Abstract: Line imaging and area imaging devices are described which employ the concept of storage and transfer of charge carriers in a semiconductor medium by the application of appropriate potentials to electrodes disposed above the medium. The devices are characterized by two arrays of electrodes, one functioning as an optical sensing array and the other as a storage and readout array. Charge carriers are collected in the medium under the metal electrodes of the sensing array in proportion to incident light. This information is rapidly transferred to the storage and readout array by sequentially biasing series of electrodes of the two arrays. The information may then be read out of the array without smearing while the sensing array continues to integrate. The structure includes means for preventing cross-coupling and maintaining transfer efficiency for small area electrodes.