Patents by Inventor Michael Grimshaw

Michael Grimshaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080299189
    Abstract: The present invention relates to a multiphase release oral pharmaceutical formulation having a dopamine agonist as an active ingredient. The multiphase composition comprises at least two different release components. The invention relates to controlled release pharmaceutical compositions of pramipexole or a pharmaceutically acceptable salt thereof for once-daily administration.
    Type: Application
    Filed: May 23, 2008
    Publication date: December 4, 2008
    Applicant: DRUGTECH CORPORATION
    Inventors: Jonathan David Bortz, Michael Grimshaw, David F. Erkoboni
  • Publication number: 20080139655
    Abstract: A pharmaceutical composition comprising levodopa is provided that, when administered in a unit dosage amount of levodopa of about 100 to about 500 mg at a dosage interval of about 6 to about 24 hours, exhibits a sufficiently long release period and a sufficiently long residence time in the upper gastrointestinal tract to provide a trough concentration of levodopa in plasma of the subject that is not lower than a minimum threshold concentration below which adverse motor effects are observed in the subject. A method for treating Parkinson's disease in a subject is also provided, comprising orally administering such a composition to the subject in a unit dosage amount of levodopa of about 50 to about 1000 mg at a dosage interval of about 3 to about 24 hours.
    Type: Application
    Filed: September 5, 2007
    Publication date: June 12, 2008
    Applicant: DrugTech Corporation
    Inventors: Jonathan Bortz, Michael Grimshaw, David F. Erkoboni, Michael F. Dickus
  • Publication number: 20070235839
    Abstract: A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of AlxGa1-xAs is provided, as well as the resultant device. In general, each thick AlxGa1-xAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlxGa1-xAszP1-z layer of approximately the same thickness and with the same concentrations of Al and Ga. The AlxGa1-xAszP1-z layer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.
    Type: Application
    Filed: October 7, 2005
    Publication date: October 11, 2007
    Applicant: nLight Photonics Corporation
    Inventors: Mark DeVito, Paul Crump, Jun Wang, Weimin Dong, Michael Grimshaw, Christopher Ebert
  • Publication number: 20070226956
    Abstract: A fiber placement machine includes a movable wrist with a fiber placement head at one end of the wrist. A roller system for delivering fibers to the fiber placement head includes a J-axis roller located spaced from the ends of the wrist, a K-axis roller at the end of the wrist that supports the head, and an A-axis roller at the opposite end of the wrist. The axis of the K-axis rollers swivel depending on the rotation of the head, and the A-axis rollers swivel as a function of the swiveling of the K-axis rollers. As the A-axis rollers swivel, at least one end of the A-axis roller is displaced toward the J-axis roller to maintain a constant path length for the fiber tows between the A-axis roller and the J-axis roller.
    Type: Application
    Filed: April 18, 2006
    Publication date: October 4, 2007
    Inventors: Jeffrey Causey, Michael Grimshaw, Robert Borgmann
  • Publication number: 20070053396
    Abstract: A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.
    Type: Application
    Filed: August 24, 2005
    Publication date: March 8, 2007
    Applicant: nLight Photonics Corporation
    Inventors: Mark DeVito, Paul Crump, Jun Wang, Weimin Dong, Michael Grimshaw
  • Publication number: 20060023763
    Abstract: A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the n-side and p-side of the laser structure are achieved, thereby increasing the electrical to optical conversion efficiency of the laser.
    Type: Application
    Filed: July 28, 2004
    Publication date: February 2, 2006
    Applicant: nLight Photonics Corporation
    Inventors: Jason Farmer, Mark DeVito, Zhe Huang, Paul Crump, Michael Grimshaw, Prabhuram Thiagarajan, Weimin Dong, Jun Wang
  • Publication number: 20030190355
    Abstract: The present invention is directed to compositions and methods for the enhancement of iron uptake or the treatment of iron deficiency by enhancing the rate and extent of dissolution in a subject in need thereof. The composition contains at least two iron-providing materials in a single dosage form wherein at least one of the iron-providing materials contains a modified release mechanism, matrix, or coating. The iron-providing materials included within the composition have different rates of release. Following administration to the animal, the iron-providing materials are released in the gastrointestinal tract over a period of up to 24 hours.
    Type: Application
    Filed: April 5, 2002
    Publication date: October 9, 2003
    Inventors: Marc S. Hermelin, Michael Grimshaw