Patents by Inventor Michael E. Walsh

Michael E. Walsh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanocrystal structures
    Patent number: 8121162
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: February 21, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • TECHNIQUES FOR DELIVERING THIRD PARTY UPDATES
    Publication number: 20090288071
    Abstract: Various technologies and techniques are disclosed for receiving and distributing updates for third party customers to end users. Input is received from a customer to login to a software update system. A software update is received from the customer. Metadata describing the software update is received from the customer. The software update is optionally validated to confirm that the software update can be trusted by end users who have a software program that could be updated with the software update. The software update is made available to update systems running on computers of end users after receiving the customer consent to the release of the software update.
    Type: Application
    Filed: May 13, 2008
    Publication date: November 19, 2009
    Applicant: MICROSOFT CORPORATION
    Inventors: David L. Seidman, Chika P. Ekeji, Michael E. Walsh, JR.
  • Nanocrystal structures
    Publication number: 20090253224
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Application
    Filed: November 21, 2008
    Publication date: October 8, 2009
    Applicant: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Nanocrystal structures
    Patent number: 7470473
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: December 30, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Nanocrystal structures
    Patent number: 7150910
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: December 19, 2006
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Nanocrystal structures
    Publication number: 20040004982
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Application
    Filed: November 15, 2002
    Publication date: January 8, 2004
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Easy opening gable top carton and blank therefor
    Patent number: 5014854
    Abstract: A gable top carton is provided with a flat top wall to facilitate stacking of the carton during storage and transportation. The carton is formed from a single blank of paperboard material provided with an array of score lines to facilitate the folding of various panels formed thereon into the erected carton. The top wall of the flat topped carton includes arrays of perforations disposed therein to define an integral tear strip that is selectively separable from the remainder of the carton. Removal of the tear strip enables panels of the top wall to be rotated upwardly and away from one another to define a unitary pour spout. The pour spout may be repeatedly closed and reopened to provide access to the pourable material as needed.
    Type: Grant
    Filed: July 5, 1990
    Date of Patent: May 14, 1991
    Assignee: Champion International Corporation
    Inventors: Nestor A. Anderson, Michael E. Walsh