Abstract: A method of operating a solid-state relay device includes receiving an input signal at an input of the solid-state relay device and coupling the input signal to transmit circuitry disposed on a transmit die. In response to receiving the input signal the transmit circuitry generates a corresponding time varying electrical voltage that is coupled from the transmit circuitry to a transmit coil and a receive coil is induced to generate an intermediate signal. A switch drive signal is generated which transitions a solid-state switch from an off state to an on state, wherein the switch drive signal corresponds to the input signal and wherein the drive signal is electrically isolated from the input signal.

Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

Abstract: A signal isolation device comprises a transmit die including a pair of input terminals coupled to a pair of transmitter output terminals. A receiver die includes a pair of receiver input terminals, a pair of output terminals and a coupler region, wherein the transmit die is attached to a top surface of the receiver die. The coupler region includes a transmit coil connected to the pair of transmitter output terminals, a receiver coil positioned proximate the transmit coil and connected to the pair of output terminals, receiver circuitry and a shield layer positioned between the receiver circuitry and the receiver coil.

Abstract: A method of operating a signal isolation device includes receiving an input signal at an input of a transmit die and in response, generating a corresponding time varying electrical voltage at a transmitter output of the transmit die. The time varying electrical voltage is coupled to a transmit coil disposed within a receiver die. A receive coil is induced to generate an intermediate signal in response to the coupling of the time varying electrical voltage to the transmit coil, wherein the intermediate signal corresponds to the input signal. The intermediate signal is coupled to receiver circuitry disposed within the receiver die. Electromagnetic noise generated by the receive coil is shielded from the receiver circuitry via a shield positioned between the receive coil and the receiver circuitry.

Abstract: A solid-state relay device includes a transistor die, a transmitter die including a pair of input terminals coupled to a pair of transmitter output terminals and a receiver die including a pair of receiver input terminals, a pair of output terminals and a coupler region. The transmitter die is attached to a top surface of the receiver die, wherein at least one output terminal of the pair of output terminals is attached to a gate terminal of the transistor die. The coupler region includes: a transmit coil connected to the pair of receiver input terminals; a receiver coil positioned proximate the transmit coil and connected to the pair of output terminals; receiver circuitry; and a shield layer positioned between the receiver circuitry and the receiver coil.

Abstract: A method of operating a solid-state relay device includes receiving an input signal at an input of the solid-state relay device and coupling the input signal to transmit circuitry disposed on a transmit die. In response to receiving the input signal the transmit circuitry generates a corresponding time varying electrical voltage that is coupled from the transmit circuitry to a transmit coil and a receive coil is induced to generate an intermediate signal. A switch drive signal is generated which transitions a solid-state switch from an off state to an on state, wherein the switch drive signal corresponds to the input signal and wherein the drive signal is electrically isolated from the input signal.

Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: Described herein is a ruggedized wafer level microelectromechanical (“MEMS”) force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A system and method for providing a chip scale package of a MEMS device are disclosed. The system is a chip scale package (CSP) that comprises a substrate, a cap substrate, a MEMS device substrate bonded to and located between both the substrate and the cap substrate, at least one solder ball, and a via support structure coupled to both the at least one solder ball and the substrate, wherein the MEMS device substrate and the cap substrate are mechanically isolated from the at least one solder ball. The method comprises coupling a MEMS device substrate to a cap substrate, forming at least one insulated via through both the MEMS device substrate and the cap substrate, providing singulation of the cap substrate to provide a via support structure that surrounds the at least one insulated via, and coupling at least one solder ball to the via support structure.

Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

Abstract: A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.