movement by the person using the wheelchair. The light may be directed forwardly, rearwardly, or removed for directing its illumination in different directions.
    Type: Application
    Filed: August 12, 2014
    Publication date: March 5, 2015
    Inventors: Robert Flores, Michael Cravens
  • Patent number: 8444112
    Abstract: A locking Y-valve has branches that can be independently locked open or locked closed. Each branch has a ball valve connected to a rotating valve column. The valve column extends through a lock plate and attaches to a housing that contains a locking mechanism. The locking mechanism has a retractable lock pin that cooperates with two recesses in the lock plate to keep the housing, valve column, and ball valve locked in place. The locking mechanism is attached to a rotatable handle outside the housing. Rotating the handle retracts the lock pin from a recess so that the handle can be moved. Releasing the handle extends the lock pin into a recess, securing the handle in place. One or more of the lock plate and housing may be integral with the Y-valve. In the preferred embodiment, the lock plate is configured to be retrofit onto existing Y-valves, so that a non-lockable Y-valve may be converted into a lockable Y-valve.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: May 21, 2013
    Inventors: Michael Cravener, Tom Conner
  • Patent number: 8052738
    Abstract: A stent made up of at least two connected bands, each band having a pattern of undulations formed from long, short and mid-sized segments connected together by turns. In particular, the pattern includes a repeating series having five segments: a long segment, a short segment, a mid-sized segment, a mid-sized segment, a short segment (LSMMS). When adjacent bands are connected together to form the stent body, the LSMMS segment configuration forms a series of consecutive tapered gaps between the consecutive unconnected close ended turns of adjacent bands which provide greater flexibility for the stent. The series of consecutive tapered gaps allow the stent to flex with little or no interference with adjacent bands when the stent is tracked around a small radius bend in a vessel. In addition, the length of the longest rigid element of the stent is decreased to further improve flexibility. A rigid element is formed by the lengths of the segments on both sides of a connection between adjacent bands.
    Type: Grant
    Filed: March 20, 2008
    Date of Patent: November 8, 2011
    Assignee: Medtronic Vascular, Inc.
    Inventor: Michael Craven
  • Publication number: 20110089356
    Abstract: A locking Y-valve has branches that can be independently locked open or locked closed. Each branch has a ball valve connected to a rotating valve column. The valve column extends through a lock plate and attaches to a housing that contains a locking mechanism. The locking mechanism has a retractable lock pin that cooperates with two recesses in the lock plate to keep the housing, valve column, and ball valve locked in place. The locking mechanism is attached to a rotatable handle outside the housing. Rotating the handle retracts the lock pin from a recess so that the handle can be moved. Releasing the handle extends the lock pin into a recess, securing the handle in place. One or more of the lock plate and housing may be integral with the Y-valve. In the preferred embodiment, the lock plate is configured to be retrofit onto existing Y-valves, so that a non-lockable Y-valve may be converted into a lockable Y-valve.
    Type: Application
    Filed: October 20, 2010
    Publication date: April 21, 2011
    Inventors: Michael Cravener, Tom Conner
  • Publication number: 20100269950
    Abstract: An apparatus for forming a wave form for a stent from a wire includes a first forming member configured to move substantially parallel to a first axis and to move substantially parallel to a second axis that is orthogonal to the first axis, and a second forming member configured to move substantially parallel to the first axis and to move substantially parallel to the second axis. The second forming member is positioned opposite from the first forming member relative to the second axis along which the wire is configured to travel. The apparatus includes a controller configured to control movement of the first forming member relative to the wire and to control movement of the second forming member relative to the wire so that the first forming member and the second forming member deform the wire in opposite directions to form a portion of the wave form.
    Type: Application
    Filed: April 23, 2009
    Publication date: October 28, 2010
    Applicant: MEDTRONIC VASCULAR, INC.
    Inventors: Mark Hoff, Daniel Moore, Michael Craven, Gianfranco Pellegrini, Erik Griswold
  • Publication number: 20090037201
    Abstract: Audio and video data associated with an answer to an interview question associated with care is received from a care provider. The audio and video data associated with the answer to the interview question is stored. At least a portion of the stored audio and video data is selectively output in response to a request for the audio and video data. In some embodiments, a portion of a profile of a care provider is output in response to a request. The profile includes audio and video data associated with answers by the care provider to a set of care-related interview questions. Information associated with a subscription to a care provider service is received. The entire profile of the care provider is output after receiving the information associated with the subscription.
    Type: Application
    Filed: August 2, 2007
    Publication date: February 5, 2009
    Inventor: Patrick Michael Cravens
  • Publication number: 20080319535
    Abstract: A stent and method of forming a stent include a wire bent into a waveform spirally wrapped into a hollow cylindrical shape. The waveform includes a first end portion, a middle portion, and a second end portion. The middle portion of the waveform includes a first amplitude and a first period. The first end portion of the waveform includes a first plurality of amplitudes and a first plurality of periods, wherein the first plurality of amplitudes decrease from adjacent the middle portion to a first end of the wire and first plurality of frequencies increase from adjacent the middle portion to the first end of the wire. The waveform may also include a second end portion with a second plurality of amplitudes and a second plurality of periods, wherein the second plurality of amplitudes decrease from adjacent the middle portion to a second end of the wire and the second plurality of frequencies increase from adjacent the middle portion to the second end of the wire.
    Type: Application
    Filed: June 25, 2007
    Publication date: December 25, 2008
    Applicant: Medtronic Vascular, Inc.
    Inventors: Michael Craven, Michael Krivoruchko, Gianfranco Pelligrini, Matthew Baldwin
  • Patent number: 7263397
    Abstract: A medical system for finding and displaying the location of electrodes within the body. The electrodes may be used to measure the voltage on the heart wall and display this as an activation map on a geometry representing the heart chamber.
    Type: Grant
    Filed: April 6, 2004
    Date of Patent: August 28, 2007
    Assignee: St. Jude Medical, Atrial Fibrillation Division, Inc.
    Inventors: John A. Hauck, Jeff A. Schweitzer, Michael Craven, Valtino Afonso, Holly Cotner, Frank Callaghan, John Schultz
  • Publication number: 20070128844
    Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 ? to 70 ?. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 ? for the a-plane MQWs.
    Type: Application
    Filed: December 11, 2003
    Publication date: June 7, 2007
    Inventors: Michael Craven, Steven DenBaars
  • Publication number: 20070126023
    Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
    Type: Application
    Filed: February 1, 2007
    Publication date: June 7, 2007
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Benjamin Haskell, Michael Craven, Paul Fini, Steven DenBaars, James Speck, Shuji Nakamura
  • Publication number: 20060278865
    Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.
    Type: Application
    Filed: June 21, 2006
    Publication date: December 14, 2006
    Inventors: Michael Craven, Stacia Keller, Steven DenBaars, Tal Margalith, James Speck, Shuji Nakamura, Umesh Mishra
  • Publication number: 20060128124
    Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
    Type: Application
    Filed: July 15, 2003
    Publication date: June 15, 2006
    Inventors: Benjamin Haskell, Michael Craven, Paul Fini, Steven DenBaars, James Speck, Shuji Nakamura
  • Patent number: 7018593
    Abstract: A method of recovering base metal from a tailings dump which includes the steps of: aerating a surface layer of the dump; adjusting the pH and the moisture content of the surface layer to provide conditions favourable for bacterial oxidation of sulphide minerals; allowing bacterial oxidation to take place for a controlled period, after the controlled period removing the oxidized surface layer and adding water thereto for form a slurry; separating the slurry into solids and a solution; and recovering base metal from the solution.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: March 28, 2006
    Assignee: Billiton SA Limited
    Inventors: Peter Michael Craven, Trevor Hugh Tunley
  • Publication number: 20060008941
    Abstract: Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE).
    Type: Application
    Filed: July 15, 2003
    Publication date: January 12, 2006
    Applicant: BASF Aktiengesellschaft
    Inventors: Benjamin Haskell, Paul Fini, Shigemasa Matsuda, Michael Craven, Steven DenBaars, James Speck, Shuji Nakamura
  • Publication number: 20050040385
    Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
    Type: Application
    Filed: April 15, 2003
    Publication date: February 24, 2005
    Inventors: Michael Craven, Stacia Keller, Steven Denbaars, Tal Margalith, James Speck, Shuji Nakamura, Umesh Mishra