Patents by Inventor Michael David Lange

Michael David Lange has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low contact resistance ohmic contact for a high electron mobility transistor and fabrication method thereof
    Publication number: 20080258242
    Abstract: A semiconductor device (100) is formed on a semi-insulating semiconductor substrate (101) including a channel layer (104), a spacer layer (105), an electron supply layer (106), and a barrier layer (108). A composite layer (110) is formed over the barrier layer (108). A metal (116) is deposited over the composite layer (110). The metal (116) is annealed to promote a chemical reaction between the metal (116) and the composite layer (110) in which a portion of the metal sinks into the composite layer (110) and forms an ohmic contact with the composite layer.
    Type: Application
    Filed: April 19, 2007
    Publication date: October 23, 2008
    Applicant: Northrop Grumman Space and Mission Systems Corp.
    Inventors: Xiaobing Mei, Ping-Chih Chang, Michael David Lange