Patents by Inventor Michael F. Crommie

Michael F. Crommie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Local doping of two-dimensional materials
    Patent number: 9449851
    Abstract: This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: September 20, 2016
    Assignee: The Regents of the University of California
    Inventors: Dillon Wong, Jairo Velasco, Jr., Long Ju, Salman Kahn, Juwon Lee, Chad E. Germany, Alexander K. Zettl, Feng Wang, Michael F. Crommie
  • LOCAL DOPING OF TWO-DIMENSIONAL MATERIALS
    Publication number: 20160064249
    Abstract: This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
    Type: Application
    Filed: August 24, 2015
    Publication date: March 3, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Dillon Wong, Jairo Velasco, JR., Long Ju, Salman Kahn, Juwon Lee, Chad E. Germany, Alexander K. Zettl, Feng Wang, Michael F. Crommie
  • Graphene Device, Method of Investigating Graphene, and Method of Operating Graphene Device
    Publication number: 20110006837
    Abstract: The present invention provides for a graphene device comprising: a first gate structure, a second gate structure that is transparent or semi-transparent, and a bilayer graphene coupled to the first and second gate structures, the bilayer graphene situated at least partially between the first and second gate structures. The present invention also provides for a method of investigating semiconductor properties of bilayer graphene and a method of operating the graphene device by producing a bandgap of at least 50 mV within the bilayer graphene by using the graphene device.
    Type: Application
    Filed: June 2, 2010
    Publication date: January 13, 2011
    Inventors: Feng Wang, Yuanbo Zhang, Tsung-ta Tang, Michael F. Crommie, Alexander K. Zettl, Caglar Girit