Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. A channel-material string is in individual channel openings in the vertically-alternating first tiers and second tiers. A conductor-material contact is in the individual channel openings directly against the channel material of individual of the channel-material strings. The conductor-material contacts are vertically recessed in the individual channel openings. A conductive via is formed in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening. Other aspects, including structure independent of method, are disclosed.

Abstract: A compound of formula MOL-M-L, wherein M is a 5 or 6-coordinate metal, L is a bidentate ligand, and MOL is a compound of formula (II): (II) wherein X is C and R\ R2, R3, R4, R5, R6, R7, R8, R9, R10, R11 and R12 are as defined herein. In another embodiment, a system comprises a substrate and a compound of the present disclosure immobilized on the substrate. In still another embodiment, a method comprises introducing a reagent to a substrate presenting the compound of the present disclosure.