Abstract: A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Abstract: A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as “undoped layers”). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

Abstract: Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.

Abstract: A method, apparatus, system, and device provide the ability to form one or more solder bumps on one or more materials. The solder bumps are reflowed. During the reflowing, the solder bumps are monitored in real time. The reflow is controlled in real time, thereby controlling a morphology of each of the solder bumps. Further, the wetting of the solder bumps to a surface of the materials is controlled in real time.

Abstract: Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Abstract: Apparatuses and methods are disclosed that create a synthetic fovea in order to identify and highlight interesting portions of an image for further processing and rapid response. Synthetic foveal imaging implements a parallel processing architecture that uses reprogrammable logic to implement embedded, distributed, real-time foveal image processing from different sensor types while simultaneously allowing for lossless storage and retrieval of raw image data. Real-time, distributed, adaptive processing of multi-tap image sensors with coordinated processing hardware used for each output tap is enabled. In mosaic focal planes, a parallel-processing network can be implemented that treats the mosaic focal plane as a single ensemble rather than a set of isolated sensors. Various applications are enabled for imaging and robotic vision where processing and responding to enormous amounts of data quickly and efficiently is important.

Abstract: A nanofeature particulate trap comprising a plurality of densely packed nanofeatures, such as nanotubes, and a particulate detector incorporating the nanofeature particulate trap are provided. A method of producing a nanotrap structure alone or integrated with a particulate detector is also provided.

Abstract: A tunable nanomechanical oscillator device and system is provided. The nanomechanical oscillator device comprising at least one nanoresonator, such as a suspended nanotube, designed such that injecting charge density into the tube (e.g. by applying a capacitively-cuopled voltage bias) changes the resonant frequency of the nanotube, and where exposing the resonator to an RF bias induces oscillitory movement in the suspended portion of the nanotube, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing an oriented nanoscale resonator structure with integrated electrodes is also provided.

Abstract: A nanomechanical actuator/oscillator device and system are provided. The nanomechanical actuator/oscillator device comprising nanobimorphs, such as nanotubes, designed such that inducing a difference in charge density between the tubes (e.g. by biasing one tube positive with respect to the other with sufficient tube-to-tube contact resistance) induces lateral movement in the end of the bimorph, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing a novel nanobimorph structure with integrated electrodes is also provided.

Abstract: A tunable nanomechanical resonator system comprising an array of nanofeatures, such as nanotubes, where the nanofeatures are in signal communication with means for inducing a difference in charge density in the nanofeature such that the mechanical resonant frequency of the nanofeature can be tuned, and where the nanofeature is in signal communication with a waveguide or other RF bias conduit such that an RF signal having a frequency corresponding to the mechanical resonant frequency of the array will couple to the array thereby inducing resonant motion in the array of nanofeatures, and subsequently coupling to an output waveguide, forming a nanoscale RF filter is provided. A method of producing a nanoscale RF filter structure controllably positioned and oriented with a waveguide and integrated electrodes is also provided.

Abstract: A device for utilizing a non-gel self-assembled nano-feature array molecular sieve for analyzing molecules is provided. The molecular sieve device comprises an ordered array of self-assembled nano-features which function as a molecular sieve to separate molecules based on a suitable characteristic. A system for integrating the non-gel ordered self-assembled nano-feature array molecular sieve of this invention into a device for separating molecules based on a characteristic and a method for separating a wide range of molecules using the non-gel ordered self-assembled nano-feature array molecular sieve of the invention are also provided.

Abstract: A device for utilizing a non-gel self-assembled nano-feature array molecular sieve for analyzing molecules is provided. The molecular sieve device comprises an ordered array of self-assembled nano-features which function as a molecular sieve to separate molecules based on a suitable characteristic. A system for integrating the non-gel ordered self-assembled nano-feature array molecular sieve of this invention into a device for separating molecules based on a characteristic and a method for separating a wide range of molecules using the non-gel ordered self-assembled nano-feature array molecular sieve of the invention are also provided.

Abstract: A nanomechanical actuator/oscillator device and system are provided. The nanomechanical actuator/oscillator device comprising nanobimorphs, such as nanotubes, designed such that inducing a difference in charge density between the tubes (e.g. by biasing one tube positive with respect to the other with sufficient tube-to-tube contact resistance) induces lateral movement in the end of the bimorph, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing a novel nanobimorph structure with integrated electrodes is also provided.

Abstract: A tunable nanomechanical resonator system comprising an array of nanofeatures, such as nanotubes, where the nanofeatures are in signal communication with means for inducing a difference in charge density in the nanofeature such that the mechanical resonant frequency of the nanofeature can be tuned, and where the nanofeature is in signal communication with a waveguide or other RF bias conduit such that an RF signal having a frequency corresponding to the mechanical resonant frequency of the array will couple to the array thereby inducing resonant motion in the array of nanofeatures, and subsequently coupling to an output waveguide, forming a nanoscale RF filter is provided. A method of producing a nanoscale RF filter structure controllably positioned and oriented with a waveguide and integrated electrodes is also provided.

Abstract: A tunable nanomechanical oscillator device and system is provided. The nanomechanical oscillator device comprising at least one nanoresonator, such as a suspended nanotube, designed such that injecting charge density into the tube (e.g. by applying a capacitively-cuopled voltage bias) changes the resonant frequency of the nanotube, and where exposing the resonator to an RF bias induces oscillitory movement in the suspended portion of the nanotube, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing an oriented nanoscale resonator structure with integrated electrodes is also provided.

Abstract: The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.

Abstract: A dewpoint/frostpoint hygrometer that uses a surface moisture-sensitive sensor as part of an RF oscillator circuit with feedback control of the sensor temperature to maintain equilibrium at the sensor surface between ambient water vapor and condensed water/ice. The invention is preferably implemented using a surface acoustic wave (SAW) device in an RF oscillator circuit configured to generate a condensation-dependent output signal, a temperature sensor to measure the temperature of the SAW device and to distinguish between condensation-dependent and temperature-dependent signals, a temperature regulating device to control the temperature of the SAW device, and a feedback control system configured to keep the condensation-dependent signal nearly constant over time in the presence of time-varying humidity, corrected for temperature.

Abstract: The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Abstract: The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip.

Abstract: An improved cathodoluminescence light collection system for use in electron microscopes provides an optical fiber, the facet or aperture of which is positioned adjacent the sample. The cathodoluminescence light, collected by the optical fiber in this manner, may be used to provide spectrally resolved cathodoluminescence images of the sample as well as local cathodoluminescence spectra of the type available in prior art cathodoluminescence light collection systems, but without incurring the numerous disadvantages of such prior art light collection systems. The present invention is relatively inexpensive, far easier to maintain because it does not require use of a mirror and, it is more compact in size thereby making it compatible with the physical limitations of more electron microscopes.