Patents by Inventor Michael E. Haslam

Michael E. Haslam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240169176
    Abstract: Disclosed herein are Flexible Radio Beacons and Flexible Delivery Structures for asset and inventory identification and management. The Flexible Radio Beacon is dormant until activated at time of use. The Flexible Radio Beacon has optional activation means and can be activated physically or electronically. The Flexible Radio Beacon and Flexible Delivery Structures make a flexible radio frequency (RF) tag useful for asset tracking. Disclosed herein is a method for using Flexible Radio Beacons and Flexible Delivery Structures in flexible RF tags for asset and inventory identification and management. Disclosed herein is a system for asset and inventory identification and management using Flexible Radio Beacons and Flexible Delivery Structures in flexible RF tags.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 23, 2024
    Applicant: Apptricity Corporation
    Inventors: Michael E. Haslam, Salman Farooqui, Tim Garcia
  • Patent number: 11915081
    Abstract: Disclosed herein are Flexible Radio Beacons and Flexible Delivery Structures for asset and inventory identification and management. The Flexible Radio Beacon is dormant until activated at time of use. The Flexible Radio Beacon has optional activation means and can be activated physically or electronically. The Flexible Radio Beacon and Flexible Delivery Structures make a flexible radio frequency (RF) tag useful for asset tracking. Disclosed herein is a method for using Flexible Radio Beacons and Flexible Delivery Structures in flexible RF tags for asset and inventory identification and management. Disclosed herein is a system for asset and inventory identification and management using Flexible Radio Beacons and Flexible Delivery Structures in flexible RF tags.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: February 27, 2024
    Assignee: Apptricity Corporation
    Inventors: Michael E. Haslam, Salman Farooqui, Tim Garcia
  • Patent number: 11770152
    Abstract: Disclosed herein is a Radio Frequency Location and/or Proximity Beacon receiver/transmitter with one or more tunable antennas and power levels and having the capability for cloud integration. Disclosed herein is a communication system utilizing a Radio Frequency Location and/or Proximity Beacon receiver/transmitter with one or more tunable antennas and power levels and having the capability for cloud integration. The communication system supports processing of communications regarding a radio frequency (RF) beacon for tracking location and/or proximity of field assets. Disclosed herein is a method of using a Radio Frequency Location and/or Proximity Beacon receiver/transmitter with one or more tunable antennas and power levels and having the capability for cloud integration. The method transmits communications regarding a radio frequency beacon for tracking location and/or proximity of field assets.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: September 26, 2023
    Assignee: Apptricity Corporation
    Inventors: Michael E. Haslam, Weimin Peng
  • Publication number: 20220352919
    Abstract: Disclosed herein is a Radio Frequency Location and/or Proximity Beacon receiver/transmitter with one or more tunable antennas and power levels and having the capability for cloud integration. Disclosed herein is a communication system utilizing a Radio Frequency Location and/or Proximity Beacon receiver/transmitter with one or more tunable antennas and power levels and having the capability for cloud integration. The communication system supports processing of communications regarding a radio frequency (RF) beacon for tracking location and/or proximity of field assets. Disclosed herein is a method of using a Radio Frequency Location and/or Proximity Beacon receiver/transmitter with one or more tunable antennas and power levels and having the capability for cloud integration. The method transmits communications regarding a radio frequency beacon for tracking location and/or proximity of field assets.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 3, 2022
    Applicant: Apptricity Corporation
    Inventors: Michael E. Haslam, Weimin Peng
  • Publication number: 20220327342
    Abstract: Disclosed herein are Flexible Radio Beacons and Flexible Delivery Structures for asset and inventory identification and management. The Flexible Radio Beacon is dormant until activated at time of use. The Flexible Radio Beacon has optional activation means and can be activated physically or electronically. The Flexible Radio Beacon and Flexible Delivery Structures make a flexible radio frequency (RF) tag useful for asset tracking. Disclosed herein is a method for using Flexible Radio Beacons and Flexible Delivery Structures in flexible RF tags for asset and inventory identification and management. Disclosed herein is a system for asset and inventory identification and management using Flexible Radio Beacons and Flexible Delivery Structures in flexible RF tags.
    Type: Application
    Filed: October 20, 2020
    Publication date: October 13, 2022
    Applicant: Apptricity Corporation
    Inventors: Michael E. Haslam, Salman Farooqui, Tim Garcia
  • Patent number: 8339197
    Abstract: Matched bipolar transistor pairs for use in differential transistor pair circuitry, current mirror transistor pair circuitry and voltage reference transistor pair circuitry are disclosed. Each transistor in the pair includes a base, emitter and a collector region and a doped polysilicon emitter contact, a metal emitter contact and an metal emitter interconnect which makes an electrical connection to the emitter region by way of the metal emitter contact and the polysilicon emitter contact. The metal emitter interconnect is displaced latterly away from the emitter region so that no part of the metal emitter interconnect overlies any portion of the emitter region.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: December 25, 2012
    Assignee: National Semiconductor Corporation
    Inventors: Kwok-Fu Chiu, Yih-Chyi Chong, Michael E. Haslam
  • Publication number: 20120139634
    Abstract: Matched bipolar transistor pairs for use in differential transistor pair circuitry, current mirror transistor pair circuitry and voltage reference transistor pair circuitry are disclosed. Each transistor in the pair includes a base, emitter and a collector region and a doped polysilicon emitter contact, a metal emitter contact and an metal emitter interconnect which makes an electrical connection to the emitter region by way of the metal emitter contact and the polysilicon emitter contact. The metal emitter interconnect is displaced latterly away from the emitter region so that no part of the metal emitter interconnect overlies any portion of the emitter region.
    Type: Application
    Filed: December 2, 2010
    Publication date: June 7, 2012
    Inventors: Kwok-Fu Chiu, Yih-Chyi Chong, Michael E. Haslam
  • Patent number: 5593920
    Abstract: A structure and method for forming contact structures in integrated circuits. A buffer layer is formed over an underlying conductive element. A first conductive layer is then deposited over the buffer layer and patterned to define a first interconnect layer. While the first interconnect layer is patterned, the buffer layer protects the underlying conductive element from damage. Portions of the buffer layer which are not covered by the first interconnect layer are then removed, and a second conductive layer is deposited over the integrated circuit. The second conductive layer is then anisotropically etched to form conductive sidewall spacers alongside the vertical sidewalls of the first interconnect layer, where at least one of the conductive sidewall spacers makes electrical contact with the underlying conductive element. Therefore, a conductive contact is made between the underlying conductive element and the first interconnect layer through at least one of the conductive sidewall spacers.
    Type: Grant
    Filed: April 12, 1994
    Date of Patent: January 14, 1997
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Michael E. Haslam, Charles R. Spinner, III
  • Patent number: 5331116
    Abstract: A structure and method for forming contact structures in integrated circuits. A buffer layer is formed over an underlying conductive element. A first conductive layer is then deposited over the buffer layer and patterned to define a first interconnect layer. While the first interconnect layer is patterned, the buffer layer protects the underlying conductive element from damage. Portions of the buffer layer which are not covered by the first interconnect layer are then removed, and a second conductive layer is deposited over the integrated circuit. The second conductive layer is then anisotropically etched to form conductive sidewall spacers alongside the vertical sidewalls of the first interconnect layer, where at least one of the conductive sidewall spacers makes electrical contact with the underlying conductive element. Therefore, a conductive contact is made between the underlying conductive element and the first interconnect layer through at least one of the conductive sidewall spacers.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: July 19, 1994
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Michael E. Haslam, Charles R. Spinner, III
  • Patent number: 5321211
    Abstract: A structure and method for forming contact vias in integrated circuits. An interconnect layer is formed on an underlying layer in an integrated circuit. A buffer region is then formed adjacent to the interconnect layer, followed by forming an insulating layer over the integrated circuit. Preferably, the insulating layer is made of a material which is selectively etchable over the material in the buffer region. A contact via is then formed through the insulating layer to expose a portion of the interconnect layer. During formation of the contact via, the buffer region acts as an etch stop and protects the underlying layer. The buffer region also ensures a reliable contact will be made in the event of an error in contact via placement.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: June 14, 1994
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Michael E. Haslam, Charles R. Spinner, III