Abstract: Radiation hard, N-channel MOS devices comprising active regions surrounded by field oxide protected by an underlying region of heavily doped p-type material. The guard region is doped heavily enough to provide field inversion voltages in the range of 50 V to 60 V prior to irradiation. The guard region is separated from the source and drain regions to provide acceptably high breakdown voltages. The devices are produced with minor variations to well known, high density local oxidation of silicon-type processes.

Abstract: In a channel formed in one surface of a semiconductor substrate having a first conductivity, e.g. N type, a layer of material having a second conductivity type, e.g. P type boron, and a layer of relatively low resistance material such as Tungsten in contact with the first layer but insulated from the substrate. Second conductivity type tubs and the like can be formed adjacent the bus and in direct contact therewith through the first layer.

Abstract: A self-aligned MOS transistor having improved operating characteristics and higher packing density and a method for fabricating the device. Resistance of the gate electrode is reduced substantially by forming the electrode of a metal silicide. Resistance of the source and drain regions is likewise reduced substantially by forming a metal silicide in the doped junction region which allows those regions to be smaller and to require less area. The silicided source and drain regions are self-aligned with and closely spaced to the silicided gate electrode. This is provided by a process which utilizes and makes possible an undercut etching of a polycrystalline silicon gate electrode.