Abstract: Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.

Abstract: A framework for developing high quality factor (Q) material for electronic applications in the radio frequency range is provided. In one implementation, ceramic materials having a tungsten bronze crystal structure is modified by substituting one or more elements at one or more lattice sites on the crystal structure. The substitute elements are selected based on the ionic radius and other factors. In other implementations, the modified ceramic material is prepared in combination with compositions such as rutile or a perovskite to form a orthorhombic hybrid of perovskite and tetragonal tungsten bronze.

Abstract: Embodiments and aspects of the present invention relate to an enhanced hexagonal ferrite magnetic material doped with an alkali metal. The material retains substantial magnetic permeability up to frequencies in the GHz range with low losses. The material may be used in high frequency applications in devices such as transformers, inductors, circulators, and absorbers.

Abstract: Embodiments disclosed herein include methods of modifying synthetic garnets used in RF applications to reduce or eliminate Yttrium or other rare earth metals in the garnets without adversely affecting the magnetic properties of the material. Some embodiments include substituting Bismuth for some of the Yttrium on the dodecahedral sites and introducing one or more high valency ions to the octahedral and tetrahedral sites. Calcium may also be added to the dodecahedral sites for valency compensation induced by the high valency ions, which could effectively displace all or most of the Yttrium (Y) in microwave device garnets. The modified synthetic garnets with substituted Yttrium (Y) can be used in various microwave magnetic devices such as circulators, isolators and resonators.

Abstract: Processing techniques for forming a textured hexagonal ferrite materials such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) to enhance the resonant frequency and other magnetic properties of the material for high frequency applications are provided. The processing techniques include magnetic texturing by using fine grain particles and sintering the material at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The processing techniques also may include aligning M-phase (BaFe12O19 uniaxial magnetization) with non-magnetic additives in a static magnetic field and reacting with BaO source and CoO to form Z-phase (Ba3Me2Fe24O42). In some implementations, processing techniques includes aligning Co2Z phase (planar magnetization) with magnetic texturing occurring in a rotating magnetic field.

Abstract: Embodiments and aspects of the present invention relate to an enhanced hexagonal ferrite magnetic material doped with an alkali metal. The material retains substantial magnetic permeability up to frequencies in the GHz range with low losses. The material may be used in high frequency applications in devices such as transformers, inductors, circulators, and absorbers.

Abstract: Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.

Abstract: An RFID chip is embedded in a device having a body that includes a low-dielectric loss material including at least one of barium stannate, barium cerate, barium tungstate and barium molybdate.

Abstract: Processing techniques for forming a textured hexagonal ferrite materials such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) to enhance the resonant frequency and other magnetic properties of the material for high frequency applications are provided. The processing techniques include magnetic texturing by using fine grain particles and sintering the material at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The processing techniques also may include aligning M-phase (BaFe12O19 uniaxial magnetization) with non-magnetic additives in a static magnetic field and reacting with BaO source and CoO to form Z-phase (Ba3Me2Fe24O42). In some implementations, processing techniques includes aligning Co2Z phase (planar magnetization) with magnetic texturing occurring in a rotating magnetic field.

Abstract: A framework for developing high quality factor (Q) material for electronic applications in the radio frequency range is provided. In one implementation, ceramic materials having a tungsten bronze crystal structure is modified by substituting one or more elements at one or more lattice sites on the crystal structure. The substitute elements are selected based on the ionic radius and other factors. In other implementations, the modified ceramic material is prepared in combination with compositions such as rutile or a perovskite to form a orthorhombic hybrid of perovskite and tetragonal tungsten bronze.

Abstract: Ceramic dielectric materials that can be utilized as electronic components, such as dielectric resonators are disclosed. The material can have a formula Ba12M?(28+a/3)Ti(54?a-b)M?aGebO162, wherein M? is at least one rare earth element selected from the group consisting of lanthanum, neodymium, samarium, gadolinium, and yttrium, M? is at least one element selected from the group consisting of aluminum, gallium, chromium, indium, scandium, and ytterbium, 0?a?6, and 0?b?3. The ceramic dielectric material can also have a formula Ba12M?(28+2x/3)Ti(54?x?y)M??xGeyO162, wherein M? is at least one rare earth element selected from the group consisting of lanthanum, neodymium, samarium, gadolinium, and yttrium, M?? is at least one metal selected from the group consisting of magnesium, zinc, nickel, and cobalt, 0?x?3, and 0?y?3. One or more aspects of the present invention pertain to methods of fabricating a dielectric component. Methods of synthesizing the disclosed ceramic dielectric materials are also disclosed.

Abstract: Embodiments disclosed herein include methods of modifying synthetic garnets used in RF applications to reduce or eliminate Yttrium or other rare earth metals in the garnets without adversely affecting the magnetic properties of the material. Some embodiments include substituting Bismuth for some of the Yttrium on the dodecahedral sites and introducing one or more high valency ions to the octahedral and tetrahedral sites. Calcium may also be added to the dodecahedral sites for valency compensation induced by the high valency ions, which could effectively displace all or most of the Yttrium (Y) in microwave device garnets. The modified synthetic garnets with substituted Yttrium (Y) can be used in various microwave magnetic devices such as circulators, isolators and resonators.

Abstract: Ceramic dielectric materials that can be utilized as electronic components, such as dielectric resonators are disclosed. The material can have a formula Ba12M?(28+a/3)Ti(54?a-b)M?aGebO162, wherein M? is at least one rare earth element selected from the group consisting of lanthanum, neodymium, samarium, gadolinium, and yttrium, M? is at least one element selected from the group consisting of aluminum, gallium, chromium, indium, scandium, and ytterbium, 0?a?6, and 0?b?3. The ceramic dielectric material can also have a formula Ba12M?(28+2x/3)Ti(54?x?y)M??xGeyO162, wherein M? is at least one rare earth element selected from the group consisting of lanthanum, neodymium, samarium, gadolinium, and yttrium, M?? is at least one metal selected from the group consisting of magnesium, zinc, nickel, and cobalt, 0?x?3, and 0?y?3. One or more aspects of the present invention pertain to methods of fabricating a dielectric component. Methods of synthesizing the disclosed ceramic dielectric materials are also disclosed.

Abstract: An RFID chip is embedded in a device having a body that includes a low-dielectric loss material including at least one of barium stannate, barium cerate, barium tungstate and barium molybdate.

Abstract: A method for manufacturing barium zirconate particles includes providing a mixture of materials that includes barium, zirconium and a sintering aid, wherein the sintering aid includes at least one of barium tungstate, potassium niobate, tungsten oxide, barium molybdate, molybdenum oxide, potassium tantalate, potassium oxide, sodium niobate, sodium tantalate, sodium oxide, lithium niobate, lithium tantalate, lithium oxide, copper oxide, manganese oxide, zinc oxide, calcium zirconate and strontium zirconate; and heating the mixture of materials to produce barium zirconate particles that include the sintering aid.

Abstract: A method for manufacturing barium zirconate particles includes providing a mixture of materials that includes barium, zirconium and a sintering aid, wherein the sintering aid includes at least one of barium tungstate, potassium niobate, tungsten oxide, barium molybdate, molybdenum oxide, potassium tantalate, potassium oxide, sodium niobate, sodium tantalate, sodium oxide, lithium niobate, lithium tantalate, lithium oxide, copper oxide, manganese oxide, zinc oxide, calcium zirconate and strontium zirconate; and heating the mixture of materials to produce barium zirconate particles that include the sintering aid.

Abstract: According to one exemplary embodiment, a wide temperature range dielectric absorber includes a dielectric absorber comprising a blend of lanthanum oxide, strontium oxide, and cobalt oxide, and is represented by (1-z)[La1-xSrxCoO3±y]+z[La2-xSrxCoO4±y]. The dielectric absorber includes a first crystalline structure existing independently from a second crystalline structure causing the dielectric absorption composition to have a wide temperature range of electromagnetic radiation absorption. In one embodiment, the first crystalline structure is a perovskite crystalline structure and the second crystalline structure is a potassium nickel fluoride crystalline structure.

Abstract: According to one exemplary embodiment, a wide temperature range dielectric absorber includes a dielectric absorber comprising a blend of lanthanum oxide, strontium oxide, and cobalt oxide, and is represented by (1?z)[La1?xSrxCoO3±y]+z[La2?xSrxCoO4±y]. The dielectric absorber includes a first crystalline structure existing independently from a second crystalline structure causing the dielectric absorption composition to have a wide temperature range of electromagnetic radiation absorption. In one embodiment, the first crystalline structure is a perovskite crystalline structure and the second crystalline structure is a potassium nickel fluoride crystalline structure.

Abstract: A method for manufacturing barium zirconate particles includes providing a mixture of materials that includes barium, zirconium and a sintering aid, wherein the sintering aid includes at least one of barium tungstate, potassium niobate, tungsten oxide, barium molybdate, molybdenum oxide, potassium tantalate, potassium oxide, sodium niobate, sodium tantalate, sodium oxide, lithium niobate, lithium tantalate, lithium oxide, copper oxide, manganese oxide, zinc oxide, calcium zirconate and strontium zirconate; and heating the mixture of materials to produce barium zirconate particles that include the sintering aid.