Abstract: A method for detecting deposited particles (P) on a surface (11) of an object (3, 14) includes: irradiating a partial region of the surface (11) of the object (3, 14) with measurement radiation; detecting measurement radiation scattered on the irradiated partial region, and detecting particles in the partial region of the surface of the object (3, 14) based on the detected measurement radiation. In the steps of irradiating and detecting, the surface (11) of the object (3, 14) has an anti-reflective coating (13) and/or a surface structure (15) for reducing the reflectivity of the surface (11) for the measurement radiation (9), wherein the particle detection limit is lowered due to the anti-reflective coating (13) and/or the surface structure (15). Also disclosed are a wafer (3) and a mask blank for carrying out the method.

Abstract: An optical grating (8) includes a substrate (9), on the surface (9a) of which a periodic structure (10) is formed that is embodied to diffract incident radiation (11), in particular incident EUV radiation, with a specified wavelength (??) into a predetermined order of diffraction, in particular into the first order of diffraction (m=+1). The optical grating also has a coating (12) applied onto the periodic structure with at least one layer (13, 14) that is embodied to suppress the diffraction of the incident radiation into at least one higher order of diffraction (m=+2, . . . ) than the predetermined order of diffraction.

Abstract: A method for detecting deposited particles (P) on a surface (11) of an object (3, 14) includes: irradiating a partial region of the surface (11) of the object (3, 14) with measurement radiation; detecting measurement radiation scattered on the irradiated partial region, and detecting particles in the partial region of the surface of the object (3, 14) based on the detected measurement radiation. In the steps of irradiating and detecting, the surface (11) of the object (3, 14) has an anti-reflective coating (13) and/or a surface structure (15) for reducing the reflectivity of the surface (11) for the measurement radiation (9), wherein the particle detection limit is lowered due to the anti-reflective coating (13) and/or the surface structure (15). Also disclosed are a wafer (3) and a mask blank for carrying out the method.

Abstract: An optical grating (8) includes a substrate (9), on the surface (9a) of which a periodic structure (10) is formed that is embodied to diffract incident radiation (11), in particular incident EUV radiation, with a specified wavelength (??) into a predetermined order of diffraction, in particular into the first order of diffraction (m=+1). The optical grating also has a coating (12) applied onto the periodic structure with at least one layer (13, 14) that is embodied to suppress the diffraction of the incident radiation into at least one higher order of diffraction (m=+2, . . . ) than the predetermined order of diffraction.

Abstract: A raster arrangement includes at least one raster element of a first type and at least one raster element of a second type. Each raster element of the first type has a first bundle-influencing effect. Each raster element of the second type has a second bundle-influencing effect which is different from the first bundle-influencing effect. Each raster element of the first type is located in a first area of the raster arrangement. Each raster element of the second type is located in a second area of the raster arrangement which is different from the first area of the raster arrangement.

Abstract: A raster arrangement includes at least one raster element of a first type and at least one raster element of a second type. Each raster element of the first type has a first bundle-influencing effect. Each raster element of the second type has a second bundle-influencing effect which is different from the first bundle-influencing effect. Each raster element of the first type is located in a first area of the raster arrangement. Each raster element of the second type is located in a second area of the raster arrangement which is different from the first area of the raster arrangement.

Abstract: A method and associated EUV lithography apparatus for determining the phase angle at a free interface (17) of an optical element (13) provided with a multilayer coating (16) that reflects EUV radiation and/or for determining the thickness (d) of a contamination layer (26) formed on the multilayer coating (16). The multilayer coating (16) is irradiated with EUV radiation, a photocurrent (IP) generated during the irradiation is measured, and the phase angle at the free interface (17) and/or the thickness (d) of the contamination layer (26) is determined on the basis of a predefined relationship between the phase angle and/or the thickness (d) and the measured photocurrent (IP). The measured photocurrent (IP) is generated from the entire wavelength and angle-of-incidence distribution of the EUV radiation impinging on the multilayer coating (16).

Abstract: A microlithography illumination system includes a first raster arrangement including a first plurality of bundle-forming raster elements arranged in or adjacent a first plane of the illumination system. The first plurality of bundle-forming raster elements is configured to generate a raster arrangement of secondary light sources. The illumination system also includes a transmission optics configured to superimpose transmission of the illumination light of the secondary light sources into the object field. The transmission optics includes a second raster arrangement comprising a second plurality of bundle-forming raster elements. The illumination system further includes a displacement device configured to displace a displaceable segment of the first raster arrangement relative to the second raster arrangement. The displaceable segment includes exactly one of the raster elements, a group of several raster elements, a raster column, a raster area, or several groups of raster elements.

Abstract: An illumination system for microlithography serves to illuminate an illumination field with illumination light of a primary light source. A first raster arrangement has bundle-forming first raster elements which are arranged in a first plane of the illumination system or adjacent to the plane. The first raster arrangement serves to generate a raster arrangement of secondary light sources. A transmission optics serves for superimposed transmission of the illumination light of the secondary light sources into the illumination field. The transmission optics has a second raster arrangement with bundle-forming second raster elements. In each case one of the raster elements of the first raster arrangement is allocated to one of the raster elements of the second raster arrangement for guiding a partial bundle of an entire bundle of illumination light. The first raster arrangement for example has at least two types (I, II, III) of the first raster elements which have different bundle-influencing effects.

Abstract: A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.

Abstract: A method for operating a projection exposure tool for microlithography is provided. The projection exposure tool includes an optical system which includes a number of optical elements which, during an imaging process, convey electromagnetic radiation. All of the surfaces of the optical elements interact with the electromagnetic radiation during the imaging process to form an overall optical surface of the optical system.

Abstract: A raster arrangement includes first and second types of raster elements which have different bundle-influencing effects. There is a distance step between a first raster area and a second raster area. The first raster area comprises a raster element of the first raster element type. The second raster area includes a raster element of the second raster element type. The raster arrangement is configured to be used in a microlithography illumination system.

Abstract: A method and associated EUV lithography apparatus for determining the phase angle at a free interface (17) of an optical element (13) provided with a multilayer coating (16) that reflects EUV radiation and/or for determining the thickness (d) of a contamination layer (26) formed on the multilayer coating (16). The multilayer coating (16) is irradiated with EUV radiation, a photocurrent (IP) generated during the irradiation is measured, and the phase angle at the free interface (17) and/or the thickness (d) of the contamination layer (26) is determined on the basis of a predefined relationship between the phase angle and/or the thickness (d) and the measured photocurrent (IP). The measured photocurrent (IP) is generated from the entire wavelength and angle-of-incidence distribution of the EUV radiation impinging on the multilayer coating (16).

Abstract: An optical beam deflecting element may be used effectively as an energy distribution manipulator in an illumination system to vary the energy distribution within a given spatial intensity distribution in a pupil plane of the illumination system substantially without changing the shape and size and position of illuminated areas in the pupil plane.

Abstract: A raster arrangement includes first and second types of raster elements which have different bundle-influencing effects. There is a distance step between a first raster area and a second raster area. The first raster area comprises a raster element of the first raster element type. The second raster area includes a raster element of the second raster element type. The raster arrangement is configured to be used in a microlithography illumination system.

Abstract: For the production of mirrors for EUV lithography, substrates are suggested having a mean relative thermal longitudinal expansion of no more than 10 ppb across a temperature difference ?T of 15° C. and a zero-crossing temperature in the range between 20° C. and 40° C. For this purpose, at least one first and one second material having low thermal expansion coefficients and opposite gradients of the relative thermal expansion as a function of temperature are selected and a substrate is produced by mixing and bonding these materials.

Abstract: An illumination system for microlithography serves to illuminate an illumination field with illumination light of a primary light source. A first raster arrangement has bundle-forming first raster elements which are arranged in a first plane of the illumination system or adjacent to the plane. The first raster arrangement serves to generate a raster arrangement of secondary light sources. A transmission optics serves for superimposed transmission of the illumination light of the secondary light sources into the illumination field. The transmission optics has a second raster arrangement with bundle-forming second raster elements. In each case one of the raster elements of the first raster arrangement is allocated to one of the raster elements of the second raster arrangement for guiding a partial bundle of an entire bundle of illumination light. The first raster arrangement for example has at least two types (I, II, III) of the first raster elements which have different bundle-influencing effects.

Abstract: A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.

Abstract: A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.

Abstract: The disclosure relates to an optical integrator configured to produce a plurality of secondary light sources in an illumination system of a microlithographic projection exposure apparatus. The disclosure also relates to a method of manufacturing an array of elongated microlenses for use in such an illumination system. Arrays of elongated microlenses are often contained in optical integrators or scattering plates of such illumination systems.