Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate (4, 5), a reversibly deformable bending element (8a) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element (8a). The transistor is arranged in an implanted active region pan (78a) that is made of a semiconductor material of a first conducting type and is introduced in the bending element (8a). Two mutually spaced, implanted drain and source regions (79, 80) made of a semiconductor material of a second conducting type are designed in the active region pan (78a), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions (79, 80). The upper face of the active region pan (78a) is covered by a gate oxide (81a).

Abstract: The microelectromechanical component has a semiconductor substrate (1), which has a cavity (2a) formed in the semiconductor substrate. The cavity is covered by a reversibly deformable membrane (2). A sensor (17) for detecting a deformation of the membrane (2) is formed within the region of the membrane (2). A test actuator (28, 29, 30) for deforming the membrane (2) for testing purposes is also arranged within the region of the membrane (2). Finally, the microelectromechanical component has an evaluation and activation unit (41) connected to the sensor (17) and the test actuator (28, 29, 30) for activating the test actuator (28, 29, 30) in order to deform the membrane (2) as a test and for evaluating a measurement signal of the sensor (17) as a sensor detection of a deformation of the membrane (2) as a result of the activation of the test actuator (28, 29, 30).

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate (4, 5), a reversibly deformable bending element (8a) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element (8a). The transistor is arranged in an implanted active region pan (78a) that is made of a semiconductor material of a first conducting type and is introduced in the bending element (8a). Two mutually spaced, implanted drain and source regions (79, 80) made of a semiconductor material of a second conducting type are designed in the active region pan (78a), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions (79, 80). The upper face of the active region pan (78a) is covered by a gate oxide (81a).

Abstract: A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

Abstract: The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter.

Abstract: The microelectromechanical component has a semiconductor substrate (1), which has a cavity (2a) formed in the semiconductor substrate. The cavity is covered by a reversibly deformable membrane (2). A sensor (17) for detecting a deformation of the membrane (2) is formed within the region of the membrane (2). A test actuator (28, 29, 30) for deforming the membrane (2) for testing purposes is also arranged within the region of the membrane (2). Finally, the microelectromechanical component has an evaluation and activation unit (41) connected to the sensor (17) and the test actuator (28, 29, 30) for activating the test actuator (28, 29, 30) in order to deform the membrane (2) as a test and for evaluating a measurement signal of the sensor (17) as a sensor detection of a deformation of the membrane (2) as a result of the activation of the test actuator (28, 29, 30).

Abstract: A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

Abstract: The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter.

Abstract: A telephone call processing method comprising the steps of: (i) receiving a telephone call for transfer to a first telephone number; (ii) determining whether the first telephone number has been set to divert calls to a second telephone number; and (iii) processing the call in dependence upon the determination of step (ii).

Abstract: A telephone call processing method comprising the steps of: (i) receiving a telephone call for transfer to a first telephone number; (ii) determining whether the first telephone number has been set to divert calls to a second telephone number; and (iii) processing the call in dependence upon the determination of step (ii).