Patents by Inventor Michael E. Gershenson

Michael E. Gershenson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field-effect transistors with weakly coupled layered inorganic semiconductors
    Patent number: 7670887
    Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
    Type: Grant
    Filed: April 4, 2007
    Date of Patent: March 2, 2010
    Assignees: Alcatel-Lucent USA Inc., Rutgers, The State University of New Jersey
    Inventors: Ernst Bucher, Michael E. Gershenson, Christian Kloc, Vitaly Podzorov
  • Field-effect transistors with weakly coupled layered inorganic semiconductors
    Patent number: 7361929
    Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
    Type: Grant
    Filed: April 4, 2007
    Date of Patent: April 22, 2008
    Assignees: Lucent Technologies Inc.
    Inventors: Ernst Bucher, Michael E. Gershenson, Christian Kloc, Vitaly Podzorov
  • Field-effect transistors with weakly coupled layered inorganic semiconductors
    Patent number: 7242041
    Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
    Type: Grant
    Filed: September 13, 2004
    Date of Patent: July 10, 2007
    Assignees: Lucent Technologies Inc., Rutgers, The State University of New Jersey
    Inventors: Ernst Bucher, Michael E. Gershenson, Christian Kloc, Vitaly Podzorov