Abstract: A gas chromatography guard column assembly is disclosed including a guard column having an inlet and an outlet. The guard column is disposed in a coil having a column coil aspect ratio of less than 15. A gas chromatography system is disclosed including an oven cavity, a heater assembly, an inlet, a guard column, an analytical column, and a detector. The guard column is in fluid communication with the inlet and is disposed in a guard column coil. The analytical column is in fluid communication with the guard column and is disposed in an analytical column coil. The detector is in fluid communication with the analytical column. The analytical column coil has an analytical column coil central axis aligned with a central axis of the heater assembly, and the guard column coil has a guard column coil central axis remote from the central axis of the heater assembly.

Abstract: A high aspect ratio vacuum air sampling assembly is disclosed including a first canister module. The canister module includes a high aspect ratio conduit having an aspect ratio of at least 30:1, an inlet disposed at an inlet end of the conduit, and an outlet with an outlet valve disposed at an outlet end of the conduit. The outlet is in fluid communication with the inlet through an internal volume of the conduit. An air sampling train is attached to and in fluid communication with the inlet, and includes an inlet valve, a precision orifice, and a flow controller. The inlet valve and the outlet valve are configured to isolate the internal volume of the conduit from fluid communication with an external environment when the inlet valve and the outlet valve are closed. The assembly may further include a second canister module or more in sequence.

Abstract: Methods of patterning vias and trenches using a polymerization protective liner after forming a lower patterned mask layer used for etching trenches on a semiconductor substrate prior to forming an upper patterned mask layer used for etching vias are provided. Methods involve forming a polymerization protective liner either nonconformally or conformally using silicon tetrachloride and methane polymerization. Polymerization protective liners may be sacrificial.

Abstract: An on-load tap changer head includes: a first region for an insulating fluid of the on-load tap changer to flow; a second region separated from the first region by a wall; and a detector for detecting an increased flow speed of the insulating fluid. The detector includes: a flow flap in the first region configured to tilt from a defined flow speed of the insulating fluid from a first position to a second position; a first magnet secured to the flap such that in the second position of the flow flap, the first magnet is in an immediate vicinity of the wall; a second magnet in the second region in the immediate vicinity of the wall; and a switch in the second region that is operationally coupled to the second magnet such that tilting over of the flow flap from the first position to the second position actuates the switch.

Abstract: An on-load tap changer head includes: a first region for an insulating fluid of the on-load tap changer to flow; a second region separated from the first region by a wall; and a detector for detecting an increased flow speed of the insulating fluid. The detector includes: a flow flap in the first region configured to tilt from a defined flow speed of the insulating fluid from a first position to a second position; a first magnet secured to the flap such that in the second position of the flow flap, the first magnet is in an immediate vicinity of the wall; a second magnet in the second region in the immediate vicinity of the wall; and a switch in the second region that is operationally coupled to the second magnet such that tilting over of the flow flap from the first position to the second position actuates the switch.

Abstract: A gas chromatography guard column assembly is disclosed including a guard column having an inlet and an outlet. The guard column is disposed in a coil having a column coil aspect ratio of less than 15. A gas chromatography system is disclosed including an oven cavity, a heater assembly, an inlet, a guard column, an analytical column, and a detector. The guard column is in fluid communication with the inlet and is disposed in a guard column coil. The analytical column is in fluid communication with the guard column and is disposed in an analytical column coil. The detector is in fluid communication with the analytical column. The analytical column coil has an analytical column coil central axis aligned with a central axis of the heater assembly, and the guard column coil has a guard column coil central axis remote from the central axis of the heater assembly.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A motor drive for actuation of an on- or off-load tap changer the drive has a drive motor, a load transmission having a first drive shaft carrying a first drive wheel and connected with the drive motor and a second drive shaft carrying a second drive wheel, and a mechanical coupling between the first and second drive wheels. The second drive shaft is operatively connected at a first end with the on- or off-load tap changer and at a second end with an indicator transmission. A setting indicator operatively connected with the indicator transmission displays the current setting of the on- or off-load tap changer, and a disengageable coupling is provided between the setting indicator and the load transmission.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A system for performing a sidewall image transfer process includes a substrate processing chamber configured to process a substrate including a mandrel layer. A controller is configured to control the substrate processing chamber to, without the substrate being removed from the within the substrate processing chamber, etch the mandrel layer, subsequent to etching the mandrel layer, deposit a thin spacer layer on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls, subsequent to depositing the thin spacer layer, etch the thin spacer layer to remove the thin spacer layer such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains and, subsequent to etching the thin spacer layer, etch the mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: The present invention involves a spare tire carrier and handling device for mounting on a vehicle. The device is adapted for moving a spare tire between a stored position under a vehicle to an accessible position. The device may be mounted so as to be accessible from the rear, side, or front of a vehicle as desired.

Abstract: The present invention relates to a motor drive having a position indicator for actuation of an on-load tap changer or diverter. The invention proposes a motor drive for actuating an on-load tap changer or diverter. This diverter has a drive motor which drives at least one load gear and an indicator gear, wherein the load gear has a first drive shaft, having a first drive pulley which is mechanically connected thereto and is connected to the drive motor, and a second drive shaft having a second drive pulley which is connected thereto. The first and second drive pulleys are mechanically coupled, wherein the second drive shaft itself is operatively connected on the first side thereof to the on-load tap changer or the diverter and can be connected by the second side thereof to the indicator gear.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: The present invention involves a spare tire carrier and handling device for mounting on a vehicle. The device is adapted for moving a spare tire between a stored position under a vehicle to an accessible position. The device may be mounted so as to be accessible from the rear, side, or front of a vehicle as desired.

Abstract: A device for transferring and containing liquid and a mixing method are provided. The device includes a vial having at least two storage lumens extending axially along a vial body, a transfer channel coupled to a distal end of each of the storage lumens, and a common chamber in fluid communication with the storage lumens via the transfer channels. The mixing method includes providing the device for transferring and containing liquid material; providing a fluid subunit in each of the storage lumens, a distal gasket sealing each of the fluid subunits from a distal end of the vial; providing a plunger assembly coupled to a proximal end of the vial; and depressing the plunger assembly. Depressing the plunger assembly forces the distal gaskets into the gasket seats and transfers the fluid subunits into the common chamber via the transfer channels.