Patents by Inventor Michael E. Givens
Michael E. Givens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10854444Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: January 27, 2020Date of Patent: December 1, 2020Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Publication number: 20200266054Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: January 27, 2020Publication date: August 20, 2020Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Patent number: 10566223Abstract: Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing too including a first process module and a second process module.Type: GrantFiled: May 17, 2017Date of Patent: February 18, 2020Assignee: ASM IP Holdings B.V.Inventors: Keith R. Lawson, Michael E. Givens
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Patent number: 10553424Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: January 22, 2019Date of Patent: February 4, 2020Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Publication number: 20190259605Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: January 22, 2019Publication date: August 22, 2019Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Patent number: 10199213Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: July 17, 2017Date of Patent: February 5, 2019Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Publication number: 20180068846Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: July 17, 2017Publication date: March 8, 2018Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Patent number: 9911676Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.Type: GrantFiled: January 3, 2017Date of Patent: March 6, 2018Assignee: ASM IP Holding B.V.Inventors: Fu Tang, Michael E. Givens, Qi Xie, Xiaoqiang Jiang, Petri Raisanen, Pauline Calka
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Patent number: 9905492Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.Type: GrantFiled: January 3, 2017Date of Patent: February 27, 2018Assignee: ASM IP Holding B.V.Inventors: Fu Tang, Michael E. Givens, Qi Xie, Petri Raisanen
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Publication number: 20170256429Abstract: Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing tool including a first process module and a second process module.Type: ApplicationFiled: May 17, 2017Publication date: September 7, 2017Inventors: Keith R. Lawson, Michael E. Givens
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Patent number: 9721786Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: January 11, 2016Date of Patent: August 1, 2017Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Patent number: 9659799Abstract: Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing tool including a first process module and a second process module.Type: GrantFiled: August 28, 2012Date of Patent: May 23, 2017Assignee: ASM IP Holding B.V.Inventors: Keith R. Lawson, Michael E. Givens
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Publication number: 20170117203Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.Type: ApplicationFiled: January 3, 2017Publication date: April 27, 2017Inventors: Fu Tang, Michael E. Givens, Qi Xie, Petri Raisanen
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Publication number: 20170117202Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.Type: ApplicationFiled: January 3, 2017Publication date: April 27, 2017Inventors: Fu Tang, Michael E. Givens, Qi Xie, Xiaoqiang Jiang, Petri Raisanen, Pauline Calka
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Publication number: 20160203974Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: January 11, 2016Publication date: July 14, 2016Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Publication number: 20140067110Abstract: Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing tool including a first process module and a second process module.Type: ApplicationFiled: August 28, 2012Publication date: March 6, 2014Applicant: ASM IP Holding B.V.Inventors: Keith R. Lawson, Michael E. Givens
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Patent number: 7790556Abstract: Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes, aid in reducing hydrogen content for a given deposition rate.Type: GrantFiled: June 9, 2005Date of Patent: September 7, 2010Assignee: ASM America, Inc.Inventors: Christophe F. Pomarede, Michael E. Givens, Eric J. Shero, Michael A. Todd
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Patent number: 7122085Abstract: Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.Type: GrantFiled: July 29, 2003Date of Patent: October 17, 2006Assignee: ASM America, Inc.Inventors: Eric J. Shero, Michael E. Givens, Ryan Schmidt
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Patent number: 7026219Abstract: Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes aid in reducing hydrogen content for a given deposition rate.Type: GrantFiled: February 11, 2002Date of Patent: April 11, 2006Assignee: ASM America, Inc.Inventors: Christophe F. Pomarede, Michael E. Givens, Eric J. Shero, Michael A. Todd
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Publication number: 20020173130Abstract: Methods are provided herein for forming electrode layers over high dielectric constant (high k) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes aid in reducing hydrogen content for a given deposition rate.Type: ApplicationFiled: February 11, 2002Publication date: November 21, 2002Inventors: Christophe F. Pomerede , Michael E. Givens , Eric J. Shero , Michael A. Todd