Abstract: The present disclosure provides a system and method for generating an empathetic profile and sending messages to a living individual. The system and method includes a processor configured to create the empathetic profile using personal data of a deceased individual, to create a user profile using personal data of the living individual, and to create a relationship link in a database of relationships between the empathetic profile and the user profile based on association data and similarities in data between the empathetic profile and the user profile. The processor is further configured to generate a message to be sent by a communications interface when a trigger condition is met, wherein the content of the generated message is based on the empathetic profile, the user profile and the relationship link. The system and method further includes a memory to store the empathetic profile, the user profile and the database of relationships.

Abstract: A drilling and production system is provided. In one embodiment, such a system has a plurality of functions that are effectuated at least predominately without hydraulic fluid. The system can be a drilling system having a rig and a subsea stack for performing various drilling functions, in which a majority of the drilling functions are effected electrically without hydraulic control fluid. In another embodiment, the rig is coupled to a subsea wellhead assembly but is not connected so as to provide hydraulic control fluid from the rig to the subsea wellhead assembly to enable drilling functions of the subsea wellhead assembly. Additional systems, devices, and methods are also disclosed.

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.

Abstract: Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.

Abstract: Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.

Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

Abstract: The present disclosure relates to methods and apparatuses for selectively depositing silicon and oxygen-comprising material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising providing a substrate in a reaction chamber; providing a metal or metalloid catalyst to the reaction chamber in a vapor phase; providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and providing an oxygen precursor comprising oxygen and hydrogen into the reaction chamber in vapor phase to form silicon and oxygen-comprising material on the first surface. The disclosure further relates to vapor deposition assemblies.

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (??) of greater than 2×106 cm2/mol.

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (??) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes an element having a relatively high extreme ultraviolet (EUV) sensitivity on a mass basis while having a relatively low EUV sensitivity on a mole basis.

Abstract: The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.

Abstract: A noble metal liner and a metal-insulator-metal (MIM) capacitor (MIMCAP) are described along with the methods of manufacture or fabrication. The MIM capacitor includes a liner formed of a thin layer or film of a noble metal, which is only a few nanometers thick, e.g., a thickness in the range of about 0.5 nm to about 5 nm or more. In a finished device such as a MIM capacitor, the noble metal liner is sandwiched between a thicker electrode and the insulator, e.g., a layer or thin film of high or ultra high-k material, thereby providing a cap for the electrode to limit leakage currents in the device.

Abstract: The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.