Abstract: The present invention relates to a method of forming gate lines of polycrystalline silicon, polysilicon, which may have a layer of a metal silicide thereon. The gate lines are formed over islands of silicon on an insulating substrate with the islands being covered with a layer of silicon oxide. A polysilicon layer is coated over the silicon oxide layer on the silicon island and on the adjacent surface of the substrate. Resist masking strips are formed over the area of the polysilicon layer which are to form the gate lines. The exposed area of the polysilicon layer is first plasma etched in a gaseous mixture of nitrogen, chlorine and chloroform. The chlorine etches the polysilicon and the chloroform forms a protective coating of a polymer over the side walls of the formed gate lines. The device is then subjected to a second plasma etch in a gaseous mixture of helium, chlorine and carbon dioxide.

Abstract: A calibration device for an optical scanner for optically detecting microscopic defects on object surfaces is formed on a substrate having a characteristic pattern of a plurality of different arrays of artificially created defects. Each array is arranged by size and spacing of the artificial defects to represent an actual defect size. Each artificially created defect of a given array is of the same size. Each defect is provided with a surface which in response to an incident beam of light scatters the light. The response of the system to the scattered light forms a characteristic pattern which corresponds to actual defects.