Abstract: The present disclosure provides a method and an apparatus for apparatus for accurately measuring and calibrating elemental concentration measurements for a semiconductor wafer. The apparatus includes an edxrf system for calculating an elemental concentration at a target area of the semiconductor wafer. The apparatus further includes an optical subsystem for calculating volumetric information of the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements for a norm feature at the target area with the volumetric information for the norm feature of the target area to obtain a calibration data. Thereafter, the calibration data obtained is used to calibrate the elemental concentration measurements to achieve an accurate measurement thereof.

Abstract: The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.

Abstract: The present disclosure provides a method and an apparatus for apparatus for accurately measuring and calibrating elemental concentration measurements for a semiconductor wafer. The apparatus includes an edxrf system for calculating an elemental concentration at a target area of the semiconductor wafer. The apparatus further includes an optical subsystem for calculating volumetric information of the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements for a norm feature at the target area with the volumetric information for the norm feature of the target area to obtain a calibration data. Thereafter, the calibration data obtained is used to calibrate the elemental concentration measurements to achieve an accurate measurement thereof.

Abstract: The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.

Abstract: A confocal wafer inspection system including: (a) a table to carry a wafer for inspection, the table having two vertical degrees of freedom to enable XY axis movements; (b) a movement device for moving the table along the degrees of freedom; (c) a confocal height measurement system, perpendicular to the table, for measuring the range to a point on a surface of the wafer and for enabling to recognize changes in surface altitude while the wafer moves with the table; and (d) a computer operative for: (i) holding a bumps map of the wafer; (ii) controlling the movement device; (iii) moving the table so that the measuring point of the confocal height measurement system crosses each bump of the wafer; (iv) storing a height profile of each bump; (v) comparing the height profiles or checking each height profile according to predetermined criteria or both; and (vi) enabling a results output. The invention also relates to a method for confocal wafer inspection.

Abstract: A confocal wafer inspection system including: (a) a table to carry a wafer for inspection, the table having two vertical degrees of freedom to enable XY axis movements; (b) a movement device for moving the table along the degrees of freedom; (c) a confocal height measurement system, perpendicular to the table, for measuring the range to a point on a surface of the wafer and for enabling to recognize changes in surface altitude while the wafer moves with the table; and (d) a computer operative for: (i) holding a bumps map of the wafer; (ii) controlling the movement device; (iii) moving the table so that the measuring point of the confocal height measurement system crosses each bump of the wafer; (iv) storing a height profile of each bump; (v) comparing the height profiles or checking each height profile according to predetermined criteria or both; and (vi) enabling a results output. The invention also relates to a method for confocal wafer inspection.

Abstract: A system for analyzing the quality of the sawing of a material which includes a scanning unit, a cut parameter identifier and a cut analyzer. The scanning unit scans along cuts of the material and views at least a portion of a cut. The cut parameter identifier identifies and stores parameters of the viewed cut portion. The cut analyzer analyzes the parameters of a multiplicity of viewed cut portions and which determines the quality of the cuts therefrom.