Patents by Inventor Michael Gotskowski

Michael Gotskowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for fabricating semiconductor structures
    Patent number: 7842616
    Abstract: Methods for fabricating semiconductor structures are provided. A first layer may be deposited onto a substrate followed by the deposition of a second layer onto the first layer. A plurality of line structures may be etched in the second layer. A third layer, deposited onto the plurality of line structures of the second layer, may subsequently be etched to expose the plurality of line structures in the second layer. The plurality of line structures in the second layer may be removed, leaving an etched third layer. The etched third layer may be used as a mask to etch the first layer to form a semiconductor structure in the first layer. In some respects, the methods may include steps for etching the substrate using the etched first layer. The methods may also provide annealing the etched substrate to form a corrugate substrate surface.
    Type: Grant
    Filed: January 22, 2007
    Date of Patent: November 30, 2010
    Assignee: Advanced Technology Development Facility, Inc.
    Inventors: Shuji Ikeda, Jeff Wetzel, James Beach, Charles Stager, Michael Gotskowski, Andrew Collin Campbell
  • Methods for Fabricating Semiconductor Structures
    Publication number: 20080176406
    Abstract: Methods for fabricating semiconductor structures are provided. A first layer may be deposited onto a substrate followed by the deposition of a second layer onto the first layer. A plurality of line structures may be etched in the second layer. A third layer, deposited onto the plurality of line structures of the second layer, may subsequently be etched to expose the plurality of line structures in the second layer. The plurality of line structures in the second layer may be removed, leaving an etched third layer. The etched third layer may be used as a mask to etch the first layer to form a semiconductor structure in the first layer. In some respects, the methods may include steps for etching the substrate using the etched first layer. The methods may also provide annealing the etched substrate to form a corrugate substrate surface.
    Type: Application
    Filed: January 22, 2007
    Publication date: July 24, 2008
    Inventors: Shuji Ikeda, Jeff Wetzel, James Beach, Charles Stager, Michael Gotskowski, Andrew Collin Campbell