Patents by Inventor Michael David Bic

Michael David Bic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6902458
    Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
    Type: Grant
    Filed: January 12, 2004
    Date of Patent: June 7, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizhang Chen, Michael David Bic, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning