Patents by Inventor Michael Goodner

Michael Goodner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060003253
    Abstract: A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.
    Type: Application
    Filed: June 30, 2004
    Publication date: January 5, 2006
    Inventors: Robert Meagley, Michael Goodner, Robert Leet, Michael McSwiney
  • Publication number: 20050287787
    Abstract: A method for selecting and forming a low-k, relatively high E porous ceramic film in a semiconductor device is described. A ceramic material is selected having a relatively high Young's modulus and relatively lower dielectric constant. The k is reduced by making the film porous.
    Type: Application
    Filed: June 29, 2004
    Publication date: December 29, 2005
    Inventors: Grant Kloster, Jihperng Leu, Michael Goodner, Michael Haverty, Sadasivan Shankar
  • Publication number: 20050260790
    Abstract: A method of making an electronics substrate is provided. A material is deposited on a base component. The material has a first composition and includes a polymer. A pattern is imprinted into the material by contacting the material with a die and moving a profile of the die into the material. The material is then modified while being held in the profile of the die to cause at least partial curing of the material due to a change in composition of the material from a first composition to a second composition. The die is then removed from the material. Electric conductors are then formed in trenches of the pattern.
    Type: Application
    Filed: May 24, 2004
    Publication date: November 24, 2005
    Inventors: Michael Goodner, Paul Koning, James Matabayas, Robert Meagley
  • Publication number: 20050258107
    Abstract: Methods and systems for the concentration and removal of metal ions from aqueous solutions are described, comprising treating the aqueous solutions with photoswitchable ionophores.
    Type: Application
    Filed: May 20, 2004
    Publication date: November 24, 2005
    Inventors: Bob Leet, Robert Meagley, Michael Goodner, Michael McSwiney
  • Publication number: 20050239281
    Abstract: The invention provides a layer of photosensitive material that may be directly patterned. The photosensitive material may then be decomposed to leave voids or air gaps in the layer. This may provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.
    Type: Application
    Filed: April 21, 2004
    Publication date: October 27, 2005
    Inventors: Michael Goodner, Kevin O'Brien, Grant Kloster, Robert Meagley
  • Publication number: 20050230836
    Abstract: A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.
    Type: Application
    Filed: April 20, 2004
    Publication date: October 20, 2005
    Inventors: James Clarke, Michael Goodner
  • Publication number: 20050227094
    Abstract: Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.
    Type: Application
    Filed: June 7, 2005
    Publication date: October 13, 2005
    Inventors: Grant Kloster, Robert Meagley, Michael Goodner, Kevin O'brien, Don Bruner
  • Publication number: 20050179140
    Abstract: An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer comprising a porous matrix, as well as a porogen in certain variations, is formed adjacent a sacrificial dielectric layer. Subsequent to other processing treatments, a portion of the sacrificial dielectric layer is decomposed and removed through a portion of the porous matrix using supercritical carbon dioxide leaving voids in positions previously occupied by portions of the sacrificial dielectric layer. The resultant structure has a desirably low k value as a result of the voids and materials comprising the porous matrix and other structures. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
    Type: Application
    Filed: April 14, 2005
    Publication date: August 18, 2005
    Inventors: Michael Goodner, Jihperng Leu
  • Publication number: 20050171277
    Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition.
    Type: Application
    Filed: November 18, 2003
    Publication date: August 4, 2005
    Inventors: Bo Li, Joseph Kennedy, Nancy Iwamoto, Victor Lu, Roger Leung, Mark Fradkin, Makarem Hussein, Michael Goodner
  • Publication number: 20050163927
    Abstract: A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.
    Type: Application
    Filed: January 23, 2004
    Publication date: July 28, 2005
    Inventors: Michael McSwiney, Mansour Moinpour, Michael Goodner
  • Publication number: 20050156288
    Abstract: A dielectric layer on a semiconductor substrate is made porous by radiation with UV light. The dielectric material contains a photosensitive moiety that absorbs UV radiation and dissociates from the dielectric material. The UV-activated material then may be diffused to create pores in the dielectric layer, and to provide a dielectric layer having a low dielectric constant.
    Type: Application
    Filed: February 15, 2005
    Publication date: July 21, 2005
    Inventor: Michael Goodner
  • Publication number: 20050145890
    Abstract: Method and structure for optimizing dual damascene patterning with polymeric dielectric materials are disclosed. Certain embodiments of the invention comprise polymeric sacrificial light absorbing materials (“polymer SLAM”) functionalized to have a controllable solubility switch wherein such polymeric materials have substantially the same etch rate as conventionally utilized polymeric dielectric materials, and subsequent to chemical modification of solubility-modifying protecting groups comprising the SLAM materials by thermal treatment or in-situ generation of an acid, such SLAM materials become soluble in weak bases, such as those conventionally utilized to remove materials in lithography treatments.
    Type: Application
    Filed: February 11, 2005
    Publication date: July 7, 2005
    Inventor: Michael Goodner
  • Publication number: 20050129926
    Abstract: Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.
    Type: Application
    Filed: December 12, 2003
    Publication date: June 16, 2005
    Inventors: Grant Kloster, Robert Meagley, Michael Goodner, Kevin O'brien
  • Publication number: 20050124152
    Abstract: A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.
    Type: Application
    Filed: November 10, 2004
    Publication date: June 9, 2005
    Inventors: Robert Meagley, Michael Goodner
  • Publication number: 20050106886
    Abstract: Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
    Type: Application
    Filed: November 17, 2003
    Publication date: May 19, 2005
    Inventors: Michael Goodner, Robert Meagley, Kevin O'Brien
  • Publication number: 20050084807
    Abstract: Line edge roughness may be reduced by treating a patterned photoresist with a plasticizer. The plasticizer may be utilized in a way to surface treat the photoresist after development. Thereafter, the plasticized photoresist may be subjected to a heating step to reflow the photoresist. The reflow process may reduce the line edge roughness of the patterned, developed photoresist.
    Type: Application
    Filed: October 17, 2003
    Publication date: April 21, 2005
    Inventors: Robert Meagley, Michael Goodner, E. Putna, Shan Clark, Wang Yueh
  • Publication number: 20050074981
    Abstract: Materials may be utilized as photoresists which have relatively plasma poor etch resistance. Examples include acrylates and fluorinated polymers, which have very good transparency but poor etch resistance. Materials with relatively poor etch resistance may be first applied to the semiconductor wafer and patterned. After they have been patterned, their etch resistance may be improved. For example, the etch resistance may be improved by applying an absorbate which may be cross-linked or polymerized to increase the etch resistance of the already patterned material. Thereafter, the material with the improved etch resistance may be used as an etching mask.
    Type: Application
    Filed: October 6, 2003
    Publication date: April 7, 2005
    Inventors: Robert Meagley, Michael Goodner
  • Publication number: 20050025885
    Abstract: A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.
    Type: Application
    Filed: July 30, 2003
    Publication date: February 3, 2005
    Inventors: Michael McSwiney, Michael Goodner
  • Publication number: 20050014378
    Abstract: A substrate patterning integration is disclosed to address structural and process limitations of conventional resist patterning over hardmask techniques. A resist layer positioned adjacent a substrate layer is patterned, subsequent to which a hardmask layer is deposited. The hardmask layer may be thinned to expose remaining portions of the patterned resist layer for removal by chemical treatment to expose portions of the underlying substrate layer into which the pattern may be transferred using wet or dry chemical etch techniques.
    Type: Application
    Filed: July 16, 2003
    Publication date: January 20, 2005
    Inventors: Michael Goodner, Bob Leet, Robert Meagley, Michael McSwiney
  • Publication number: 20050008966
    Abstract: A polymer system for semiconductor applications may be formed by blending a filler material including Zirconia or silica and a polybenzoxazole precursor for a photodefinable polymer. The filler may be chosen so as not to adversely affect the photodefinability of the resulting system and, in some embodiments, may improve the mechanical or chemical properties of the resulting system.
    Type: Application
    Filed: July 10, 2003
    Publication date: January 13, 2005
    Inventors: Robert Meagley, Takashi Hirano, Michael Goodner