Patents by Inventor Michael Dodson
Michael Dodson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11873224Abstract: A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm?1K?1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.Type: GrantFiled: May 14, 2019Date of Patent: January 16, 2024Assignee: Element Six Technologies LimitedInventors: Gruffudd Trefor Williams, Richard Stuart Balmer, Joseph Michael Dodson
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Patent number: 11488805Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.Type: GrantFiled: June 28, 2019Date of Patent: November 1, 2022Assignee: Element Six Technologies LimitedInventors: John Robert Brandon, Alexander Lamb Cullen, Stephen David Williams, Joseph Michael Dodson, Jonathan James Wilman, Christopher John Howard Wort
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Patent number: 11075499Abstract: A heat sink comprising a heat spreader (2) made from synthetic diamond and having a front surface for mounting one or more components to be cooled like a laser disc (8) and a rear surface for direct fluid cooling (10). A plurality of ribs (4,7) is bonded to the rear surface of the heat spreader (2) to stiffen the heat spreader. Both the heat spreader and the plurality of ribs are formed of synthetic diamond material. The ribs (4,7) may be fixed to the heat spreader by braze bonds (6).Type: GrantFiled: December 15, 2017Date of Patent: July 27, 2021Assignee: Element Six Technologies LimitedInventor: Joseph Michael Dodson
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Publication number: 20210206647Abstract: A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm?1K?1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.Type: ApplicationFiled: May 14, 2019Publication date: July 8, 2021Applicant: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: GRUFFUDD TREFOR WILLIAMS, RICHARD STUART BALMER, JOSEPH MICHAEL DODSON
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Publication number: 20200088482Abstract: A heat sink comprising a heat spreader (2) made from synthetic diamond and having a front surface for mounting one or more components to be cooled like a laser disc (8) and a rear surface for direct fluid cooling (10). A plurality of ribs (4,7) is bonded to the rear surface of the heat spreader (2) to stiffen the heat spreader. Both the heat spreader and the plurality of ribs are formed of synthetic diamond material. The ribs (4,7) may be fixed to the heat spreader by braze bonds (6).Type: ApplicationFiled: December 15, 2017Publication date: March 19, 2020Applicant: ELEMENT SIX TECHNOLOGIES LIMITEDInventor: JOSEPH MICHAEL DODSON
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Publication number: 20190318917Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.Type: ApplicationFiled: June 28, 2019Publication date: October 17, 2019Applicant: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: JOHN ROBERT BRANDON, ALEXANDER LAMB CULLEN, STEPHEN DAVID WILLIAMS, JOSEPH MICHAEL DODSON, JONATHAN JAMES WILMAN, CHRISTOPHER JOHN HOWARD WORT, HELEN WILMAN
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Patent number: 10407770Abstract: A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.Type: GrantFiled: January 17, 2018Date of Patent: September 10, 2019Assignee: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: Paul Nicholas Inglis, John Robert Brandon, Joseph Michael Dodson, Timothy Peter Mollart
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Patent number: 10403477Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is conType: GrantFiled: December 14, 2011Date of Patent: September 3, 2019Assignee: Element Six Technologies LimitedInventors: John Robert Brandon, Alexander Lamb Cullen, Stephen David Williams, Joseph Michael Dodson, Helen Wilman, Christopher John Howard Wort
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Patent number: 10290385Abstract: A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionized water and 0.1M KNO3 as a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm?2; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.Type: GrantFiled: March 13, 2013Date of Patent: May 14, 2019Assignee: Element Six LimitedInventors: Eleni Bitziou, Laura Anne Hutton, Julie Victoria MacPherson, Mark Edward Newton, Patrick Robert Unwin, Nicola Louise Palmer, Timothy Peter Mollart, Joseph Michael Dodson
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Patent number: 10073805Abstract: Methods and structure for utilizing a virtual Expansion ROM. One exemplary embodiment is a management device. The management device includes a memory, a Peripheral Component Interconnect Express (PCIe) link, and a processor. The memory stores Expansion Read-Only Memory (Expansion ROM) boot instructions for a host. The processor identifies devices in a PCIe hierarchy by transmitting PCIe enumeration requests via the PCIe link. The processor also generates a synthetic PCIe hierarchy that includes an added virtual Expansion ROM which is not present in the PCIe hierarchy, and provides responses describing the synthetic PCIe hierarchy to a host. Furthermore, the processor acquires PCIe read requests initiated by the host that are directed to the virtual Expansion ROM, and provides boot instructions to the host from the memory based on the PCIe read requests.Type: GrantFiled: September 3, 2015Date of Patent: September 11, 2018Assignee: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.Inventors: Rajendran Vishwanathan, Nagarajan Subramaniyan, Jeffrey Michael Dodson, Jack Regula
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Patent number: 10028405Abstract: A data center rack allocation system allocates rack computer systems to be installed at particular rack positions based at least in part upon correlating infrastructure support requirements of the rack computer systems with infrastructure support capacities associated with the rack position. Such allocation can enable rapid incremental deployment of infrastructure and rack computer systems in a data center with flexibility to allocate various types of rack computer systems, with various support requirements, to available infrastructure. The system can identify infrastructure connections available to provide certain types of support capacity and can associate such connections with various rack positions in data centers. The system can determine the support requirements of a rack computer system in response to a determination that the rack computer system is presently inbound for delivery to a data center.Type: GrantFiled: September 23, 2014Date of Patent: July 17, 2018Assignee: Amazon Technologies, Inc.Inventors: Jignesh Gandhi, Robert Anthony Smith, Dong Wang, Ross Michael Wampler, Wei Liu, Junlin Yi, Justin Michael Dodson, Adam Thomas Creswell
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Publication number: 20180179626Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.Type: ApplicationFiled: January 17, 2018Publication date: June 28, 2018Inventors: Paul Nicholas Inglis, John Robert Brandon, Joseph Michael Dodson, Timothy Peter Mollart
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Patent number: 9909209Abstract: A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.Type: GrantFiled: December 12, 2012Date of Patent: March 6, 2018Assignee: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: Paul Nicholas Inglis, John Robert Brandon, Joseph Michael Dodson, Timothy Peter Mollart
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Patent number: 9738970Abstract: The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.Type: GrantFiled: September 11, 2014Date of Patent: August 22, 2017Assignee: Element Six LimitedInventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
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Patent number: 9720133Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.Type: GrantFiled: December 13, 2012Date of Patent: August 1, 2017Assignee: Element Six Technologies LimitedInventors: Paul Nicholas Inglis, John Robert Brandon, Joseph Michael Dodson, Timothy Peter Mollart
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Publication number: 20170068636Abstract: Methods and structure for utilizing a virtual Expansion ROM. One exemplary embodiment is a management device. The management device includes a memory, a Peripheral Component Interconnect Express (PCIe) link, and a processor. The memory stores Expansion Read-Only Memory (Expansion ROM) boot instructions for a host. The processor identifies devices in a PCIe hierarchy by transmitting PCIe enumeration requests via the PCIe link. The processor also generates a synthetic PCIe hierarchy that includes an added virtual Expansion ROM which is not present in the PCIe hierarchy, and provides responses describing the synthetic PCIe hierarchy to a host. Furthermore, the processor acquires PCIe read requests initiated by the host that are directed to the virtual Expansion ROM, and provides boot instructions to the host from the memory based on the PCIe read requests.Type: ApplicationFiled: September 3, 2015Publication date: March 9, 2017Inventors: Rajendran Vishwanathan, Nagarajan Subramaniyan, Jeffrey Michael Dodson, Jack Regula
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Patent number: 9478938Abstract: A method of fabricating a polycrystalline CVD synthetic diamond material having an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm?1K?1, the method comprising: loading a refractory metal substrate into a CVD reactor; locating a refractory metal guard ring around a peripheral region of the refractory metal substrate, the refractory metal guard ring defining a gap between an edge of the refractory metal substrate and the refractory metal guard ring having a width 1.5 mm to 5.0 mm; introducing microwaves into the CVD reactor at a power such that the power density in terms of power per unit area of the refractory metal substrate is in a range 2.5 to 4.5 W mm?2; introducing process gas into the CVD reactor wherein the process gas within the CVD reactor comprises a nitrogen concentration in a range 600 ppb to 1500 ppb calculated as molecular nitrogen N2, a carbon containing gas concentration in a range 0.5% to 3.Type: GrantFiled: August 9, 2013Date of Patent: October 25, 2016Assignee: Element Six Technologies LimitedInventors: Gruffudd Trefor Williams, Joseph Michael Dodson, Paul Nicolas Inglis, Christopher John Kelly
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Patent number: 9410242Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.Type: GrantFiled: December 14, 2011Date of Patent: August 9, 2016Assignee: Element Six Technologies LimitedInventors: Geoffrey Alan Scarsbrook, Jonathan James Wilman, Helen Wilman, Joseph Michael Dodson, John Robert Brandon, Steven Edward Coe, Christopher John Howard Wort
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Publication number: 20160154756Abstract: A method of providing unordered packet routing in a multi-path PCIe switch fabric is provided. Fabric egress port congestion is measured and distributed to all ports within a switch and to neighboring switches. An unordered route choice vector is generated by table lookup. The local congestion mask vector identifies which of these choices has local congestion. A next hop masked choice vector generated by table lookup is gated with the next hop congestion mask vectors, received from neighboring switches, to identify the choices that have next hop congestion. Congested choices are excluded by masking. If multiple choices remain at the conclusion of the masking process, then a selection is made by round-robin among the surviving choices. If no choices remain, the selection is made by round robin among the original choices. The final selection is mapped to an egress port on the switch by table lookup.Type: ApplicationFiled: December 2, 2014Publication date: June 2, 2016Inventors: Jeffrey Michael DODSON, Jack REGULA, Natwar AGRAWAL
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Patent number: 9223734Abstract: A method of sharing of a function of a device with a plurality of hosts through a PCIe switch is provided. A function on a device is presented to a first host and a second host through the switch. Read and write on the function's register set within the first host and within the second host are captured, thereby enabling a management system of the switch to create a shadow copy of the first host register sets and second host register sets. The creation of sets of shadow queues on the management system is enabled. The first set of shadow queues of the first set of registers is used to direct read and write operations from the first host to the function. The second set of shadow queues of the second set of registers is used to direct read and write operations from the second host to the function.Type: GrantFiled: December 13, 2013Date of Patent: December 29, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Nagarajan Subramaniyan, Jeffrey Michael Dodson, Jack Regula