Abstract: Methods of patterning vias and trenches using a polymerization protective liner after forming a lower patterned mask layer used for etching trenches on a semiconductor substrate prior to forming an upper patterned mask layer used for etching vias are provided. Methods involve forming a polymerization protective liner either nonconformally or conformally using silicon tetrachloride and methane polymerization. Polymerization protective liners may be sacrificial.

Abstract: Methods of patterning vias and trenches using a polymerization protective liner after forming a lower patterned mask layer used for etching trenches on a semiconductor substrate prior to forming an upper patterned mask layer used for etching vias are provided. Methods involve forming a polymerization protective liner either nonconformally or conformally using silicon tetrachloride and methane polymerization. Polymerization protective liners may be sacrificial.

Abstract: An on-load tap changer head includes: a first region for an insulating fluid of the on-load tap changer to flow; a second region separated from the first region by a wall; and a detector for detecting an increased flow speed of the insulating fluid. The detector includes: a flow flap in the first region configured to tilt from a defined flow speed of the insulating fluid from a first position to a second position; a first magnet secured to the flap such that in the second position of the flow flap, the first magnet is in an immediate vicinity of the wall; a second magnet in the second region in the immediate vicinity of the wall; and a switch in the second region that is operationally coupled to the second magnet such that tilting over of the flow flap from the first position to the second position actuates the switch.

Abstract: An on-load tap changer head includes: a first region for an insulating fluid of the on-load tap changer to flow; a second region separated from the first region by a wall; and a detector for detecting an increased flow speed of the insulating fluid. The detector includes: a flow flap in the first region configured to tilt from a defined flow speed of the insulating fluid from a first position to a second position; a first magnet secured to the flap such that in the second position of the flow flap, the first magnet is in an immediate vicinity of the wall; a second magnet in the second region in the immediate vicinity of the wall; and a switch in the second region that is operationally coupled to the second magnet such that tilting over of the flow flap from the first position to the second position actuates the switch.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A motor drive for actuation of an on- or off-load tap changer the drive has a drive motor, a load transmission having a first drive shaft carrying a first drive wheel and connected with the drive motor and a second drive shaft carrying a second drive wheel, and a mechanical coupling between the first and second drive wheels. The second drive shaft is operatively connected at a first end with the on- or off-load tap changer and at a second end with an indicator transmission. A setting indicator operatively connected with the indicator transmission displays the current setting of the on- or off-load tap changer, and a disengageable coupling is provided between the setting indicator and the load transmission.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A system for performing a sidewall image transfer process includes a substrate processing chamber configured to process a substrate including a mandrel layer. A controller is configured to control the substrate processing chamber to, without the substrate being removed from the within the substrate processing chamber, etch the mandrel layer, subsequent to etching the mandrel layer, deposit a thin spacer layer on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls, subsequent to depositing the thin spacer layer, etch the thin spacer layer to remove the thin spacer layer such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains and, subsequent to etching the thin spacer layer, etch the mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.

Abstract: The present invention relates to a motor drive having a position indicator for actuation of an on-load tap changer or diverter. The invention proposes a motor drive for actuating an on-load tap changer or diverter. This diverter has a drive motor which drives at least one load gear and an indicator gear, wherein the load gear has a first drive shaft, having a first drive pulley which is mechanically connected thereto and is connected to the drive motor, and a second drive shaft having a second drive pulley which is connected thereto. The first and second drive pulleys are mechanically coupled, wherein the second drive shaft itself is operatively connected on the first side thereof to the on-load tap changer or the diverter and can be connected by the second side thereof to the indicator gear.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.

Abstract: A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.

Abstract: Geometry and view data relating to a image sequences is transmitted from a server to a client computer. Such enables reconstruction of images by a client with reduced bandwidth for the image stream transmission. A previous-image mesh of coordinates and depth values for selected pixels from the array of pixels in a previous-image is generated at the server. The depth values are transmitted to the client. A change-in-view matrix is generated at the server and transmitted to the client. Such represents the change in viewing parameters between the previous-image and a current-image. The change-in-view matrix is applied to the previous-image mesh to create a current-image mesh, independently at both the server and at the client. Such is applied to the previous-image to generate a predicted current-image. The current-image is generated at the server and a difference between the current-image and the predicted current-image is computed.

Abstract: A method for culling visual data streams. Specifically, one embodiment of the present invention discloses a method for culling view dependent visual data streams for a virtual environment. The method begins by determining a view volume of a viewing participant within the virtual environment. The view volume determines a field-of-view of the viewing participant within the virtual environment. The embodiment of the method then determines a proximity of a representation of an observed object in the virtual environment to the view volume. Thereafter, the embodiment of the method processes a view dependent visual data stream of the observed object only when the representation is within a specified proximity to the view volume.

Abstract: An inlet seal assembly for sealing an injection port member in a chromatography instrument, comprising an injection port member having a bottom surface with a raised metal ring, an inlet seal member with an upper surface, a peripheral groove formed in the upper surface of the inlet seal member, a soft ring made of resinous plastic material positioned in the peripheral groove of the inlet seal member opposite the raised metal sealing ring of the injection port member, a reducing nut holding the inlet seal member against the injection port member, and threads connecting the reducing nut to the injection port member whereby to press the soft ring of the inlet seal member against the raised metal sealing ring of the injection port member to form a seal between the sealing ring and the injection port member. A method of making and using the inlet seal assembly.