Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: Described herein is a ruggedized wafer level microelectromechanical (“MEMS”) force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A system and method for providing a chip scale package of a MEMS device are disclosed. The system is a chip scale package (CSP) that comprises a substrate, a cap substrate, a MEMS device substrate bonded to and located between both the substrate and the cap substrate, at least one solder ball, and a via support structure coupled to both the at least one solder ball and the substrate, wherein the MEMS device substrate and the cap substrate are mechanically isolated from the at least one solder ball. The method comprises coupling a MEMS device substrate to a cap substrate, forming at least one insulated via through both the MEMS device substrate and the cap substrate, providing singulation of the cap substrate to provide a via support structure that surrounds the at least one insulated via, and coupling at least one solder ball to the via support structure.

Abstract: A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.

Abstract: The present disclosure describes an optical displacement sensor having a dense multi-axis array of photosensitive elements. Generally, the sensor includes a two dimensional array of multiple photosensitive elements. In one embodiment, the array includes multiple linear arrays of photosensitive elements arranged along three or more axes in a space-filling, close-packed multi-axis array. The photosensitive elements are connected to each other in such a way that motion is determinable along each of the axes by measuring differential photocurrents between photosensitive elements along each of the axes. The inventive architecture advantageously increases signal redundancy, and reduces signal drop-out or low signals due to random fluctuations in the incident or absorbed light or in the signals from the photosensitive elements.

Abstract: A modulator for modulating an incident beam of light. The modulator includes a plurality of elements, each element including a first end, a second end, a first non-linear side, a second non-linear side, and a light reflective planar surface. The light reflective planar surfaces of the plurality of elements lie in one or more parallel planes. The elements are preferably arranged parallel to each other. The modulator also includes a support structure to maintain a position of each element relative to each other and to enable movement of selective ones of the plurality of elements in a direction normal to the one or more parallel planes of the plurality of elements. The plurality of elements are preferably moved between a first modulator configuration wherein the plurality of elements act to reflect the incident beam of light as a plane mirror, and a second modulator configuration wherein the plurality of elements act to diffract the incident beam of light.

Abstract: A modulator for modulating an incident beam of light. The modulator includes a plurality of elements, each element including a first end, a second end, a first linear side, a second linear side, and a continuous or non-continuous light reflective planar surface plurality of elements are arranged parallel to each other and further wherein the light reflective planar surface of each of the plurality of elements includes a first non-linear side and a second non-linear side. The modulator also includes a support structure coupled to each end of the plurality of elements to enable movement between a first modulator configuration wherein the plurality of elements act to reflect the incident beam of light as a plane mirror, and a second modulator configuration wherein the plurality of elements act to diffract the incident beam of light.

Abstract: Energy is applied to a portion of a conducting body. In preferred embodiments, relative motion between the conducting body and the energy source is created such that the energy source moves along a thermal diffusion front, thereby enhancing the thermal diffusion front in the direction of the relative movement. The energy is preferably applied in a portion of the conducting body with higher thermal mass and the enhanced thermal diffusion front is directed toward a portion with lower thermal mass. The lower thermal mass portion expands, thereby creating fissures in surrounding material, then melts, flows through the fissures and contacts another conductor, thereby forming a conductive link.

Abstract: Energy is applied to a portion of a conducting body. In preferred embodiments, relative motion between the conducting body and the energy source is created such that the energy source moves along a thermal diffusion front, thereby enhancing the thermal diffusion front in the direction of the relative movement. The energy is preferably applied in a portion of the conducting body with higher thermal mass and the enhanced thermal diffusion front is directed toward a portion with lower thermal mass. The lower thermal mass portion expands, thereby creating fissures in surrounding material, then melts, flows through the fissures and contacts another conductor, thereby forming a conductive link.

Abstract: A method and device for forming metal capacitor and integrated coaxial lines using energy transfer so as to form conductive links among conductors. Conductors are embedded within nonconductive layers, such that the conductors form a matrix of at least three levels. A source of energy is directed at the layers, such that at least one conductor is wholly shielded by at least one other conductor, and conductive paths form so that a conductor becomes shielded by the paths. Particular conductive path formation is encouraged by use of: differing surface areas of conductors; diffusion barriers to increase relative energy absorption; varied relative distances among conductors; some conductors having a lower melting point than other conductors; directing the energy to conductors in a particular order; or combinations thereof. In one variation, links among differing layers are formed using more than one energy source or sequentially generated and directed pulses of energy.