Abstract: A differential assembly includes a differential carrier (5) with a first carrier part (6) with a free first annular face (13) and a second carrier part (7) connectable to the first carrier part (6) and having a free second annular face (15), and a plurality of circumferentially distributed recesses (9) formed between the two carrier parts (6, 7); per carrier part (6, 7), a sideshaft gear (22, 23) is rotatably supported therein; and a supporting element (10) with journals (12) is held in the differential carrier (5). Each of the journals engages one of the recesses (9) of the differential carrier (5) and carries a differential gear (19) for driving the sideshaft gears (22, 23). The first and the second carrier part (7) are welded along a joining region formed between the two annular faces (13, 15) which is interrupted by the recesses (9) in the circumferential direction.

Abstract: The invention relates to a limited slip differential, more particularly for being used in the driveline of a motor vehicle. The limited slip differential 2 comprises a carrier element 3 which is rotatingly drivable around an axis of rotation A; a plurality of planetary gears 4 which rotate around the axis of rotation A together with the carrier element 3; a hollow gear 5 which is supported so as to be rotatable around the axis of rotation A and which engages at least some of the planetary gears 4; an adapter gear 7 which engages either the hollow gear 5 or the sun gear 6 via a toothed coupling 12 for the purpose of transmitting torque, and wherein the toothed coupling 12 comprises a first face toothing 14 at an end face of the adapter gear 7 and a second face toothing 13 at an end face of the gear engaging the adapter gear.

Abstract: The invention relates to a differential assembly in the form of a crown gear differential, more particularly for being used in the driveline of a motor vehicle. The differential assembly comprises a differential carrier (103) which is rotatingly drivable around an axis of rotation A; two sideshaft gears (112, 113) having crown gear teeth, which are rotatably held in the differential carrier (103) on the axis of rotation A and each comprise a circumferential supporting face (125, 126); differential gears (111) with spur gear teeth, which rotate jointly with the differential carrier (103) around the axis of rotation A and which engage the teeth of the sideshaft gears (112, 113) and each comprise a circumferential contact face (127); wherein the differential gears (111) are supported by means of their contact faces (127) against the supporting faces (125, 126) of the sideshaft gears (112, 113) towards the axis or rotation A.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: A double differential assembly having a first differential drive (3) with a differential carrier (5) drivable around an axis of rotation (A), a plurality of first differential gears (6) rotatably supported therein, as well as two output gears (7, 8) which are coaxially arranged relative to the axis of rotation (A) and engage the first differential gears (6). It also includes a second differential drive (4) with a cage element (22) which is firmly connected to one of the output gears (8) of the first differential drive (3) and is drivable thereby around the axis of rotation (A), a plurality of second differential gears (25) which are rotatably held in the cage element (22), and two sideshaft gears (26, 27) which are arranged coaxially relative to the axis of rotation (A) and engage the second differential gears (25). At least one of the two differential drives (3, 4) is a crown gear differential.

Abstract: A differential assembly (11) for being rotatably supported around a longitudinal axis (A) and for being rotatingly driven inside a housing, comprising a differential carrier (12) which comprises a base (13) at its first end and an aperture (14) at its second end; two sideshaft gears (21, 23) arranged coaxially relative to the longitudinal axis (A), as well as a plurality of a differential gears (25, 26, 27) in the differential carrier, each engaging the two sideshaft gears; an outer bearing seat (15) at the first end of the differential carrier (12) for sliding on a first rolling contact bearing (16) and an inner bearing seat (17) at the second end of the differential carrier (12) for inserting a second rolling contact bearing (18).

Abstract: A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.