Abstract: An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed. The display cell structures may also have one or more gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A cell may have more than one phosphor, and in particular may have red, green, and blue phosphors selectively arranged. Each pixel site may have one anode of each color phosphor. The phosphors are preferably prepared in situ in an electrically-conductive thin-film or surface-layer form during fabrication of the display. A preferred fabrication process integrates an etch stop with the in situ phosphor process, the etch stop precisely defining the depth of an opening in the display cell structure.

Abstract: A phosphor comprises, in atomic percentages, 90% to 100% of a mixed metal oxide MxTyOz, wherein M is a metal selected from Zn, Sn, In, Cu, and combinations thereof, T is a refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and combinations thereof, and O is Oxygen, x, y, and z being chosen such that z is at most stoichiometric for MxTyOz; and 0% to 10% of a dopant comprising a substance selected from a rare earth element of the lanthanide series, Mn, Cr, and combinations thereof, or stoichiometrically excess zinc, copper, tin, or indium. Cathodoluminescent phosphor compositions stimulable by electrons of very low energy are prepared from metal oxides treated with refractory metals in various processes disclosed.

Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.

Abstract: An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed which are stimulable by electrons of very low energy. The display cell structures may also have gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A preferred fabrication process integrates an etch stop with an in situ phosphor formation process. The etch stop precisely defines the depth of an opening in the display cell structure.

Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter.

Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.

Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter.