Abstract: A bipolar radio frequency (RF) integrated circuit having a functional equivalent of a PIN diode. The RF integrated circuit includes a low frequency lateral PNP transistor having an emitter having a P+ region, a collector having a P+ region, a base having an N+ region and an N region having a current dependent stored charge having a relatively low level when no current is flowing between the emitter and a junction connecting the base and collector. An RF resistance between the emitter and the junction is controlled by a bias applied from the emitter to the junction. By varying the bias, the low frequency lateral PNP transistor from the emitter to the junction is used as a variable RF resistor or as an RF signal carrying component in a variable attenuator or RF switch.