Patents by Inventor Michael D. Barth

Michael D. Barth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11921338
    Abstract: The present disclosure relates to a telecommunications distribution hub having a cabinet that defines a primary compartment. The cabinet also includes one or more main doors for accessing the primary compartment. Telecommunications equipment is mounted within the primary compartment. The distribution hub further includes a secondary compartment that can be accessed from an exterior of the cabinet without accessing the primary compartment. A grounding interface is accessible from within the secondary compartment.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: March 5, 2024
    Assignee: CommScope Technologies LLC
    Inventors: Edward T. Landry, Craig M. Standish, Steve Anderson, Joshua A. Zabel, Ronald A. Beck, Michael Kenneth Barth, Soutsada Vongseng, Matthew D. Ferris
  • Publication number: 20170331960
    Abstract: An inmate communication system and method of using are described herein for obtaining a lowest session rate. The inmate communication system includes a session boarder controller (SBC) server that analyses data from multiple carriers, historical sessions, and additional factors such as quality of service to determine a lowest rate for the session. The SBC server then routes the session using the carrier that has the determined lowest rate for the session. Further, the SBC server is configured to include both local and location redundancies to avoid interruptions in session service.
    Type: Application
    Filed: May 10, 2016
    Publication date: November 16, 2017
    Inventors: Stephen Lee HODGE, Garth JOHNSON, Krishna KOILADA, Athar WAQAS, Michael D. BARTH
  • Patent number: 7309651
    Abstract: Doping copper interconnects (100) with silicon (115) has been shown to improve Electromigration and Via Stress Migration reliability. After copper (118) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH4 over the copper interconnect (100) for 0.5 to 5 seconds at a temperature of 325-425° C.
    Type: Grant
    Filed: October 30, 2003
    Date of Patent: December 18, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Jeffrey A. West, Michael D. Barth, Steven P. Zuhoski