Patents by Inventor Michael Dean Van Patten
Michael Dean Van Patten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10217706Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: GrantFiled: August 24, 2017Date of Patent: February 26, 2019Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Publication number: 20170352616Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: ApplicationFiled: August 24, 2017Publication date: December 7, 2017Applicant: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 9780029Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: GrantFiled: April 29, 2015Date of Patent: October 3, 2017Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 9358753Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: GrantFiled: July 1, 2015Date of Patent: June 7, 2016Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Publication number: 20150321447Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: ApplicationFiled: July 1, 2015Publication date: November 12, 2015Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Publication number: 20150235938Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: ApplicationFiled: April 29, 2015Publication date: August 20, 2015Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 9102121Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: GrantFiled: May 3, 2012Date of Patent: August 11, 2015Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Patent number: 9048292Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: GrantFiled: October 25, 2012Date of Patent: June 2, 2015Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Publication number: 20140117529Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: ApplicationFiled: October 25, 2012Publication date: May 1, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Publication number: 20130295335Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: ApplicationFiled: May 3, 2012Publication date: November 7, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt