Abstract: Solid-state electrochemical cells are disclosed. In examples, the cell comprises a sintered cathode layer, an electrolyte layer, an anode layer arranged on at least part of the electrolyte layer, an anode current collector, and a cathode current collector. The sintered cathode layer comprises side surfaces having portions which extend in planes oblique to the plane in which the top and/or bottom surfaces of the sintered cathode layer extend. The electrolyte layer is arranged on at least one of these portions; the cathode current collector is arranged on at least another of these portions.

Abstract: Methods for manufacturing an energy storage device. Such methods comprise providing a first stack on a first side of a substrate and a second stack on a second side of the substrate, opposite to the first side of the substrate. In examples, a first and third groove are formed in the first stack, with different depths than each other, and a second and fourth groove are formed in the second stack, with different depths than each other. In other examples, a first groove is formed in the first stack and a second groove is formed in the second stack, in substantial alignment with the first groove but with a different depth than the first groove.

Abstract: A method comprising providing, on a substrate, a stack for an energy storage device, the stack comprising a first electrode layer, a second electrode layer, and an electrolyte layer between the first electrode layer and the second electrode layer. A groove is formed at least through the second electrode layer and the electrolyte layer such that the groove is wider in the second electrode layer than in the electrolyte layer. An electrically insulating material is provided in the groove. An electrically conductive material is provided in the groove, on the electrically insulating material.

Abstract: A method for manufacturing an energy storage device. A stack is provided on a substrate. The stack comprises a first electrode layer, a second electrode layer, and an electrolyte layer between the first electrode layer and the second electrode layer. The method includes forming a first groove, a second groove, and a third groove in a first side of the stack opposite to a second side of the stack on the substrate. The first groove has a first depth and a first surface comprising a first exposed surface of the second electrode layer. The second groove has a second depth different from the first depth and a second surface comprising an exposed surface of the first electrode layer. The third groove has a third depth substantially the same as the first depth and a third surface comprising a second exposed surface of the second electrode layer.

Abstract: A method comprises obtaining a stack for an energy storage device, the stack comprising one or more layers: laser ablating the stack so as to form a cut through one or more of the layers, thereby producing one or more laser ablation products: and analysing, using a mass spectrometry-based analysis technique, the laser ablation products thereby to determine one or more characteristics of the stack. Also disclosed is an apparatus.

Abstract: A method comprises obtaining a stack for an energy storage device, the stack comprising a substrate, a first electrode layer, a second electrode layer, and an electrolyte layer between the first electrode layer and the second electrode layer. The method comprises laser ablating the stack to form a plurality of first grooves in the stack, each of the plurality of first grooves being through the first electrode layer and the electrolyte layer. The method comprises forming, in or on the stack, at least one registration feature, different from each of the plurality of first grooves. An apparatus and a stack for an energy storage device is also disclosed.

Abstract: A method of manufacturing an electronic component including a substrate is provided. The method includes generating a plasma remote from a sputter target, generating sputtered material from the sputter target using the plasma, and depositing the sputtered material on a substrate as a crystalline layer.

Abstract: An evaporator device incudes a crucible comprising an inlet through which solid material is introduced to the crucible, and an outlet through which vaporised material is released from the crucible. Vapours outgassed from molten material within the crucible are guided away from the outlet.

Abstract: A method of depositing a material on a substrate is provided. The method includes generating a plasma remote from one or more sputter targets suitable for plasma sputtering, wherein at least one distinct region of the one or more targets includes an alkali metal, alkaline earth metal, alkali metal containing compound, alkaline earth metal containing compound or a combination thereof; generating sputtered material from the target or targets using the plasma; and depositing the sputtered material on the substrate, the working distance between the target and the substrate being within +/?50% of the theoretical mean free path of the system.

Abstract: A method of manufacturing a crystalline layer of material on a surface, the crystalline layer including lithium, at least one transition metal and at least one counter-ion. The method includes the following steps: generating a plasma using a remote plasma generator, plasma sputtering material from a first target including lithium onto a surface of or supported by a substrate, there being at least a first plume corresponding to trajectories of particles from the first target onto the surface, and plasma sputtering material from a second target including at least one transition metal onto the surface, there being at least a second plume corresponding to trajectories of particles from the second target onto the surface. The first target is positioned to be non-parallel with the second target, the first plume and the second plume converge at a region proximate to the surface of or supported by the substrate, and the crystalline layer is formed on the surface at the region.

Abstract: A sputter deposition apparatus including: a plasma generation arrangement arranged to provide single plasma for sputter deposition of target material within a sputter deposition zone; a conveyor system arranged to convey a substrate through the sputter deposition zone in a conveyance direction; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate utilising the plasma such that as the substrate is conveyed through the sputter deposition zone in use there is deposited: a first stripe on the substrate; and a second stripe on the substrate. The first stripe includes at least one of: a different density of the target material or a different composition of the target material than the second stripe.

Abstract: Certain examples described herein relate to a sputter deposition apparatus including a guiding member to guide a substrate in a conveyance direction, a plasma source to generate a plasma, and a magnet arrangement. The magnet arrangement is configured to confine the plasma within the apparatus to a pre-treatment zone, within which the substrate is exposed to the plasma in use. The magnet arrangement is also configured to confine the plasma within the apparatus to a sputter deposition zone, located after the pre-treatment zone in the conveyance direction, to provide for sputter deposition of a target material to the substrate in use. The pre-treatment and sputter deposition zones are disposed about the guiding member.

Abstract: A sputter deposition apparatus including: a remote plasma generation arrangement arranged to provide a plasma for sputter deposition of target material within a sputter deposition zone; a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma in the sputter deposition zone a substrate provided within the sputter deposition zone; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate. The confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited: target material as a first region on the substrate; target material as a second region on the substrate; and an intermediate region between the first and second region with no target material.

Abstract: Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field includes magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.

Abstract: A sputter deposition apparatus including: a remote plasma generation arrangement arranged to provide a plasma for sputter deposition of target material within a sputter deposition zone; a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma in the sputter deposition zone a substrate provided within the sputter deposition zone; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate. The confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited: target material as a first region on the substrate; target material as a second region on the substrate; and an intermediate region between the first and second region including a blend of target materials.

Abstract: An apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate portion in which a substrate is provided and a target portion in which target material is provided, in use. The target portion and the substrate portion define between them a deposition zone. The apparatus includes an antenna arrangement for generating plasma, in use, and a confining arrangement. The confining arrangement includes a first element between the antenna arrangement and the deposition zone and a second element. The antenna arrangement is between the second element and the deposition zone. The first element confines the plasma towards the deposition zone to provide for sputter deposition of target material to the substrate, in use. The second element confines the plasma away from the second element, towards the antenna arrangement and, via the first element, towards the deposition zone, in use.

Abstract: A sputter deposition apparatus including: a substrate support assembly arranged to support a substrate; a target support assembly arranged to support at least one sputter target for use in a sputter deposition of a target material onto the substrate; a plasma generation arrangement arranged to provide plasma for said sputter deposition; and a cartridge arranged to contain the substrate with deposited target material after said sputter deposition. The cartridge is removable from the sputter deposition apparatus.

Abstract: Certain examples described herein relate to a sputter deposition apparatus including a substrate holder, a target loader, a plasma source to generate a plasma, and a magnet arrangement. The substrate holder is to position a substrate in a sputter deposition zone for sputter deposition of target material from a first target to the substrate in use. The target loader is to move a second target from a target priming zone into the sputter deposition zone for sputter deposition of target material from the second target to the substrate in use. The magnet arrangement configured to confine the plasma within the apparatus to the target priming zone and the sputter deposition zone. Within the target priming zone, a respective target is exposed to the plasma in use. The sputter deposition zone provides for sputter deposition of target material.

Abstract: A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.

Abstract: Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.