Abstract: A light-emitting circuit includes a light-emitting transistor and a voltage supply in communication with the light-emitting transistor to bias the light-emitting transistor in a reasonably bright state. A reasonably bright state is a state in which light emission approaches the greatest for a given drain-source current in the light-emitting transistor. In one aspect, the light-emitting circuit is in communication with a device under test and configured so that the light-emitting transistor emits photons in a manner indicative of an operation of the device under test. The light-emitting circuit may be disposed in a first semiconductor layer, and the device under test may be disposed in a second semiconductor layer. Further, the first semiconductor layer may be included in a first die, and the second semiconductor layer may be included in a second die.

Abstract: A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.

Abstract: A light-emitting circuit includes a light-emitting transistor and a voltage supply in communication with the light-emitting transistor to bias the light-emitting transistor in a reasonably bright state. A reasonably bright state is a state in which light emission approaches the greatest for a given drain-source current in the light-emitting transistor. In one aspect, the light-emitting circuit is in communication with a device under test and configured so that the light-emitting transistor emits photons in a manner indicative of an operation of the device under test. The light-emitting circuit may be disposed in a first semiconductor layer, and the device under test may be disposed in a second semiconductor layer. Further, the first semiconductor layer may be included in a first die, and the second semiconductor layer may be included in a second die.

Abstract: A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: Nano-machining for circuit edits through the front side or backside of an integrated circuit may be performed using a scanning probe system. The system may create access holes with smaller dimensions and facilitate nano-machining endpoint detection in some embodiments.

Abstract: A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.

Abstract: Nano-machining for circuit edits through the front side or backside of an integrated circuit may be performed using a scanning probe system. The system may create access holes with smaller dimensions and facilitate nano-machining endpoint detection in some embodiments.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.

Abstract: An integrated circuit device is disclosed. The device comprises a die that has functional units on a first surface and a cooling system arranged adjacent a second surface opposite the first surface. The cooling system comprises a least one microchannel to contain a cooling liquid and to allow flow of the cooling liquid and at least one reservoir arranged adjacent to a region of the die. There is at least one valve between the reservoir and the microchannel to allow the cooling liquid to flow into the reservoir wherein flow of the cooling liquid depends upon a temperature of the die region.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: An integrated circuit device is disclosed. The device comprises a die that has functional units on a first surface and a cooling system arranged adjacent a second surface opposite the first surface. The cooling system comprises a least one microchannel to contain a cooling liquid and to allow flow of the cooling liquid and at least one reservoir arranged adjacent to a region of the die. There is at least one valve between the reservoir and the microchannel to allow the cooling liquid to flow into the reservoir wherein flow of the cooling liquid depends upon a temperature of the die region.

Abstract: A material may be patterned and defined on the upper electrode of a film bulk acoustic resonator to provide a mass loading effect that adjusts the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. The applied material that has a high degree of etch selectivity with respect to the material of the upper electrode of the film bulk acoustic resonator.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: A hot stage for a scanning probe microscope includes a substrate having a dielectric window region which is stress compensated to be held in mild tension at elevated temperatures. A heating element is supplied to heat a specimen deposited on the dielectric widow region and the scanning probe microscope is used to observe specimen characteristics at the elevated temperatures. The dielectric window region is configured to be thermally isolated from the rest of the hot stage allowing only a minimum amount of heat to be dissipated into the scanning probe microscope. Temperature sensing resistors are included for monitoring the temperature in the dielectric window region. Conductivity cell electrodes can also be included for sensing the conductivity and capacitance of the specimen. Furthermore, additional control and measurement hardware, such as a temperature sensor circuit, evaluation station, the ramp generator circuit, etc. can be included to provide additional system features.