Patents by Inventor Michael Grieb

Michael Grieb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10608105
    Abstract: A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate encompasses: an n-doped epitaxial drift zone, a p?-doped epitaxial first layer disposed on the drift zone, a heavily n-doped second layer disposed on the first layer, and a terminal formed by p+ implantation, the first layer being in electrical contact with the terminal and being disposed laterally between the terminal and a trench, the trench being formed in the drift zone, in the first layer, and in the second layer. The substrate is characterized in that an implantation depth (P) of the p+ implantation is at least as great as a depth of the trench. The deep p+ implantation can separate adjacent trenches in such a way that a field can no longer attack a gate oxide because it is directed around the gate oxide.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: March 31, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Michael Grieb, Achim Trautmann, Ning Qu
  • Patent number: 10460931
    Abstract: A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode situated below the trenches and are bordered by a source terminal of the first doping type above the channel layer; a plurality of shielding areas of the second doping type, which are situated below the gate electrode. The shielding areas are guided below the trenches together in a interconnection of shielding areas, and several shielding areas are jointly guided to terminals for contacting the shielding areas.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: October 29, 2019
    Assignee: Robert Bosch GmbH
    Inventors: Christian Tobias Banzhaf, Martin Rambach, Michael Grieb, Thomas Jacke
  • Publication number: 20180374698
    Abstract: A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode situated below the trenches and are bordered by a source terminal of the first doping type above the channel layer; a plurality of shielding areas of the second doping type, which are situated below the gate electrode. The shielding areas are guided below the trenches together in a interconnection of shielding areas, and several shielding areas are jointly guided to terminals for contacting the shielding areas.
    Type: Application
    Filed: October 19, 2016
    Publication date: December 27, 2018
    Inventors: Christian Tobias Banzhaf, Martin Rambach, Michael Grieb, Thomas Jacke
  • Patent number: 10153363
    Abstract: A method for manufacturing a transistor having high electron mobility, encompassing a substrate having a heterostructure, in particular an AlGaN/GaN heterostructure, having the steps of: generation of a gate electrode by patterning a semiconductor layer that is applied onto the heterostructure, the semiconductor layer encompassing, in particular, polysilicon; application of a passivating layer onto the semiconductor layer; formation of drain regions and source regions by generation of first vertical openings that extend at least into the heterostructure; generation of ohmic contacts in the drain regions and in the source regions by partly filling the first vertical openings with a first metal at least to the height of the passivating layer; and application of a second metal layer onto the ohmic contacts, the second metal layer projecting beyond the passivating layer.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: December 11, 2018
    Assignee: ROBERT BOSCH GMBH
    Inventors: Michael Grieb, Simon Jauss, Stephan Schwaiger
  • Patent number: 10107154
    Abstract: A cam phaser (30, 130, 230) dynamically adjusts a rotational relationship of a camshaft (32) of an internal combustion engine with respect to an engine crankshaft operably connected with a phaser sprocket (42, 142, 242). The cam phaser (30, 130, 230) can include a planetary gear assembly having a ring gear (34, 134, 234) driven by the phaser sprocket (42, 142, 242), a planetary gear carrier (36, 136, 236) connected to the camshaft (32), a sun gear (38, 138, 238), and at least one rotatable planetary gear (40, 140, 240).
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: October 23, 2018
    Assignee: BorgWarner, Inc.
    Inventors: Christopher J. Pluta, Michael Marsh, Michael Grieb
  • Publication number: 20180182880
    Abstract: A method for manufacturing a transistor having high electron mobility, encompassing a substrate having a heterostructure, in particular an AlGaN/GaN heterostructure, having the steps of: generation of a gate electrode by patterning a semiconductor layer that is applied onto the heterostructure, the semiconductor layer encompassing, in particular, polysilicon; application of a passivating layer onto the semiconductor layer; formation of drain regions and source regions by generation of first vertical openings that extend at least into the heterostructure; generation of ohmic contacts in the drain regions and in the source regions by partly filling the first vertical openings with a first metal at least to the height of the passivating layer; and application of a second metal layer onto the ohmic contacts, the second metal layer projecting beyond the passivating layer.
    Type: Application
    Filed: April 27, 2016
    Publication date: June 28, 2018
    Inventors: Michael Grieb, Simon Jauss, Stephan Schwaiger
  • Patent number: 9761706
    Abstract: An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: September 12, 2017
    Assignee: Robert Bosch GmbH
    Inventors: Ning Qu, Thomas Jacke, Michael Grieb, Martin Rambach
  • Publication number: 20170145873
    Abstract: A cam phaser (30, 130, 230) dynamically adjusts a rotational relationship of a camshaft (32) of an internal combustion engine with respect to an engine crankshaft operably connected with a phaser sprocket (42, 142, 242). The cam phaser (30, 130, 230) can include a planetary gear assembly having a ring gear (34, 134, 234) driven by the phaser sprocket (42, 142, 242), a planetary gear carrier (36, 136, 236) connected to the camshaft (32), a sun gear (38, 138, 238), and at least one rotatable planetary gear (40, 140, 240).
    Type: Application
    Filed: May 29, 2015
    Publication date: May 25, 2017
    Inventors: Christopher J. PLUTA, Michael MARSH, Michael GRIEB
  • Publication number: 20160329424
    Abstract: An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.
    Type: Application
    Filed: November 21, 2014
    Publication date: November 10, 2016
    Inventors: Ning Qu, Thomas Jacke, Michael Grieb, Martin Rambach
  • Publication number: 20160118494
    Abstract: A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate encompasses: an n-doped epitaxial drift zone, a p?-doped epitaxial first layer disposed on the drift zone, a heavily n-doped second layer disposed on the first layer, and a terminal formed by p+ implantation, the first layer being in electrical contact with the terminal and being disposed laterally between the terminal and a trench, the trench being formed in the drift zone, in the first layer, and in the second layer. The substrate is characterized in that an implantation depth (P) of the p+ implantation is at least as great as a depth of the trench. The deep p+ implantation can separate adjacent trenches in such a way that a field can no longer attack a gate oxide because it is directed around the gate oxide.
    Type: Application
    Filed: March 11, 2014
    Publication date: April 28, 2016
    Inventors: Michael GRIEB, Achim TRAUTMANN, Ning QU
  • Publication number: 20150048431
    Abstract: A method for forming a contact on a semiconductor substrate includes: applying a metal to an exposed partial area of an outer side of the semiconductor substrate and/or of a layer applied to the semiconductor substrate, the partial area being surrounded by at least one edge region of an insulating layer, and the at least one edge region of the insulating layer being at least partially covered by the metal; heating the semiconductor substrate, whereby the metal which is applied to the exposed partial area reacts with at least one semiconductor material of the partial area to form a semiconductor-metal material as the end material or a further processing material of the at least one contact; and etching using an etching material having a higher etching rate for the metal than for the semiconductor-metal material.
    Type: Application
    Filed: January 29, 2013
    Publication date: February 19, 2015
    Applicant: ROBERT BOSCH GMBH
    Inventors: Thomas Suenner, Michael Grieb