Abstract: In some embodiments, a semiconductor structure can include: a diamond substrate having a surface conductive layer; a heavily doped region formed in the diamond substrate; and a metal contact positioned over the conductive surface layer such that a first portion of the heavily doped region is covered by the metal contact and a second portion of the heavily doped region is not covered by the metal contact.

Abstract: According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.

Abstract: In some embodiments, a semiconductor structure can include: a diamond substrate having a surface conductive layer; a heavily doped region formed in the diamond substrate; and a metal contact positioned over the conductive surface layer such that a first portion of the heavily doped region is covered by the metal contact and a second portion of the heavily doped region is not covered by the metal contact.

Abstract: According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.

Abstract: A locking device for a component rotatably mounted on a bearing block, includes a lock mechanism for locking the component in different angular positions, and a switching mechanism for switching the lock mechanism between locking and release positions, the lock mechanism being a clamping lock mechanism including inner and outer rings, one held stationary on the bearing block and the other rotatably connected to the rotatable component with an annular gap therebetween, pairs of clamping bodies in the annular gap, a clamping contour on one ring and delimiting the gap, the clamping bodies and clamping contour being mirror-symmetrical, elastic spreading members between clamping bodies of each pair and prestress the clamping bodies into a clamping position, and a release element including release fingers which, in the release position, engage into intermediate spaces between pairs of clamping bodies and is rotatable together with the ring with the clamping contour.

Abstract: A buffer layer is employed to fabricate diamond membranes and allow reuse of diamond substrates. In this approach, diamond membranes are fabricated on the buffer layer, which in turn is disposed on a diamond substrate that is lattice-matched to the diamond membrane. The weak bonding between the buffer layer and the diamond substrate allows ready release of the fabricated diamond membrane. The released diamond membrane is transferred to another substrate to fabricate diamond devices, while the diamond substrate is reused for another fabrication.

Abstract: A buffer layer is employed to fabricate diamond membranes and allow reuse of diamond substrates. In this approach, diamond membranes are fabricated on the buffer layer, which in turn is disposed on a diamond substrate that is lattice-matched to the diamond membrane. The weak bonding between the buffer layer and the diamond substrate allows ready release of the fabricated diamond membrane. The released diamond membrane is transferred to another substrate to fabricate diamond devices, while the diamond substrate is reused for another fabrication.

Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.

Abstract: A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10?7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm?1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

Abstract: A subcaliber kinetic energy projectile (1) including a penetrator (2) and a segmented sabot (3) which is provided with a front support (4) and with a second support (5) that is disposed at an axial distance behind the first support, with the second support (5) including a rotationally symmetrical air pocket (6) that faces the first support (4) and the first support (4) is provided with air passage openings (43, 44, 45).In the sabot, the relationship of L/D.gtoreq.1.2 exists between the length L of the penetrator tip (8) ahead of the first support (4) and the caliber D. The relationship x.gtoreq.0.45 * .iota. further applies between the distances x and .iota., with x being the distance between the trailing edge (10) of the sabot and the base surface (11) of the air pocket (6) in the second support (5) and .iota. being the distance between the trailing edge (10) of the sabot (3) and the leading edge (12) of the sabot at the surface of the penetrator (2).