Abstract: Described are methods, devices, and systems to provide enhanced wireless coverage for wireless mobile stations by facilitating centralized authentication for a variety of unrelated networks. The mobile stations can then access Internet and telephony resources via the various networks for improved coverage and bandwidth. Some embodiments support the extension of network coverage using wireless-access points that can be partitioned into multiple virtual access points, one associated with an enterprise and another with an overlay network that facilitates mobile communication over multiple networks. One physical access point can support an enterprise network using one virtual access point and the overlay network using another. Users unaffiliated with an enterprise can access the overlay network via the enterprise's physical access point without gaining access to the enterprise network.

Abstract: A controller device and method for operating same is disclosed. In one particular exemplary embodiment, the controller device may comprise output driver circuitry and input receiver circuitry. The output driver circuitry may output a value, a first operation code, a block size value, and second operation code. The first operation code may represent an instruction to a memory device to store the value in a register in the memory device. The block size value may indicate an amount of read data to be output by the memory device in response to the second operation code. The second operation code may represent an instruction to the memory device to perform a read operation. The input receiver circuitry may sample a first portion of the read data output by the memory device after a read delay following the outputting of the second operation code.

Abstract: A memory module including an integrated circuit is disclosed. In one particular exemplary embodiment, the memory module may comprise a plurality of memory devices and an integrated circuit device that is coupled to the plurality of memory devices. The integrated circuit device includes a first circuit to receive control information specifying a write operation, and address information specifying a memory location corresponding to the write operation, wherein the memory location is in a first memory device of the plurality of memory devices, and wherein the control information and the address information are received in a multiplexed format. The integrated circuit device also includes a second circuit, including a plurality of output drivers, to output data after a first number of clock cycles of an external clock signal transpire, wherein the data is to be written to the first memory device during the write operation.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control informastion needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: An integrated circuit device is disclosed. In one particular exemplary embodiment, the integrated circuit device may comprise a first circuit to receive, in a multiplexed format, control information and address information, wherein the control information specifies a write operation and the address information specifies a location within a memory array for the write operation. The integrated circuit device may also comprise a second circuit that includes a plurality of output drivers to output write data to be written to the memory array during the write operation, wherein the write data is output after a number of clock cycles of an external clock signal transpire, wherein the write data is output in response to the control information, and wherein each output driver of the plurality of output drivers outputs two bits of the write data during a single clock cycle of the external clock signal.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: A synchronous integrated circuit device including a clock receiver to receive an external clock signal and a plurality of output drivers to output data. A first portion of the data is output synchronously with respect to a rising edge transition of the external clock signal. A second portion of the data is output synchronously with respect to a falling edge transition of the external clock signal. In addition, the integrated circuit device includes a delay locked loop, coupled to the plurality of output drivers and the clock receiver, to synchronize the output of the first and second portions of the data with the external clock signal.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: A synchronous semiconductor memory device including a memory cell array and a plurality of input receivers to sample address information synchronously with respect to a clock signal. The address information includes a row address and a column address. The memory device further includes a plurality of sense amplifiers to sense data from a row of the memory cell array, the row of the memory cell array being identified by the row address. Furthermore, the memory device includes a plurality of column decoders coupled to the plurality of sense amplifiers to access, based on the column address, a plurality of data bits of the data sensed by the plurality of sense amplifiers.

Abstract: A controller device for controlling a synchronous dynamic random access memory device. The controller device includes output driver circuitry to output block size information to the memory device. The block size information defines an amount of data to be output by the memory device. In addition, the controller device includes input receiver circuitry to receive the amount of data output by the memory device.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: An integrated circuit device that includes a clock synchronization circuit. The clock synchronization circuit receives an external clock signal and generates an internal clock signal from the external clock signal using a feedback loop. The internal clock signal is adjusted based on feedback provided via the feedback loop. In addition, the integrated circuit device includes an output circuit. The output circuit includes an output driver to output at least two bits of data in succession during a clock cycle of the external clock signal. The data is output synchronously with respect to the internal clock signal.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: A method of operation of a synchronous memory device. The memory device includes an array of dynamic random access memory cells. The method of operation of the memory device includes receiving an external clock signal, and sampling a first operation code synchronously with respect to the external clock signal, the first operation code specifying a write operation. Additionally, the method of operation of the memory device includes sampling data after a number of clock cycles of the external clock signal transpire. The data is sampled in response to the first operation code.

Abstract: An integrated circuit device which includes an array of dynamic memory cells. The integrated circuit device comprises an input receiver to sample an operation code synchronously with respect to a transition of a clock signal, the operation code indicating a read operation. The integrated circuit device also comprises an output driver to output data in response to the operation code, wherein the data is output after a number of clock cycles of the clock signal transpire.

Abstract: A synchronous memory device including an array of memory cells. The memory device includes a plurality of sense amplifiers, coupled to the array of memory cells, to sense data. The memory device further includes input receiver circuitry to sample an operation code synchronously with respect to a transition of an external clock signal. The operation code including precharge information and, in response to the precharge information, the plurality of sense amplifiers are automatically precharged after the data is sensed.

Abstract: A synchronous integrated circuit memory device including an array of memory cells. The memory device includes a clock receiver to receive an external clock signal, and a plurality of sense amplifiers, coupled to the array of memory cells, to sense data. A first portion of the data is output from the memory device in response to a first operation code bit specifying a read operation. In addition, the memory device includes a first input receiver to sample the first operation code bit in response to a first transition of the external clock signal. Furthermore, the memory device includes a second input receiver to sample a second operation code bit in response to the first transition of the external clock signal. The second operation code bit indicates whether precharging the plurality of sense amplifiers occurs automatically after the data has been sensed. Moreover, the memory device includes a plurality of output drivers to output the portion of the data synchronously with respect to the external clock signal.