Abstract: A flushable tampon applicator product includes an outer tube for housing a tampon; an inner tube, at least a portion of which extends into the outer tube, wherein the outer tube includes an outer, body-contacting surface, wherein the inner tube is moveable relative to the outer tube and configured to expel a tampon from the outer tube, and wherein at least one of the outer tube and the inner tube comprises a thermoplastic composition including partially-hydrolyzed polyvinyl alcohol (PVOH), polyethylene glycol (PEG), a plasticizer, and a hydrophobic polymeric component, wherein at least one of the outer tube and the inner tube is a molded part; and a wrapper material configured for storage under high and low moisture storage conditions, the wrapper material having a water vapor transmission rate of less than 0.05 g/100 in2/day.

Abstract: A water-dispersible injection-moldable composition includes partially-hydrolyzed polyvinyl alcohol (PVOH), polyethylene glycol (PEG), plasticizer, and a hydrophobic polymeric component, wherein the composition has a melt flow index of 5-180. The hydrophobic polymeric component can be a colorant within an ethylene matrix or polyethylene. The composition is flushable according to Guidance Document for Assessing the Flushability of Nonwoven Consumer Products (INDA and EDANA, 2006); Test FG 522.2 Tier 2—Slosh Box Disintegration Test. The PVOH has a hydrolysis of 87% to 89%.

Abstract: A thermoplastic polyolefin elastomer film includes a continuous phase that includes a thermoplastic polyolefin elastomer and a nanoinclusion additive dispersed within the continuous phase in the form of discrete domains, wherein each discrete domain is elongated with a long axis, wherein the axes are aligned in the machine direction (MD) when the film is relaxed, and wherein the axes are aligned in the cross direction (CD) when the film is stretched in the CD. Also, an article includes the thermoplastic polyolefin elastomer film.

Abstract: A flushable tampon applicator product includes an outer tube for housing a tampon; an inner tube, at least a portion of which extends into the outer tube, wherein the outer tube includes an outer, body-contacting surface, wherein the inner tube is moveable relative to the outer tube and configured to expel a tampon from the outer tube, and wherein at least one of the outer tube and the inner tube comprises a thermoplastic composition including partially-hydrolyzed polyvinyl alcohol (PVOH), polyethylene glycol (PEG), a plasticizer, and a hydrophobic polymeric component, wherein at least one of the outer tube and the inner tube is a molded part; and a wrapper material configured for storage under high and low moisture storage conditions, the wrapper material having a water vapor transmission rate of less than 0.05 g/100 in2/day.

Abstract: A water-dispersible injection-moldable composition includes partially-hydrolyzed polyvinyl alcohol (PVOH), polyethylene glycol (PEG), plasticizer, and a hydrophobic polymeric component, wherein the composition has a melt flow index of 5-180. The hydrophobic polymeric component can be a colorant within an ethylene matrix or polyethylene. The composition is flushable according to Guidance Document for Assessing the Flushability of Nonwoven Consumer Products (INDA and EDANA, 2006); Test FG 522.2 Tier 2—Slosh Box Disintegration Test. The PVOH has a hydrolysis of 87% to 89%.

Abstract: A method for forming an injection-molded part includes applying a coating to a mold cavity; maintaining a water-dispersible, thermoplastic composition at a temperature between 170° C. and 190° C., wherein the thermoplastic composition comprises partially-hydrolyzed polyvinyl alcohol (PVOH), polyethylene glycol (PEG), plasticizer, and a hydrophobic polymeric component, wherein the composition has a melt flow rate of from 40 grams per 10 minutes to 160 grams per 10 minutes when subjected to a load of 2160 grams at a temperature of 190° C. according to ASTM Test Method D1238-E; injecting the thermoplastic composition into the mold cavity; shaping the thermoplastic composition into a molded part within the mold cavity; and maintaining the mold temperature at less than 20° C.

Abstract: A water-dispersible injection-moldable composition includes a water-dispersible polymer, polyethylene glycol (PEG), plasticizer, and a hydrophobic polymeric component, wherein the composition has a melt flow index of 5-180. The water-dispersible polymer can be partially-hydrolyzed polyvinyl alcohol (PVOH) or ethylene-vinyl alcohol copolymer. The hydrophobic polymeric component can be a colorant within an ethylene matrix, polyethylene, a degradation product of glycerin/PVOH, erucamide, or poly(dimethyl siloxane). The plasticizer can be glycerin. The composition is flushable according to Guidance Document for Assessing the Flushability of Nonwoven Consumer Products (INDA and EDANA, 2006); Test FG 522.2 Tier 2—Slosh Box Disintegration Test.

Abstract: A thermoplastic polyolefin elastomer film includes a continuous phase that includes a thermoplastic polyolefin elastomer and a nanoinclusion additive dispersed within the continuous phase in the form of discrete domains, wherein each discrete domain is elongated with a long axis, wherein the axes are aligned in the machine direction (MD) when the film is relaxed, and wherein the axes are aligned in the cross direction (CD) when the film is stretched in the CD. Also, an article includes the thermoplastic polyolefin elastomer film.

Abstract: A bonded semiconductor-on-insulator substrate for an integrated circuit. The bonded semiconductor-on-insulator substrate includes a wafer, a handle wafer and an insulating bond layer. The wafer has a first layer of monocrystalline semiconductor material adjacent a first surface of the wafer. The wafer also has a second layer of undamaged by implantation monocrystalline semiconductor material adjacent a second surface of the wafer. The wafer further has a substantially planar intrinsic gettering zone of substantially pure semiconductor material and active gettering sites positioned between the first and second layers formed by implanting ions of the semiconductor material through the first layer of monocrystalline semiconductor material. The insulating bond layer bonds the handle wafer to the first surface of the wafer.

Abstract: A bonded semiconductor-on-insulator substrate for an integrated circuit. The bonded semiconductor-on-insulator substrate includes a wafer, a handle wafer and an insulating bond layer. The wafer has a first layer of monocrystalline semiconductor material adjacent a first surface of the wafer. The wafer also has a second layer of undamaged by implantation monocrystalline semiconductor material adjacent a second surface of the wafer. The wafer further has a substantially planar intrinsic gettering zone of substantially pure semiconductor material and active gettering sites positioned between the first and second layers formed by implanting ions of the semiconductor material through the first layer of monocrystalline semiconductor material. The insulating bond layer bonds the handle wafer to the first surface of the wafer.

Abstract: A bonded semiconductor-on-insulator substrate for an integrated circuit. The bonded semiconductor-on-insulator substrate includes a wafer, a handle wafer and an insulating bond layer. The wafer has a first layer of monocrystalline semiconductor material adjacent a first surface of the wafer. The wafer also has a second layer of undamaged by implantation monocrystalline semiconductor material adjacent a second surface of the wafer. The wafer further has a substantially planar intrinsic gettering zone of substantially pure semiconductor material and active gettering sites positioned between the first and second layers formed by implanting ions of the semiconductor material through the first layer of monocrystalline semiconductor material. The insulating bond layer bonds the handle wafer to the first surface of the wafer.

Abstract: In a method for forming a bonded semiconductor-on-insulator substrate for the fabrication of semiconductor devices and integrated circuits, a surface of a wafer of a monocrystalline semiconductor material is implanted with ions of the semiconductor material a to a selected depth in the wafer to form, adjacent to the surface, an amorphous layer of the semiconductor material. The layer of amorphous semiconductor material extends to a substantially planar zone disposed at substantially the selected depth and comprising the monocrystalline semiconductor material damaged by lattice defects, i.e., end-of-range implant damage. Undamaged material below the selected depth comprises a first layer of the monocrystalline semiconductor material.

Abstract: In a method for forming a bonded semiconductor-on-insulator substrate for the fabrication of semiconductor devices and integrated circuits, a surface of a wafer of a monocrystalline semiconductor material is implanted with ions of the semiconductor material a to a selected depth in the wafer to form, adjacent to the surface, an amorphous layer of the semiconductor material. The layer of amorphous semiconductor material extends to a substantially planar zone disposed at substantially the selected depth and comprising the monocrystalline semiconductor material damaged by lattice defects, i.e., end-of-range implant damage. Undamaged material below the selected depth comprises a first layer of the monocrystalline semiconductor material.