Abstract: A system and method are provided for detectability analysis to identify defective analog components of a circuit. The method includes applying detectability analysis stimuli to the circuit for the purpose of identifying all detectable defects within a defect universe of the circuit, the defect universe including all actual, and potentially undetectable, defects in the circuit, and the applying resulting in an identification of first defects, which is a subset of all of the actual defects within the defect universe. The method further includes applying a user defect analysis to the circuit to identify second defects, which is a subset of all of the actual defects within the defect universe, determining defects, from the first defects, that are not included in the second defects to be not-covered (NC) defects, grouping the NC defects into clusters, and providing the grouped NC defects as a result of the defect detectability analysis.

Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: A method of simulating defects in an analog circuit design includes, in part, defining a multitude of defect models, defining a defect scope associated with the defect models, and compiling, by a processor, the defect models, the defect scope, and a netlist associated with the analog circuit design. The method further includes, in part, scanning the netlist to identify a multitude of nodes to which a multitude of defects defined by the defect models and the defect scope are applied, injecting the multitude of defects at the identified nodes, and simulating the analog circuit design using the injected defects.

Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: A method of simulating defects in an analog circuit design includes, in part, defining a multitude of defect models, defining a defect scope associated with the defect models, and compiling, by a processor, the defect models, the defect scope, and a netlist associated with the analog circuit design. The method further includes, in part, scanning the netlist to identify a multitude of nodes to which a multitude of defects defined by the defect models and the defect scope are applied, injecting the multitude of defects at the identified nodes, and simulating the analog circuit design using the injected defects.

Abstract: In modern VLSI technology, often, stacked arrays of smaller sized MOSFETs are used to achieve the desired width and length of a design MOSFET. In analog defect simulation, each physical transistor can contribute to the circuit's defect universe and this can directly lead to tremendous increase in defect simulation time. Here we propose a method of finding equivalent defects in the context of stacked MOSFET arrays that can lead to significant reduction in defect simulation effort and yet provide accurate defect coverage results.

Abstract: The present invention relates to a method of controlling light diffusion and/or glare from a surface, in particular from a reflective back plane. It furthermore relates to a display with controlled light diffusion and to the use of a nanoparticle film for controlling light diffusion and/or glare from a surface.

Abstract: The invention relates to a porous film for use in an electronic device, uses of such a porous film, a method of producing a porous film and a porous film produced by said method.