Abstract: A molded package includes: a mold compound; a first power semiconductor die encapsulated by the mold compound; and a first temperature sense cavity formed in a surface of the mold compound. The molded package is devoid of temperature sense terminals. The first temperature sense cavity is dimensioned to receive a temperature sensor and/or a combined area of each sidewall and a bottom of the first temperature sense cavity is greater than an area of an opening in the surface of the mold compound that delineates the first temperature sense cavity. A corresponding power module and a power electronics assembly that includes the molded package or the power module are also described.

Abstract: A power semiconductor module includes an encapsulation encapsulating power semiconductor dies. The encapsulation includes lateral sides connecting first and second opposite sides. First and second power contacts are electrically coupled to the power semiconductor dies. An isolation part arranged between the power contacts electrically isolates the contacts from one another. The power contacts have a flat shape and are stacked such that their broadest surfaces at least partially overlap. A first portion of the power contacts is parallel to a first plane. A second portion is twisted and/or bent with respect to the first portion such that the second portion is parallel to a second plane arranged at a non-zero angle with respect to the first plane. At least a part of the first portion is encapsulated by the encapsulation. At least a part of the second portion is exposed from the encapsulation at one of the lateral sides.

Abstract: A substrate arrangement includes: a first metallization layer, nanowires arranged on a surface of the first metallization layer; and a component arranged on the first metallization layer such that a first subset of the nanowires is arranged between the first metallization layer and the component. The nanowires are evenly distributed over a section of the surface area or over the entire surface area of the first metallization layer. Each nanowire includes first and second ends. The first end of each nanowire is inseparably connected to the surface of the first metallization layer. The second end of each nanowire of the first subset is inseparably connected to a surface of one of the component such that the first subset of nanowires forms a permanent connection between the first metallization layer and the component. There are fewer nanowires in the first subset of nanowires than there are total nanowires.

Abstract: The invention relates to a method for producing a power module, comprising: providing an insulating substrate, composed of a first metal layer, a second metal layer, and an insulating layer placed between the first metal layer and second metal layer; formation of numerous contact wires located on a first side of the insulating substrate facing away from the second metal layer and on a second side of the insulating substrate facing away from the first metal layer; applying an electrically conductive layer to the first side, which comes in contact with numerous power switches, and applying a heatsink to the second side.