Patents by Inventor Michael Darsillo

Michael Darsillo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER AND ASSOCIATED MATERIALS AND METHOD OF USING SAME
    Publication number: 20100248480
    Abstract: A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
    Type: Application
    Filed: June 10, 2010
    Publication date: September 30, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS INC.
    Inventors: Michael Darsillo, Peter Wrschka, Karl Boggs
  • Chemical mechanical polishing compositions for copper and associated materials and method of using same
    Patent number: 7736405
    Abstract: A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
    Type: Grant
    Filed: May 12, 2003
    Date of Patent: June 15, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Michael Darsillo, Peter Wrschka, Karl Boggs
  • Passivative chemical mechanical polishing composition for copper film planarization
    Patent number: 7361603
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
    Type: Grant
    Filed: April 28, 2005
    Date of Patent: April 22, 2008
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jun Liu, Mackenzie King, Michael Darsillo, Karl E. Boggs, Jeffrey F. Roeder, Thomas H. Baum
  • Passivative chemical mechanical polishing composition for copper film planarization
    Patent number: 7300601
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: November 27, 2007
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jun Liu, Peter Wrschka, David Bernhard, MacKenzie King, Michael Darsillo, Karl Boggs
  • PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION
    Publication number: 20070181852
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
    Type: Application
    Filed: April 10, 2007
    Publication date: August 9, 2007
    Inventors: Jun Liu, Peter Wrschka, David Bernhard, MacKenzie King, Michael Darsillo, Karl Boggs
  • Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
    Publication number: 20060249482
    Abstract: A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and an abrasive.
    Type: Application
    Filed: May 10, 2004
    Publication date: November 9, 2006
    Inventors: Peter Wrschka, David Bernhard, Karl Boggs, Michael Darsillo
  • Method of passivating chemical mechanical polishing compositions for copper film planarization processes
    Publication number: 20050263490
    Abstract: A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
    Type: Application
    Filed: April 28, 2005
    Publication date: December 1, 2005
    Inventors: Jun Liu, Mackenzie King, Michael Darsillo, Karl Boggs, Jeffrey Roeder, Thomas Baum
  • Passivative chemical mechanical polishing composition for copper film planarization
    Publication number: 20050255693
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
    Type: Application
    Filed: April 28, 2005
    Publication date: November 17, 2005
    Inventors: Jun Liu, Mackenzie King, Michael Darsillo, Karl Boggs, Jeffrey Roeder, Thomas Baum
  • Recording medium
    Publication number: 20050170108
    Abstract: The invention provides a recording medium comprising a substrate having a glossy coating thereon, wherein the glossy coating comprises a binder and alumina particles that are aggregates of primary particles.
    Type: Application
    Filed: March 28, 2005
    Publication date: August 4, 2005
    Applicant: Cabot Corporation
    Inventors: Michael Darsillo, David Fluck, Rudiger Laufhutte
  • Recording medium
    Publication number: 20050170107
    Abstract: The invention provides a coating composition comprising alumina particles and a binder, wherein the alumina particles are aggregates of primary particles.
    Type: Application
    Filed: March 28, 2005
    Publication date: August 4, 2005
    Applicant: Cabot Corporation
    Inventors: Michael Darsillo, David Fluck, Rudiger Laufhutte
  • Ink jet recording medium comprising amine-treated silica
    Publication number: 20050123697
    Abstract: This invention pertains to an ink jet recording medium comprises a flexible substrate and a coating composition coated on at least one surface of the substrate, wherein the coating composition comprises the product formed from the contact between fumed silica particles and at least one aminoorganosiloxane. The invention also pertains to a method for the preparation of such an ink jet recording medium and to methods for the preparation of a coating composition and a dispersion useful in the preparation of such an ink jet recording medium.
    Type: Application
    Filed: January 13, 2005
    Publication date: June 9, 2005
    Applicant: Cabot Corporation
    Inventors: Michael Morris, Michael Darsillo, David Fluck, Jason Hilton, Rudiger Laufhutte, Michael Lucarelli
  • Chemical mechanical polishing compositions for copper and associated materials and method of using same
    Publication number: 20040229461
    Abstract: A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
    Type: Application
    Filed: May 12, 2003
    Publication date: November 18, 2004
    Inventors: Michael Darsillo, Peter Wrschka, Karl Boggs
  • Passivative chemical mechanical polishing composition for copper film planarization
    Publication number: 20040108302
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
    Type: Application
    Filed: December 10, 2002
    Publication date: June 10, 2004
    Inventors: Jun Liu, Peter Wrschka, David Bernhard, MacKenzie King, Michael Darsillo, Karl Boggs