Patents by Inventor Michael Eugen Givens

Michael Eugen Givens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming a semiconductor device and related semiconductor device structures
    Patent number: 10643904
    Abstract: Methods for forming a semiconductor device and related semiconductor device structures are provided. In some embodiments, methods may include forming an NMOS gate dielectric and a PMOS gate dielectric over a substrate and forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, methods may also include, removing the first work function metal over the NMOS gate dielectric and forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, related semiconductor device structures may include an NMOS gate dielectric and a PMOS gate dielectric disposed over a semiconductor substrate. A PMOS gate electrode may be disposed over the PMOS gate dielectric and the PMOS gate electrode may include a first work function metal disposed over the PMOS gate dielectric and a second work function metal disposed over the first work function metal.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: May 5, 2020
    Assignee: ASM IP Holdings B.V.
    Inventors: Qi Xie, Michael Eugen Givens, Petri Raisanen, Jan Willem Maes
  • METHODS FOR FORMING A SEMICONDUCTOR DEVICE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20180122709
    Abstract: Methods for forming a semiconductor device and related semiconductor device structures are provided. In some embodiments, methods may include forming an NMOS gate dielectric and a PMOS gate dielectric over a substrate and forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, methods may also include, removing the first work function metal over the NMOS gate dielectric and forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, related semiconductor device structures may include an NMOS gate dielectric and a PMOS gate dielectric disposed over a semiconductor substrate. A PMOS gate electrode may be disposed over the PMOS gate dielectric and the PMOS gate electrode may include a first work function metal disposed over the PMOS gate dielectric and a second work function metal disposed over the first work function metal.
    Type: Application
    Filed: October 27, 2017
    Publication date: May 3, 2018
    Inventors: Qi Xie, Michael Eugen Givens, Petri Raisanen, Jan Willem Maes