Patents by Inventor Michael Everett Babb

Michael Everett Babb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of electronic devices using sacrificial seed layers
    Patent number: 11799016
    Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: October 24, 2023
    Assignee: The Texas A&M University System
    Inventors: Michael Everett Babb, Harlan Rusty Harris
  • FABRICATION OF ELECTRONIC DEVICES USING SACRIFICIAL SEED LAYERS
    Publication number: 20220223719
    Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.
    Type: Application
    Filed: March 31, 2022
    Publication date: July 14, 2022
    Inventors: Michael Everett Babb, Harlan Rusty Harris
  • Fabrication of electronic devices using sacrificial seed layers
    Patent number: 11302800
    Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: April 12, 2022
    Assignee: The Texas A&M University System
    Inventors: Michael Everett Babb, Harlan Rusty Harris
  • FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
    Publication number: 20210376067
    Abstract: A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
    Type: Application
    Filed: August 12, 2021
    Publication date: December 2, 2021
    Inventors: Michael Everett Babb, Harlan Rusty Harris
  • Fabrication of lateral superjunction devices using selective epitaxy
    Patent number: 11121211
    Abstract: A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: September 14, 2021
    Assignee: The Texas A&M University System
    Inventors: Michael Everett Babb, Harlan Rusty Harris
  • FABRICATION OF ELECTRONIC DEVICES USING SACRIFICIAL SEED LAYERS
    Publication number: 20210083076
    Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.
    Type: Application
    Filed: February 21, 2019
    Publication date: March 18, 2021
    Inventors: Michael Everett Babb, Harlan Rusty Harris
  • FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
    Publication number: 20210036103
    Abstract: A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
    Type: Application
    Filed: September 28, 2018
    Publication date: February 4, 2021
    Inventors: Michael Everett Babb, Harlan Rusty Harris